SLPS540C March   2015  – May 2025 CSD19536KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Community Resources
    3. 5.3 Trademarks
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

3 Description

This 100V, 2mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19536KTT Pin OutPin Out
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 118 nC
Qgd Gate Charge Gate-to-Drain 17 nC
RDS(on) Drain-to-Source On-Resistance VGS = 6V 2.2 mΩ
VGS = 10V 2
VGS(th) Threshold Voltage 2.5 V
Device Information
DEVICE(1)QTYMEDIAPACKAGESHIP
CSD19536KTT50013-Inch ReelD2PAK Plastic PackageTape and Reel
CSD19536KTTT50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°CVALUEUNIT
VDSDrain-to-Source Voltage100V
VGSGate-to-Source Voltage±20V
IDContinuous Drain Current
(Package Limited)		200A
Continuous Drain Current (Silicon Limited), TC = 25°C272
Continuous Drain Current (Silicon Limited), TC = 100°C192
IDMPulsed Drain Current(1)400A
PDPower Dissipation375W
TJ,
Tstg		Operating Junction,
Storage Temperature		–55 to 175°C
EASAvalanche Energy, Single Pulse
ID = 127A, L = 0.1mH, RG = 25Ω		806mJ
(1) Max RθJC = 0.4°C/W, Pulse duration ≤ 100µs, Duty cycle ≤ 1%.
CSD19536KTT RDS(on) vs VGS RDS(on) vs VGS
CSD19536KTT Gate Charge Gate Charge