Home Power management MOSFETs

CSD25481F4

ACTIVE

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection

Product details

VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 105 Rds(on) at VGS=2.5 V (max) (mΩ) 175 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.913 QGD (typ) (nC) 0.153 QGS (typ) (nC) 0.24 ID - silicon limited at TC=25°C (A) 2.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
VDS (V) -20 VGS (V) -12 Type P-channel Configuration Single Rds(on) at VGS=4.5 V (max) (mΩ) 105 Rds(on) at VGS=2.5 V (max) (mΩ) 175 VGSTH typ (typ) (V) -0.95 QG (typ) (nC) 0.913 QGD (typ) (nC) 0.153 QGS (typ) (nC) 0.24 ID - silicon limited at TC=25°C (A) 2.5 Logic level Yes Rating Catalog Operating temperature range (°C) -55 to 150
PICOSTAR (YJC) 3 0.657225 mm² 1.035 x 0.635
  • Ultra-low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 Case Size)
    • 1 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm max height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant
  • Ultra-low on resistance
  • Ultra-low Qg and Qgd
  • High operating drain current
  • Ultra-small footprint (0402 Case Size)
    • 1 mm × 0.6 mm
  • Ultra-low profile
    • 0.36 mm max height
  • Integrated ESD protection diode
    • Rated >4 kV HBM
    • Rated >2 kV CDM
  • Lead and halogen free
  • RoHS compliant

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

.

.

This 90-mΩ, 20-V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

.

.

.

Download View video with transcript Video

Similar products you might be interested in

open-in-new Compare alternates
Pin-for-pin with same functionality to the compared device
CSD23382F4 ACTIVE -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection Alternate 12 V versus 20 V, lower resistance, higher leakage
CSD25483F4 ACTIVE -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 245 mOhm, gate ESD protection Higher resistance, lower 1 ku price
CSD25484F4 ACTIVE -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 109 mOhm, gate ESD protection 0.2-mm height versus standard 0.36-mm height. Similar resistance.

Technical documentation

star =Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 11
Top documentation Type Title Format options Date
* Data sheet CSD25481F4 20 V P-Channel FemtoFET MOSFET datasheet (Rev. F) PDF | HTML 07 Sep 2021
Application brief Estimating Leakage Currents of Power MOSFETs PDF | HTML 31 Oct 2025
Application note MOSFET Support and Training Tools (Rev. G) PDF | HTML 27 Oct 2025
Application note Semiconductor and IC Package Thermal Metrics (Rev. D) PDF | HTML 25 Mar 2024
Application note Using MOSFET Transient Thermal Impedance Curves In Your Design PDF | HTML 18 Dec 2023
Application note Solving Assembly Issues with Chip Scale Power MOSFETs PDF | HTML 14 Dec 2023
Application note Using MOSFET Safe Operating Area Curves in Your Design PDF | HTML 13 Mar 2023
Application brief Tips for Successfully Paralleling Power MOSFETs PDF | HTML 31 May 2022
Technical article What type of ESD protection does your MOSFET include? PDF | HTML 22 Jun 2020
More literature WCSP Handling Guide 07 Nov 2019
Design guide FemtoFET Surface Mount Guide (Rev. D) 07 Jul 2016

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

CSD1FPCHEVM-890 — FemtoFET P-ch Evaluation Module

This FemtoFET P-ch EVM includes six daughter cards, each card containing a different FemtoFET p-ch part number.  The daughter cards allow the engineer to easily connect and test these tiny devices.  The six FemtoFETs range from 12V to 20V Vds, and the size of the devices include F3 (...)

User guide: PDF
Not available on TI.com
Support software

LOAD-SWITCH-FET-LOSS-CALC Power Loss Calculation Tool for Load Switch

Quickly trade off size, cost and performance to select the optimal MOSFET based on application conditions.
Supported products & hardware

Supported products & hardware

Simulation model

CSD25481F4 TINA-TI Spice Model

SLPM238.ZIP (4 KB) - TINA-TI Spice Model
Simulation model

CSD25481F4 Unencrypted PSpice Model (Rev. C)

SLPM079C.ZIP (3 KB) - PSpice Model
Package Pins CAD symbols, footprints & 3D models
PICOSTAR (YJC) 3 Ultra Librarian

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
Information included:
  • Fab location
  • Assembly location

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos