SLPS479B December   2013  – April 2024 CSD19503KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0V, ID = 250μA80V
IDSSDrain-to-Source Leakage CurrentVGS = 0V, VDS = 64V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250μA2.22.83.4V
RDS(on)Drain-to-Source On-ResistanceVGS = 6V, ID = 60A8.810.9mΩ
VGS = 10V, ID = 60A7.69.2mΩ
gfsTransconductanceVDS = 8V, ID = 60A110S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0V, VDS = 40V, ƒ = 1MHz21002730pF
CossOutput Capacitance555721pF
CrssReverse Transfer Capacitance8.511.1pF
RGSeries Gate Resistance1.22.4Ω
QgGate Charge Total (10V)VDS = 40V, ID = 60A2836nC
QgdGate Charge Gate-to-Drain5.4nC
QgsGate Charge Gate-to-Source9.8nC
Qg(th)Gate Charge at Vth6.1nC
QossOutput ChargeVDS = 40V, VGS = 0V71nC
td(on)Turn On Delay TimeVDS = 40V, VGS = 10V,
IDS = 60A, RG = 0Ω		7ns
trRise Time3ns
td(off)Turn Off Delay Time11ns
tfFall Time2ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 60A, VGS = 0V0.91.1V
QrrReverse Recovery ChargeVDS= 40V, IF = 60A,
di/dt = 300A/μs		119nC
trrReverse Recovery Time72ns