SLPS598E May   2017  – June 2024 CSD88584Q5DC

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 Recommended Operating Conditions
    3. 4.3 Power Block Performance
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Typical Power Block Device Characteristics
    7. 4.7 Typical Power Block MOSFET Characteristics
  6. 5Application and Implementation
    1. 5.1 Application Information
    2. 5.2 Brushless DC Motor With Trapezoidal Control
    3. 5.3 Power Loss Curves
    4. 5.4 Safe Operating Area (SOA) Curve
    5. 5.5 Normalized Power Loss Curves
    6. 5.6 Design Example – Regulate Current to Maintain Safe Operation
    7. 5.7 Design Example – Regulate Board and Case Temperature to Maintain Safe Operation
      1. 5.7.1 Operating Conditions
      2. 5.7.2 Calculating Power Loss
      3. 5.7.3 Calculating SOA Adjustments
  7. 6Layout
    1. 6.1 Layout Guidelines
      1. 6.1.1 Electrical Performance
      2. 6.1.2 Thermal Considerations
    2. 6.2 Layout Example
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.5 Electrical Characteristics

TJ = 25°C (unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-source voltageVGS = 0V, IDS = 250µA40V
IDSSDrain-to-source leakage currentVGS = 0V, VDS = 32V1µA
IGSSGate-to-source leakage currentVDS = 0V, VGS = 20V100nA
VGS(th)Gate-to-source threshold voltageVDS = VGS, IDS = 250µA1.21.72.3V
RDS(on)Drain-to-source on resistanceVGS = 4.5V, IDS = 30A1.01.5mΩ
VGS = 10V, IDS = 30A0.680.95
gfsTransconductanceVDS = 4V, IDS = 30A149S
DYNAMIC CHARACTERISTICS
CISSInput capacitanceVGS = 0V, VDS = 20V,
ƒ = 1MHz		954012400pF
COSSOutput capacitance9571240pF
CRSSReverse transfer capacitance474616pF
RGSeries gate resistance1.02.0Ω
QgGate charge total (4.5 V)VDS = 20V,
IDS = 30A		6888nC
QgGate charge total (10 V)137178nC
QgdGate charge gate-to-drain26nC
QgsGate charge gate-to-source24nC
Qg(th)Gate charge at Vth16nC
QOSSOutput chargeVDS = 20V, VGS = 0V42nC
td(on)Turnon delay timeVDS = 20V, VGS = 10V,
IDS = 30A, RG = 0Ω		11ns
trRise time24ns
td(off)Turnoff delay time53ns
tfFall time17ns
DIODE CHARACTERISTICS
VSDDiode forward voltageIDS = 30A, VGS = 0V0.751.0V
QrrReverse recovery chargeVDS = 20V, IF = 30A,
di/dt = 300A/µs		34nC
trrReverse recovery time24ns
CSD88584Q5DC
Max RθJA = 50°C/W when mounted on 1in2 (6.45cm2) of 2oz (0.071mm) thick Cu.
CSD88584Q5DC
Max RθJA = 125°C/W when mounted on minimum pad area of 2oz (0.071mm) thick Cu.