SBOS508A December   2009  – December 2015 INA129-EP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Noise Performance
      2. 7.4.2 Input Common-Mode Range
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Setting the Gain
        2. 8.2.2.2 Dynamic Performance
        3. 8.2.2.3 Offset Trimming
        4. 8.2.2.4 Input Bias Current Return Path
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Low Voltage Operation
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5 Pin Configuration and Functions

D Package
8-Pin SOIC
Top View
INA129-EP po_bos508.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
Ref 5 I Output voltage reference
RG 1, 8 O Gain resistor connection
V+ 7 Power Positive power supply voltage from 2.25 V to 18 V
V– 4 Power Negative power supply voltage from –2.25 V to –18 V
V+IN 3 I Non-inverting input voltage
V–IN 2 I Inverting input voltage
VO 6 O Output voltage

Bare Die Information

DIE THICKNESS BACKSIDE FINISH BACKSIDE POTENTIAL BOND PAD
METALLIZATION COMPOSITION
15 mils Silicon with backgrind GND Al-Si-Cu (0.5%)
INA129-EP bondpad_bas446a.gif

Bond Pad Coordinates in Mils

DESCRIPTION PAD NUMBER a b c d
NC 1 -57.4 -31.1 -53.3 -27
V-IN 2 -9.85 -31.4 -5.75 -27.3
V+IN 3 25.05 -31.4 29.15 -27.3
V- 4 56.2 -34.3 60.3 -30.2
Ref 5 53.75 -17.6 57.85 -11
VO 6 50.35 27.8 56.95 31.9
V+ 7 7.75 30.2 11.85 34.3
NC 8 -57.4 28.4 -53.3 32.5
RG(1) 9 -57.4 13.4 -53.3 20
RG(1) 10 -57.5 2.7 -53.4 9.3
RG(1) 11 -57.5 -7.9 -53.4 -1.3
RG(1) 12 -57.4 -18.6 -53.3 -12
(1) Pads 9 and 10 must both be bonded to a common point and correspond to package pin 8. Pads 11 and 12 must both be bonded to a common point and correspond to package pin 1.
INA129-EP die_bos501.gif