SLPS690B August 2017 – February 2022 CSD22205L
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
This –8-V, 8.2-mΩ, 1.2-mm × 1.2-mm Land Grid Array (LGA) NexFET™ device has been designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. The Land Grid Array (LGA) package is a silicon chip scale package with metal pads instead of solder balls.
RDS(on) vs VGS
RDS(on) vs VGS| TA = 25°C | VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V | |
| Qg | Gate Charge Total (–4.5 V) | 6.5 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 1.0 | nC | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V | 30 | mΩ |
| VGS = –1.8 V | 20 | |||
| VGS = –2.5 V | 11.5 | |||
| VGS = –4.5 V | 8.2 | |||
| VGS(th) | Threshold Voltage | –0.7 | V | |
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD22205L | 3000 | 7-Inch Reel | 1.20-mm × 1.20-mm Land Grid Array Package | Tape and Reel |
| CSD22205LT | 250 |
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | –8 | V |
| VGS | Gate-to-Source Voltage | –6 | V |
| ID | Continuous Drain Current(1) | –7.4 | A |
| IDM | Pulsed Drain Current(2) | –71 | A |
| PD | Power Dissipation(1) | 0.6 | W |
| TJ, Tstg | Operating Junction Temperature, Storage Temperature | –55 to 150 | °C |
Figure 3-1 Top View and Circuit Configuration