SLPS480C January   2014  – April 2024 CSD19505KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 80 V, 2.6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

GUID-C7E4D8DB-5D30-4D65-AB16-328BE04936D0-low.gif GUID-9AA8AEEF-1B57-498B-9FAC-52FBC5DAB6A9-low.png
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10V) 76 nC
Qgd Gate Charge Gate to Drain 11 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6V 2.9 mΩ
VGS = 10V 2.6 mΩ
VGS(th) Threshold Voltage 2.6 V
Ordering Information(1)
Device Package Media Qty Ship
CSD19505KCS TO-220 Plastic Package Tube 50 Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 150 A
Continuous Drain Current (Silicon limited), TC = 25°C 208
Continuous Drain Current (Silicon limited), TC = 100°C 147
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 300 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 101A, L = 0.1mH, RG = 25Ω		 510 mJ
(1) Max RθJC = 0.5°C/W, pulse duration ≤100μs, duty cycle ≤1%
GUID-1B969A6F-ACCE-4860-8DB1-D87404E6E304-low.png RDS(on) vs VGS
GUID-DA2CBA5F-0FF7-4988-A828-D500C805091A-low.png Gate Charge