SLPS510A July   2014  – August 2014 CSD25304W1015

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD25304W1015 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZC|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA –20 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –16 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = ±8 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA –0.55 –0.8 –1.15 V
RDS(on) Drain-to-Source On-Resistance VGS = –1.8 V, ID = –1.5 A 65 92 mΩ
VGS = –2.5 V, ID = –1.5 A 36 45.5 mΩ
VGS = –4.5 V, ID = –1.5 A 27 32.5 mΩ
gƒs Transconductance VDS = –10 V, ID = –1.5 A 12 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = –10 V, ƒ = 1 MHz 458 595 pF
COSS Output Capacitance 231 300 pF
CRSS Reverse Transfer Capacitance 12 15.6 pF
Qg Gate Charge Total (–4.5 V) VDS = –10 V, ID = –1.5 A 3.3 4.4 nC
Qgd Gate Charge Gate-to-Drain 0.5 nC
Qgs Gate Charge Gate-to-Source 0.7 nC
Qg(th) Gate Charge at Vth 0.4 nC
QOSS Output Charge VDS = –10 V, VGS = 0 V 3.7 nC
td(on) Turn On Delay Time VDS = –10 V, VGS = –4.5 V, ID = –1.5 A
RG = 20 Ω		 6 ns
tr Rise Time 4 ns
td(off) Turn Off Delay Time 24 ns
tƒ Fall Time 10 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = –1.5 A, VGS = 0 V –0.75 –1 V
Qrr Reverse Recovery Charge VDS= –10 V, IF = –1.5 A, di/dt = 200 A/μs 7.2 nC
trr Reverse Recovery Time VDS= –10 V, IF = –1.5 A, di/dt = 200 A/μs 11.6 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 165 °C/W
Junction-to-Ambient Thermal Resistance(2) 85
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
m0155-01_lps210.gif
 Typ RθJA = 85°C/W when mounted on
1 inch2 of 2 oz. Cu.
m0156-01_lps210.gif
 Typ RθJA = 165°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS510.png
Figure 1. Transient Thermal Impedance
graph02_SLPS510.png
Figure 2. Saturation Characteristics
graph04_SLPS510.png
ID = –1.5 A VDS = –10 V
Figure 4. Gate Charge
graph06_SLPS510.png
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
graph08_SLPS510.png
ID = –1.5 A
Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS510.png
Single Pulse, Max RθJA = 165°C/W
Figure 10. Maximum Safe Operating Area
graph03_SLPS510.png
VDS = –5 V
Figure 3. Transfer Characteristics
graph05_SLPS510.png
Figure 5. Capacitance
graph07p2_SLPS510.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
graph09_SLPS510.png
Figure 9. Typical Diode Forward Voltage
graph12_SLPS510.png
Figure 11. Maximum Drain Current vs Temperature