3 Description

This 29-mΩ, –12-V, P-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.

Figure 3-1 Typical Part Dimensions

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	–12		V
Q_g	Gate Charge Total (–4.5 V)	3.2		nC
Q_gd	Gate Charge Gate-to-Drain	0.48		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.5 V	64	mΩ
		V_GS = –1.8 V	49
		V_GS = –2.5 V	38
		V_GS = –4.5 V	29
V_GS(th)	Threshold Voltage	–0.65		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD23285F5	3000	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Leadless	Tape and Reel
CSD23285F5T	250	7-Inch Reel	Femto 1.53-mm × 0.77-mm SMD Leadless	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	–12	V
V_GS	Gate-to-Source Voltage	–6	V
I_D	Continuous Drain Current⁽¹⁾	–3.3	A
I_D	Continuous Drain Current⁽²⁾	–5.4	A
I_DM	Pulsed Drain Current⁽¹⁾⁽³⁾	–31	A
P_D	Power Dissipation⁽¹⁾	0.5	W
P_D	Power Dissipation⁽²⁾	1.4	W
V_(ESD)	Human-Body Model (HBM)	4000	V
V_(ESD)	Charged-Device Model (CDM)	2000	V
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 150	°C

(1) Min Cu, typical R_θJA = 245°C/W.

(2) Max Cu, typical R_θJA = 90°C/W.

(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Figure 3-2 Top View