SLPS481B December   2013  – October 2014 CSD19506KCS

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KCS Package Dimensions

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KCS|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 80 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V
RDS(on) Drain-to-Source On-Resistance VGS = 6 V, ID = 100 A 2.2 2.8 mΩ
VGS = 10 V, ID = 100 A 2.0 2.3 mΩ
gfs Transconductance VDS = 8 V, ID = 100 A 297 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 9380 12200 pF
Coss Output Capacitance 2260 2940 pF
Crss Reverse Transfer Capacitance 42 55 pF
RG Series Gate Resistance 1.3 2.6 Ω
Qg Gate Charge Total (10 V) VDS = 40 V, ID = 100 A 120 156 nC
Qgd Gate Charge Gate to Drain 20 nC
Qgs Gate Charge Gate to Source 37 nC
Qg(th) Gate Charge at Vth 25 nC
Qoss Output Charge VDS = 40 V, VGS = 0 V 345 nC
td(on) Turn On Delay Time VDS = 40 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 19 ns
tr Rise Time 11 ns
td(off) Turn Off Delay Time 30 ns
tf Fall Time 10 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse Recovery Charge VDS= 40 V, IF = 100 A,
di/dt = 300 A/μs		 525 nC
trr Reverse Recovery Time 107 ns

5.2 Thermal Information(1)

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance 0.4 °C/W
RθJA Junction-to-Ambient Thermal Resistance 62
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD19506KCS graph01_SLPS481.png
Figure 1. Transient Thermal Impedance
CSD19506KCS graph02_SLPS481.png
Figure 2. Saturation Characteristics
CSD19506KCS graph03_SLPS481.png
Figure 3. Transfer Characteristics
CSD19506KCS graph04_SLPS481.png
Figure 4. Gate Charge
CSD19506KCS graph06_SLPS481.png
Figure 6. Threshold Voltage vs Temperature
CSD19506KCS graph08_SLPS481.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD19506KCS graph10_SLPS481B.png
Figure 10. Maximum Safe Operating Area
CSD19506KCS graph12F_SLPS481.png
Figure 12. Maximum Drain Current vs Temperature
CSD19506KCS graph05_SLPS481.png
Figure 5. Capacitance
CSD19506KCS graph07_SLPS481.png
Figure 7. On-State Resistance vs Gate-To-Source Voltage
CSD19506KCS graph09_SLPS481.png
Figure 9. Typical Diode Forward Voltage
CSD19506KCS graph11_SLPS481.png
Figure 11. Single Pulse Unclamped Inductive Switching