SLPS481B December   2013  – October 2014 CSD19506KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • TO-220 Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Motor Control

3 Description

This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19506KCS FET_Pins.gif
CSD19506KCS TO220p2.png

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 80 V
Qg Gate Charge Total (10 V) 120 nC
Qgd Gate Charge Gate to Drain 20 nC
RDS(on) Drain-to-Source On Resistance VGS = 6 V 2.2 mΩ
VGS = 10 V 2.0 mΩ
VGS(th) Threshold Voltage 2.5 V

Ordering Information(1)

Device Package Media Qty Ship
CSD19506KCS TO-220 Plastic Package Tube 50 Tube
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 150 A
Continuous Drain Current (Silicon limited), TC = 25°C 273
Continuous Drain Current (Silicon limited), TC = 100°C 193
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25 Ω		 832 mJ
  1. Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD19506KCS graph07_SLPS481.png

Gate Charge

CSD19506KCS graph04_SLPS481.png