SLPS571A May   2016  – August 2017 CSD18541F5

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Mechanical Data (Package|Pins)
  • YJK|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 60 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 48 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 10 µA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 μA 1.4 1.75 2.2 V
RDS(on) Drain-to-source on-resistance VGS = 4.5 V, IDS = 1 A 57 75
VGS = 10 V, IDS = 1 A 54 65
gfs Transconductance VDS = 6 V, IDS = 1 A 7.7 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 30 V,
ƒ = 1 MHz
598 777 pF
Coss Output capacitance 47 61 pF
Crss Reverse transfer capacitance 8.1 10.5 pF
RG Series gate resistance 1200 1600 Ω
Qg Gate charge total (10 V) VDS = 30 V, IDS = 1 A 11 14 nC
Qgd Gate charge gate-to-drain 1.6 nC
Qgs Gate charge gate-to-source 1.5 nC
Qg(th) Gate charge at Vth 0.8 nC
Qoss Output charge VDS = 30 V, VGS = 0 V 3.2 nC
td(on) Turnon delay time VDS = 30 V, VGS = 4.5 V,
IDS = 1 A, RG = 0 Ω
572 ns
tr Rise time 540 ns
td(off) Turnoff delay time 1076 ns
tf Fall time 496 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 1 A, VGS = 0 V 0.8 1 V

Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 85 °C/W
Junction-to-ambient thermal resistance(2) 245
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
Device mounted on FR4 material with minimum Cu mounting area.

Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)
CSD18541F5 D001_SLPS571.png
Figure 1. Transient Thermal Impedance
CSD18541F5 D002_SLPS571.gif
Figure 2. Saturation Characteristics
CSD18541F5 D003_SLPS571.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD18541F5 D004_SLPS571_r2.gif
ID = 1 A VDS = 30 V
Figure 4. Gate Charge
CSD18541F5 D006_SLPS571.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD18541F5 D008_SLPS571.gif
ID = 1 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD18541F5 D010_SLPS571.gif
Single pulse, typ RθJA = 245°C/W
Figure 10. Maximum Safe Operating Area (SOA)
CSD18541F5 D012_SLPS571.gif
Figure 12. Maximum Drain Current vs Temperature
CSD18541F5 D005_SLPS571.gif
Figure 5. Capacitance
CSD18541F5 D007_SLPS571.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD18541F5 D009_SLPS571.gif
Figure 9. Typical Diode Forward Voltage
CSD18541F5 D011_SLPS571.gif
Figure 11. Single Pulse Unclamped Inductive Switching