SLPS420E September   2013  – December 2017 CSD25481F4

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJC|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Features

  • Ultra-Low On Resistance
  • Ultra-Low Qg and Qgd
  • High Operating Drain Current
  • Ultra-Small Footprint (0402 Case Size)
    • 1 mm × 0.6 mm
  • Ultra-Low Profile
    • 0.35 mm Max Height
  • Integrated ESD Protection Diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and Halogen Free
  • RoHS Compliant

Applications

  • Optimized for Load Switch Applications
  • Optimized for General Purpose Switching Applications
  • Battery Applications
  • Handheld and Mobile Applications

Description

This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Typical Part Dimensions
CSD25481F4 top_image_SLPS447.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5 V) 913 pC
Qgd Gate Charge Gate-to-Drain 153 pC
RDS(on) Drain-to-Source
On-Resistance
VGS = –1.8 V 395
VGS = –2.5 V 145
VGS = –4.5 V 90
VGS(th) Threshold Voltage –0.95 V

Ordering Information(1)

Device Qty Media Package Ship
CSD25481F4 3000 7-Inch Reel Femto(0402)
1.0 mm × 0.6 mm
Land Grid Array (LGA)
Tape and Reel
CSD25481F4T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage –12 V
ID Continuous Drain Current(1) –2.5 A
IDM Pulsed Drain Current(2) –13.1 A
IG Continuous Gate Clamp Current –35 mA
Pulsed Gate Clamp Current(2) –350
PD Power Dissipation(1) 500 mW
V (ESD) Human Body Model (HBM) 4 kV
Charged Device Model (CDM) 2 kV
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
  1. Typical RθJA = 90°C/W on 1 inch2 (6.45 cm2), 2 oz.
    (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB.
  2. Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Top View
CSD25481F4 Top_View2.gif

Revision History

Changes from D Revision (October 2014) to E Revision

  • Changed the Pulsed Drain Current value From: –10 A To: –13.1 A in the Absolute Maximum Ratings table Go
  • Changed Note 1 From: Typical RθJA = 85°C/W To: Typical RθJA = 90°C/WGo
  • Changed Note 2 From: Pulse duration ≤ 300 μs, duty cycle ≤ 2% To: Pulse duration ≤ 100 μs, duty cycle ≤ 1% Go
  • Changed the typical RθJA values in the Thermal Information table Go
  • Updated Figure 1. Go
  • Updated Figure 10 with newly measured data. Go
  • Added Community Resources. Go
  • Updated all mechanical drawings, increased the size of the pads in the Recommended Stencil Pattern section. Go

Changes from C Revision (February 2014) to D Revision

  • Corrected timing VDS to read –10 V. Go

Changes from B Revision (February 2013) to C Revision

  • Corrected capacitance units to read pF in Figure 5. Go

Changes from A Revision (December 2013) to B Revision

  • Updated lead and halogen free in features. Go
  • Added IG parameter. Go
  • Lowered IDSS limit. Go
  • Lowered IGSS limit. Go

Changes from * Revision (September 2013) to A Revision

  • Took out jumbo reel info and added small reel info. Go
  • Removed UIS graph. Go