SLVSH15A November   2023  – June 2025 ESD852 , ESD862

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics – ESD852
    8. 5.8 Typical Characteristics – ESD862
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBZ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.6 Electrical Characteristics

over TA = 25°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSDEVICEMINTYPMAXUNIT
VRWMReverse stand-off voltage–3636V
VBRFForward breakdown voltage(1)(2)IIO = 10mA, IO to GND37.84044.2V
VBRRReverse breakdown voltage (1)(2)IIO = -10mA, IO to GND-44.2-40-37.8V
VCLAMPClamping voltage(3)IPP = 1A, tp = 8/20 µs, IO to GNDESD8524350V
IPP = 4. A, tp = 8/20µs, from IO to GND6166V
IPP = 1A, tp = 8/20µs, from IO to GNDESD86247V
IPP = 3.1A, tp = 8/20µs, from IO to GND61V
VCLAMPClamping voltage(4)IPP = 16A, TLP, IO to GND or GND to IOESD85263V
ESD86264V
ILEAKLeakage currentVIO = ±36V, IO to GND550nA
RDYNDynamic resistance(4)IO to GND and GND to IOESD8520.49Ω
ESD8620.49Ω
CLLine capacitance(1)VIO = 0V, f = 1MHz, Vpp = 30mVESD8522.83.5pF
ESD8622.62.9pF
(1) Measured from IO to GND on each channel.
(2) VBRF and VBRR are defined as the voltage when ± 10mA is applied in the positive or negative direction respectively.
(3) Device stressed with 8/20μs exponential decay waveform according to IEC 61000-4-5.
(4) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008