DLPS153 Data sheet

DLPS153 October 2023 DLP651LE

PRODUCTION DATA

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Mechanical Data (Package|Pins)

FYM|149

Thermal pad, mechanical data (Package|Pins)

Orderable Information

6.4 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied when operating the device above or below these limits.

		MIN	NOM	MAX	UNIT
VOLTAGE SUPPLY
V_CC	Supply voltage for LVCMOS core logic⁽¹⁾	3.0	3.3	3.6	V
V_CCI	Supply voltage for LVDS Interface⁽¹⁾	3.0	3.3	3.6	V
V_OFFSET	Micromirror Electrode and HVCMOS voltage⁽¹⁾⁽²⁾	8.25	8.5	8.75	V
V_MBRST	Micromirror Bias / Reset Voltage⁽¹⁾	–27		26.5	V
\|V_CC – V_CCI\|	Supply voltage delta (absolute value)⁽³⁾		0	0.3	V
LVCMOS INTERFACE
V_IH	Input High Voltage	1.7	2.5	V_CC + 0.3	V
V_IL	Input Low Voltage	–0.3		0.7	V
I_OH	High Level Output Current			–20	mA
I_OL	Low Level Output Current			15	mA
t_PWRDNZ	PWRDNZ pulse width⁽⁴⁾	10			ns
SCP INTERFACE
ƒ_SCPCLK	SCP clock frequency⁽⁵⁾	50		500	kHz
t_{SCP_PD}	Propagation delay, clock to Q, from rising-edge of SCPCLK to valid SCPDO⁽⁶⁾	0		900	ns
t_{SCP_DS}	SCPDI clock setup time (before SCPCLK falling-edge)⁽⁶⁾	800			ns
t_{SCP_DH}	SCPDI hold time (after SCPCLK falling-edge)⁽⁶⁾	900			ns
t_{SCP_NEG_ENZ}	Time between falling-edge of SCPENZ and the rising-edge of SCPCLK⁽⁵⁾	1			us
_{SCP_POS_ENZ}	Time between falling-edge of SCPCLK and the rising-edge of SCPENZ	1			us
t_{SCP_OUT_EN}	Time required for SCP output buffer to recover after SCPENZ (from tristate)			192/ƒ_DCLK	s
t_{SCP_PW_ENZ}	SCPENZ inactive pulse width (high level)	1			1/ƒ_scpclk
t_r	Rise time (20% to 80%)			200	ns
t_f	Fall time (80% to 20%)			200	ns
LVDS INTERFACE
ƒ_CLOCK	Clock frequency for LVDS interface (all channels), DCLK⁽⁷⁾		320	330	MHz
\|V_ID\|	Input differential voltage (absolute value)⁽⁸⁾	100	400	600	mV
V_CM	Common mode voltage⁽⁸⁾		1200		mV
V_LVDS	LVDS voltage⁽⁸⁾	0		2000	mV
t_{LVDS_RSTZ}	Time required for LVDS receivers to recover from PWRDNZ			10	ns
Z_IN	Internal differential termination resistance	95		105	Ω
Z_LINE	Line differential impedance (PWB/trace)	90	100	110	Ω
ENVIRONMENTAL
T_ARRAY	Array temperature, long-term operational⁽⁹⁾⁽¹⁰⁾⁽¹¹⁾	10		40 to 70⁽¹²⁾	°C
T_ARRAY	Array temperature, short-term operational⁽¹⁰⁾⁽¹³⁾	0		10	°C
T_{DP -AVG}	Average dew point average temperature (non-condensing)⁽¹⁴⁾			28	°C
T_DP-ELR	Elevated dew point temperature range (non-condensing)⁽¹⁵⁾	28		36	°C
CT_ELR	Cumulative time in elevated dew point temperature range			24	Months
Q_AP-ILL	Window aperture illumination overfill ⁽¹⁶⁾			17	W/cm²
SOLID STATE ILLUMINATION
ILL_UV	Illumination power at wavelengths < 410 nm⁽⁹⁾ ⁽¹⁸⁾			10	mW/cm²
ILL_VIS	Illumination power at wavelengths ≥ 410 nm and ≤800 nm ⁽¹⁷⁾⁽¹⁸⁾			33.5	W/cm²
ILL_IR	Illumination power at wavelengths > 800 nm ⁽¹⁸⁾			10	mW/cm²
ILL_BLU	Illumination power at wavelengths ≥ 410 nm and ≤ 475 nm ⁽¹⁷⁾⁽¹⁸⁾			10.6	W/cm²
ILL_BLU1	Illumination power at wavelengths ≥ 410 nm and ≤ 440 nm ⁽¹⁷⁾⁽¹⁸⁾			1.7	W/cm²
LAMP ILLUMINATION
ILL_UV	Illumination power at wavelengths < 395 nm⁽⁹⁾ ⁽¹⁸⁾			2	mW/cm²
ILL_VIS	Illumination power at wavelengths ≥ 395 nm and ≤ 800 nm ⁽¹⁷⁾⁽¹⁸⁾			23.5	W/cm²
ILL_IR	Illumination power at wavelengths > 800 nm ⁽¹⁸⁾			10	mW/cm²

(1) All voltages are referenced to common ground V_SS. V_BIAS, V_CC, V_CCI, V_OFFSET, and V_RESET power supplies are all required for proper DMD operation. V_SS must also be connected.

(2) V_OFFSET supply transients must fall within specified max voltages.

(3) To prevent excess current, the supply voltage delta |V_CCI – V_CC| must be less than the specified limit. See Section 10 and Figure 10-1.

(4) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tristates the SCPDO output pin.

(5) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.

(6) See Figure 6-3.

(7) See LVDS Timing Requirements in Section 6.7 and Figure 6-7.

(8) See Figure 6-6 LVDS Waveform Requirements.

(9) Simultaneous exposure of the DMD to the maximum Section 6.4 for temperature and UV illumination will reduce device lifetime.

(10) The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1 (TP1) shown in Figure 7-1 and the package thermal resistance using Section 7.5.

(11) Long-term is defined as the usable life of the device.

(12) Per Figure 6-1, the maximum operational array temperature should be derated based on the micromirror landed duty cycle that the DMD experiences in the end application. See Section 7.8 for a definition of micromirror landed duty cycle.

(13) Array temperatures beyond those specified as long-term are recommended for short-term conditions only (power-up). Short-term is defined as cumulative time over the usable life of the device and is less than 500 hours.

(14) The average over time (including storage and operating) that the device is not in the "elevated dew point temperature range."

(15) Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total cumulative time of CT_ELR.

(16) Light illuminating the critical area on the window aperture shown in Figure 6-2 should be limited to a maximum of Q_AP-ILL.

(17) The maximum allowable optical power incident on the DMD is limited by the maximum optical power density for each wavelength range specified and the micromirror array temperature (T_ARRAY).

(18) To calculate, see Micromirror Power Density Calculation.

Figure 6-1 Maximum Recommended Array Temperature—Derating Curve

Figure 6-2 Illumination Overfill Diagram—Critical Area