SLPS540B March   2015  – August 2016 CSD19536KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • KTT|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • D2PAK Plastic Package

2 Applications

  • Secondary Side Synchronous Rectifier
  • Hot Swap
  • Motor Control

3 Description

This 100-V, 2-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

SPACE

Pin Out
CSD19536KTT FET_Pins.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10 V) 118 nC
Qgd Gate Charge Gate-to-Drain 17 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6 V 2.2 mΩ
VGS = 10 V 2
VGS(th) Threshold Voltage 2.5 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD19536KTT 500 13-Inch Reel D2PAK Plastic Package Tape and Reel
CSD19536KTTT 50
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current
(Package Limited)		 200 A
Continuous Drain Current (Silicon Limited), TC = 25°C 272
Continuous Drain Current (Silicon Limited), TC = 100°C 192
IDM Pulsed Drain Current(1) 400 A
PD Power Dissipation 375 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 127 A, L = 0.1 mH, RG = 25 Ω		 806 mJ
  1. Max RθJC = 0.4°C/W, Pulse duration ≤ 100 µs, Duty cycle ≤ 1%.

.

RDS(on) vs VGS

CSD19536KTT D007_SLPS540.gif

Gate Charge

CSD19536KTT D004_SLPS540_FP.gif