SLVSA11G October   2009  –  November 2015 DRV8828

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 PWM Motor Drivers
      2. 7.3.2 Bridge Control
      3. 7.3.3 Current Regulation
      4. 7.3.4 Decay Mode
      5. 7.3.5 Blanking Time
      6. 7.3.6 Protection Circuits
        1. 7.3.6.1 Overcurrent Protection (OCP)
        2. 7.3.6.2 Thermal Shutdown (TSD)
        3. 7.3.6.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 nRESET and nSLEEP Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Current Regulation
        2. 8.2.2.2 Sense Resistor
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance Sizing
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
    4. 10.4 Heatsinking
      1. 10.4.1 Thermal Information
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)(2)
MIN MAX UNIT
VM Power supply voltage –0.3 47 V
Digital pin voltage –0.5 7 V
VREF Input voltage –0.3 4 V
ISENSE pin voltage –0.8 0.8(4) V
Peak motor drive output current, t < 1 μS Internally limited A
Continuous motor drive output current(3) 0 3 A
Continuous total power dissipation See Thermal Information
TJ Operating virtual junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground pin.
(3) Power dissipation and thermal limits must be observed.
(4) Transients of +/- 1V for less than 25 ns are acceptable.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VM Motor power supply voltage range(1) 8.2 45 V
VREF VREF input voltage(2) 1 3.5 V
IV3P3 V3P3OUT load current 1 mA
(1) All VM pins must be connected to the same supply voltage.
(2) Operational at VREF between 0 V and 1 V, but accuracy is degraded.

6.4 Thermal Information

THERMAL METRIC(1) DRV8828 UNIT
PWP (HTSSOP)
28 PINS
RθJA Junction-to-ambient thermal resistance 38.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 23.3 °C/W
RθJB Junction-to-board thermal resistance 21.2 °C/W
ψJT Junction-to-top characterization parameter 0.8 °C/W
ψJB Junction-to-board characterization parameter 20.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLIES
IVM VM operating supply current VM = 24 V, fPWM < 50 kHz 5 8 mA
IVMQ VM sleep mode supply current VM = 24 V 10 20 μA
VUVLO VM undervoltage lockout voltage VM rising 7.8 8.2 V
V3P3OUT REGULATOR
V3P3 V3P3OUT voltage IOUT = 0 to 1 mA, VM = 24 V, TJ = 25°C 3.18 3.30 3.42 V
IOUT = 0 to 1 mA 3.10 3.30 3.50 V
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.6 0.7 V
VIH Input high voltage 2 5.25 V
VHYS Input hysteresis 0.45 V
IIL Input low current VIN = 0 –20 20 μA
IIH Input high current VIN = 3.3 V 100 μA
RPD Internal pulldown resistance ENBL, PHASE, I0, I1, I2, I3, I4, nRESET 100 kΩ
nSLEEP 1 MΩ
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VOL Output low voltage IO = 5 mA 0.5 V
IOH Output high leakage current VO = 3.3 V 1 μA
DECAY INPUT
VIL Input low threshold voltage For slow decay mode 0.8 V
VIH Input high threshold voltage For fast decay mode 2 V
IIN Input current –100 100 µA
RPU Internal pullup resistance 130 kΩ
RPD Internal pulldown resistance 80 kΩ
H-BRIDGE FETS
RDS(ON) HS FET on resistance VM = 24 V, I O = 1 A, TJ = 25°C 0.32 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.39 0.45 Ω
RDS(ON) LS FET on resistance VM = 24 V, IO = 1 A, TJ = 25°C 0.33 Ω
VM = 24 V, IO = 1 A, TJ = 85°C 0.39 0.45 Ω
IOFF Off-state leakage current –40 40 μA
MOTOR DRIVER
fPWM PWM frequency 50 kHz
tBLANK Current sense blanking time 3.75 μs
tR Rise time VM = 24 V 100 360 ns
tF Fall time VM = 24 V 80 250 ns
tDEAD Dead time 400 ns
tDEG Input deglitch time 1.3 2.9 µs
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 3.6 10 A
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C
CURRENT CONTROL
IREF VREF input current VREF = 3.3 V –3 3 μA
VTRIP ISENSE trip voltage VREF = 3.3 V, 100% current setting 635 660 685 mV
ΔITRIP Current trip accuracy
(relative to programmed value)		 VREF = 3.3V , 5% current setting –25% 25%
VREF = 3.3V , 10% - 34% current setting –15% 15%
VREF = 3.3 V, 38% - 67% current setting –10% 10%
VREF = 3.3 V, 71% - 100% current setting –5% 5%
AISENSE Current sense amplifier gain Reference only 5 V/V

6.6 Typical Characteristics

DRV8828 C001_SLVSCH0.png
Figure 1. IVMx vs V(VMx)
DRV8828 C001_SLVSA11.png
Figure 3. RDS(ON) vs V(VMx)
DRV8828 C002_SLVSCH0.png
Figure 2. IVMxQ vs V(VMx)
DRV8828 C002_SLVSA11.png
Figure 4. RDS(ON) vs Temperature