SLVSC79D June   2014  – November 2020 DRV8801A-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Dissipation Ratings
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Power Supervisor
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 MODE 1
        2. 7.3.2.2 MODE 2
      3. 7.3.3 Fast Decay with Synchronous Rectification
      4. 7.3.4 Slow Decay with Synchronous Rectification (Brake Mode)
      5. 7.3.5 Charge Pump
      6. 7.3.6 SENSE
      7. 7.3.7 VPROPI
        1. 7.3.7.1 Connecting VPROPI Output to ADC
      8. 7.3.8 Protection Circuits
        1. 7.3.8.1 VBB Undervoltage Lockout (UVLO)
        2. 7.3.8.2 Overcurrent Protection (OCP)
        3. 7.3.8.3 Overtemperature Warning (OTW)
        4. 7.3.8.4 Overtemperature Shutdown (OTS)
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Drive Current
        2. 8.2.2.2
        3. 8.2.2.3 Slow-Decay SR (Brake Mode)
      3. 8.2.3 Thermal Considerations
        1. 8.2.3.1 Junction-to-Ambiant Thermal Impedance (ƟJA)
      4. 8.2.4 Pulse-Width Modulating
        1. 8.2.4.1 Pulse-Width Modulating ENABLE
        2. 8.2.4.2 Pulse-Width Modulating PHASE
      5. 8.2.5 Application Curves
    3. 8.3 Parallel Configuration
      1. 8.3.1 Parallel Connections
      2. 8.3.2 Non – Parallel Connections
      3. 8.3.3 Wiring nFAULT as Wired OR
      4. 8.3.4 Electrical Considerations
        1. 8.3.4.1 Device Spacing
        2. 8.3.4.2 Recirculation Current Handling
        3. 8.3.4.3 Sense Resistor Selection
        4. 8.3.4.4 Maximum System Current
  9. Power Supply Recommendations
    1. 9.1 Bulk Capacitance
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, And Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

TA = 25°C, over recommended operating conditions (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
POWER SUPPLIES (VBB)
VBBVBB operating supply voltage6.536V
IBBVBB operating supply currentƒPWM < 50 kHz6mA
Charge pump on, Outputs disabled3.2
IBB(Q)VBB sleep-mode supply currentnSLEEP = 0, TJ = 25°C10μA
CONTROL INPUTS (PHASE, ENABLE, MODE1, MODE2, nSLEEP)
VILInput logic low voltagePHASE, ENABLE
MODE1, MODE2
0.8V
VIHInput logic high voltage2
IILInput logic low currentPHASE,
MODE1, MODE2
VI = 0.8 V–20≤ –220µA
IIHInput logic high currentVI = 2 V< 120
IILInput logic low currentENABLEVI = 0.8 V1640μA
IIHInput logic high currentVI = 2 V40100
VILInput logic low voltagenSLEEP0.8V
VIHInput logic high voltage2.7
IILInput logic low currentVI = 0.8 V< 110μA
IIHInput logic high currentVI = 2 V2750
CONTROL OUTPUTS (nFAULT)
VOLOutput logic low voltageIO = 1 mA0.4V
DMOS DRIVERS (OUTA, OUTB, SENSE, VPROPI)
rDS(on)Output ON resistanceSource driver, IO = –2.8 A, TJ = 25°C , VBB = 6.5 to 36 V0.48
Source driver, IO = –2.8 A, TJ = 125°C, VBB = 8 to 36 V0.740.85
Source driver, IO = –2.8 A, TJ = 125°C, VBB = 6.5 to 8 V0.740.9
Sink driver, IO = 2.8 A, TJ = 25°C, VBB = 6.5 to 36 V0.35
Sink driver, IO = 2.8 A, TJ = 125°C, VBB = 8 to 36 V0.520.7
Sink driver, IO = 2.8 A, TJ = 125°C, VBB = 6.5 to 8 V0.520.75
V(TRIP)SENSE trip voltageR(SENSE) between SENSE and GND450500550mV
VfBody diode forward voltageSource diode, If = –2.8 A1.4V
Sink diode, If = 2.8 A1.4
tpdPropagation delay timeInput edge to source or sink ON600ns
Input edge to source or sink OFF100
tCODCrossover delay500ns
GD(a)Differential amplifier gainVBB = 8 to 36 V; SENSE = 0.1 to 0.4 V4.855.2V/V
VBB = 6.5 to 8 V; SENSE = 0.1 to 0.3 V4.85.2V/V
PROTECTION CIRCUITS
VUVUVLO thresholdVBB increasing5.56.4V
VBB decreasing5.7
UVLO hysteresis500850mV
I(OCP)Overcurrent protection trip levelVBB = 8 to 36 V3A
VBB = 6.5 to 8 V2.8A
t(DEG)Overcurrent deglitch time3µs
t(OCP)Overcurrent retry time0.51.23ms
T(OTW)Thermal warning temperatureDie temperature TJ160°C
Thys(OTW)Thermal warning hysteresisDie temperature TJ15°C
T(OTS)Thermal shutdown temperatureDie temperature TJ175°C
Thys(OTS)Thermal shutdown hysteresisDie temperature TJ15°C