SLPS454B December   2013  – January 2016 CSD25402Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Low RDS(on)
  • Pb and Halogen Free
  • RoHS Compliant
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This –20-V, 7.7-mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

Top View
CSD25402Q3A p0100-01_lps211.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage –20 V
Qg Gate charge total (–4.5 V) 7.5 nC
Qgd Gate charge gate to drain 1.1 nC
RDS(on) Drain-to-source on resistance VGS = –1.8 V 74 mΩ
VGS = –2.5 V 13.3 mΩ
VGS = –4.5 V 7.7 mΩ
Vth Threshold voltage –0.9 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3 mm Plastic Package Tape and Reel
CSD25402Q3AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage –20 V
VGS Gate-to-source voltage +12 or –12 V
ID Continuous drain current, TC = 25°C –76 A
Continuous drain current (package limit) –35 A
Continuous drain current(1) –15 A
IDM Pulsed drain current(2) –148 A
PD Power dissipation(1) 2.8 W
Power dissipation, TC = 25°C 69
TJ Operating junction temperature –55 to 150 °C
Tstg Storage temperature –55 to 150 °C
  1. Typical RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4 PCB.
  2. Max RθJC = 2.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD25402Q3A D007_SLPS454.gif

Gate Charge

CSD25402Q3A D004_SLPS454_FP.gif