SLPS481C December   2013  – May 2024 CSD19506KCS

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Receiving Notification of Documentation Updates
    3. 5.3 Support Resources
    4. 5.4 Trademarks
    5. 5.5 Electrostatic Discharge Caution
    6. 5.6 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 80V, 2.0mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19506KCS
CSD19506KCS
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10V) 120 nC
Qgd Gate Charge Gate to Drain 20 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 2.2 mΩ
VGS = 10V 2.0 mΩ
VGS(th) Threshold Voltage 2.5 V
Ordering Information
Device Package(1) Media Qty Ship
CSD19506KCS TO-220 Plastic Package Tube 50 Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absuloute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 150 A
Continuous Drain Current (Silicon limited), TC = 25°C 273
Continuous Drain Current (Silicon limited), TC = 100°C 193
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 129A, L = 0.1mH, RG = 25Ω		 832 mJ
(1) Max RθJC = 0.4°C/W, pulse duration ≤100μs, duty cycle ≤1%
CSD19506KCS RDS(on) vs VGSRDS(on) vs VGS
CSD19506KCS Gate ChargeGate Charge