SLPS665 March   2018 CSD86356Q5D

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
      1.      Device Images
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics – Q1 Control FET
    6. 5.6 Electrical Characteristics – Q2 Sync FET
    7. 5.7 Typical Power Block Device Characteristics
    8. 5.8 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
        1. 6.1.1.1 Comparison of RDS(ON) vs ZDS(ON)
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
      2. 6.2.2 Operating Conditions
        1. 6.2.2.1 Calculating Power Loss
        2. 6.2.2.2 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Recommended Schematic Overview
    2. 7.2 Recommended PCB Design Overview
      1. 7.2.1 Electrical Performance
      2. 7.2.2 Thermal Performance
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Q5D Package Dimensions
    2. 9.2 Pin Configuration
    3. 9.3 Land Pattern Recommendation
    4. 9.4 Stencil Recommendation

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.1 Absolute Maximum Ratings

TA  = 25°C (unless otherwise noted)(1)
MIN MAX UNIT
Voltage VIN to PGND –0.8 25 V
VSW to PGND 25
VSW to PGND (10 ns) 27
TG to TGR –8 10
BG to PGND –8 10
Pulsed current rating, IDM(2) 120 A
Power dissipation, PD 12 W
Avalanche energy, EAS Sync FET, ID = 88 A, L = 0.1 mH 387 mJ
Control FET, ID = 45 A, L = 0.1 mH 101
TJ and TSTG Operating junction and storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Pulse duration = 50 µS. Duty cycle = 0.01.