SLPS670 June   2017 CSD95480RWJ

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Pin Configuration and Functions
  6. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
  7. 7Application Schematic
  8. 8Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Community Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  9. 9Mechanical, Packaging, and Orderable Information
    1. 9.1 Mechanical Drawing
    2. 9.2 Recommended PCB Land Pattern
    3. 9.3 Recommended Stencil Opening

Package Options

Mechanical Data (Package|Pins)
  • RWJ|41
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

TA = 25°C (unless otherwise stated)(1)
MIN MAX UNIT
VIN to PGND –0.3 20 V
VIN to VSW –0.3 20 V
VIN to VSW (10 ns) 23 V
VSW to PGND –0.3 20 V
VSW to PGND (10 ns) –7 23 V
VDD to PGND –0.3 7 V
PVDD to PGND –0.3 7 V
EN/FCCM, TAO/FLT, LSET to PGND –0.3 VDD + 0.3 V
IOUT, VOS, PWM to PGND –0.3 7 V
REFIN –0.3 3.6 V
BOOT to BOOTR(2) –0.3 VDD + 0.3 V
BOOT to PGND –0.3 30 V
TJ Operating junction temperature –55 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Should not exceed 7 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM) ±2000 V
Charged-device model (CDM) ±500

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise stated)
MIN MAX UNIT
VDD Driver supply voltage 4.5 5.5 V
PVDD Gate drive voltage 4.5 5.5 V
VIN Input supply voltage(1) 4.5 16 V
VOUT Output voltage 5.5 V
PWM to PGND VDD + 0.3 V
IOUT Continuous output current VIN = 12 V, VDD = 5 V, PVDD = 5 V, VOUT = 1.2 V,
ƒSW = 500 kHz(2)		 70 A
IOUT-PK Peak output current(3) 90 A
ƒSW Switching frequency CBST = 0.1 µF (min), VOUT = 2.5 V (max) 1250 kHz
On-time duty cycle ƒSW = 1 MHz 85%
Minimum PWM on-time 20 ns
Operating junction temperature –40 125 °C
(1) Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
(2) Measurement made with six 10-µF (TDK C3216X7R1C106KT or equivalent) ceramic capacitors across VIN to PGND pins.
(3) System conditions as defined in Note 2. Peak output current is applied for tp = 50 µs.

6.4 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
θJC Thermal resistance, junction-to-case (top of package) 7.4 °C/W
θJB Thermal resistance, junction-to-board(1) 2.2 °C/W
ΨJT Junction-to-top characterization parameter 0.9 °C/W
(1) θJB is determined with the device mounted on a 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm) thick FR4 board based on hottest board temperature within 1 mm of the package.