SBOSA78 March   2026 INA1H182-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Setting the Gain
        1. 6.3.1.1 Gain Drift
      2. 6.3.2 EMI Rejection
      3. 6.3.3 Input Common-Mode Range
      4. 6.3.4 Input Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Reference Pin
      2. 7.1.2 Input Bias Current Return Path
    2. 7.2 Typical Applications
      1. 7.2.1 Resistor Temperature Detector Signal Conditioning Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Procedure
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.2.1.3 Application Curves

Figure 7-6 and Figure 7-7 show typical characteristic curves for the circuit.

INA1H182-SEP RTD Measurement: Circuit Simulation, INA Input Voltage

RTD PT-100, IRTD = 1mA

Figure 7-6 RTD Measurement: Circuit Simulation, INA Input Voltage
INA1H182-SEP RTD Measurement: Circuit Simulation, INA Output Voltage
VS+ = 5V, VS– = GND, RG = 4.65kΩ, INAREF = 2.5V
Figure 7-7 RTD Measurement: Circuit Simulation, INA Output Voltage