SBOS374E November   2006  – September 2017 INA200 , INA201 , INA202

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Current-Shunt Monitor
    6. 6.6 Electrical Characteristics: Comparator
    7. 6.7 Electrical Characteristics: General
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Basic Connections
      2. 7.3.2 Selecting RS
      3. 7.3.3 Comparator
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input Filtering
      2. 7.4.2 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
        1. 7.4.2.1 Normal Case 1: VSENSE ≥ 20 mv, VCM ≥ VS
        2. 7.4.2.2 Normal Case 2: VSENSE ≥ 20 mv, VCM < VS
        3. 7.4.2.3 Low VSENSE Case 1: VSENSE < 20 mV, -16 V ≤ VCM < 0 and Low VSENSE Case 3: VSENSE < 20 mV, VS < VCM ≤ 80 V
        4. 7.4.2.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
      3. 7.4.3 Transient Protection
      4. 7.4.4 Output Voltage Range
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
    1. 9.1 Output vs Supply Ramp Considerations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, Vs 2.7 18 V
Current-shunt monitor analog inputs, VIN+, VIN– Differential (VIN+) – (VIN–) –18 18 V
Common-mode(2) –16 80 V
Comparator analog input and reset pins(2) GND – 0.3 (Vs) + 0.3 V
Analog output, OUT(2) GND – 0.3 (Vs) + 0.3 V
Comparator output, OUT(2) GND – 0.3 18 V
Input current into any pin(2) 5 mA
Operating temperature –55 150 °C
Junction temperature –65 150 °C
Storage temperature, Tstg –65 150 °C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
This voltage may exceed the ratings shown if the current at that pin is limited to 5 mA.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±4000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCM Common-mode input voltage –16 12 80 V
VS Operating supply voltage 2.7 12 18 V
TA Operating free-air temperature –40 25 125 °C

Thermal Information

THERMAL METRIC(1) INA20x UNIT
D (SOIC) DGK (SOIC)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 110.5 162.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.4 37.7 °C/W
RθJB Junction-to-board thermal resistance 52.7 82.9 °C/W
ψJT Junction-to-top characterization parameter 7.8 1.3 °C/W
ψJB Junction-to-board characterization parameter 51.9 81.4 °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

Electrical Characteristics: Current-Shunt Monitor

at TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, RPULL-UP = 5.1 kΩ connected from CMPOUT to VS, and CMPIN = GND, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
VSENSE Full-scale sense input voltage VSENSE = VIN+  – VIN– 0.15 (VS  – 0.25) / Gain V
VCM Common-mode input range TA = –40°C to 125°C –16 80 V
CMR Common-mode rejection VIN+ = –16 V to 80 V 80 100 dB
VIN+ = 12 V to 80 V, TA = –40°C to 125°C 100 123 dB
VOS Offset voltage, RTI(1) TA = 25°C ±0.5 ±2.5 mV
TA = 25°C to 125°C ±3 mV
TA = –40°C to 25°C ±3.5 mV
dVOS/dT Offset voltage, RTI, vs temperature TMIN to TMAX, TA = –40°C to 125°C 5 μV/°C
PSR Offset voltage, RTI, vs power supply VOUT = 2 V, VIN+ = 18 V, 2.7 V, TA = –40°C to 125°C 2.5 100 μV/V
IB Input bias current, VIN– pin TA = –40°C to 125°C ±9 ±16 μA
OUTPUT (VSENSE  ≥ 20 mV)
G Gain INA200 20 V/V
INA201 50 V/V
INA202 100 V/V
Gain error VSENSE = 20 mV to 100 mV ±0.2% ±1%
VSENSE = 20 mV to 100 mV, TA = –40°C to 125°C ±2%
Total output error(2) VSENSE = 120 mV, VS = 16 V ±0.75% ±2.2%
VSENSE = 120 mV, VS = 16 V, TA = –40°C to 125°C ±3.5%
Nonlinearity error(3) VSENSE = 20 mV to 100 mV ±0.002%
RO Output impedance 1.5 Ω
Maximum capacitive load No sustained oscillation 10 nF
OUTPUT (VSENSE < 20 mV)(4)
Output INA200, INA201, INA202 –16 V ≤ VCM < 0 V 300 mV
INA200 0 V ≤ VCM ≤ VS, VS = 5 V 0.4 V
INA201 0 V ≤ VCM ≤ VS, VS = 5 V 1 V
INA202 0 V ≤ VCM ≤ VS, VS = 5 V 2 V
INA200, INA201, INA202 VS < VCM ≤ 80 V 300 mV
VOLTAGE OUTPUT(5)
Output swing to the positive rail VIN– = 11 V, VIN+ = 12 V, TA = –40°C to 125°C (Vs) – 0.15 (Vs) – 0.25 V
Output swing to GND(6) VIN– = 0 V, VIN+ = –0.5 V, TA = –40°C to 125°C (GND) + 0.004 (GND) + 0.05 V
FREQUENCY RESPONSE
BW Bandwidth INA200 CLOAD = 5 pF 500 kHz
INA201 CLOAD = 5 pF 300 kHz
INA202 CLOAD = 5 pF 200 kHz
Phase margin CLOAD < 10 nF 40 °C
SR Slew rate 1 V/μs
Settling time (1%) VSENSE = 10 mVPP to 100 mVPP,
CLOAD = 5 pF
2 μs
NOISE, RTI
Voltage noise density 40 nV/√Hz
Offset is extrapolated from measurements of the output at 20-mV and 100-mV VSENSE.
Total output error includes effects of gain error and VOS.
Linearity is best fit to a straight line.
For details on this region of operation, see Accuracy Variations section in Device Functional Modes.
See Figure 8.
Specified by design.

Electrical Characteristics: Comparator

at TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, and RPULL-UP = 5.1 kΩ connected from CMPOUT to VS, (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
Threshold TA = 25°C 590 608 620 mV
TA = –40°C to 125°C 586 625 mV
Hysteresis(1) TA = –40°C to 85°C –8 mV
INPUT BIAS CURRENT(2)
Input bias current, CMPin PIN 0.005 10 nA
Input bias current, CMPin PIN, vs temperature TA = –40°C to 125°C 15 nA
INPUT VOLTAGE RANGE
Input voltage range, CMPin PIN 0 V to VS – 1.5 V V
OUTPUT (OPEN-DRAIN)
Large-signal differential voltage gain CMP VOUT 1 V to 4 V,
RL ≥ 15 kΩ connected to 5 V
200 V/mV
ILKG High-level leakage current(3)(4) VID = 0.4 V, VOH = VS 0.0001 1 μA
VOL Low-level output voltage(3) VID = –0.6 V, IOL = 2.35 mA 220 300 mV
RESPONSE TIME
Response time(5) RL to 5 V, CL = 15 pF, 100-mV Input Step with 5-mV overdrive 1.3 μs
RESET
RESET threshold(6) 1.1 V
Logic input impedance 2
Minimum RESET pulse width 1.5 μs
RESET propagation delay 3 μs
Hysteresis refers to the threshold (the threshold specification applies to a rising edge of a noninverting input) of a falling edge on the noninverting input of the comparator; refer to Figure 1.
Specified by design.
VID refers to the differential voltage at the comparator inputs.
Open-drain output can be pulled to the range of 2.7 to 18 V, regardless of VS.
The comparator response time specified is the interval between the input step function and the instant when the output crosses 1.4 V.
The RESET input has an internal 2 MΩ (typical) pull-down. Leaving RESET open results in a LOW state, with transparent comparator operation.

Electrical Characteristics: General

at TA = 25°C, VS = 12 V, VCM = 12 V, VSENSE = 100 mV, RL = 10 kΩ to GND, RPULL-UP = 5.1 kΩ connected from CMPOUT to VS, and CMPIN = 1 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
VS Operating power supply TA = –40°C to 125°C 2.7 18 V
IQ Quiescent current VOUT = 2 V 1350 1800 μA
VSENSE = 0 mV, TA = –40°C to 125°C 1850 μA
Comparator power-on reset threshold(1) 1.5 V
TEMPERATURE
Specified temperature –40 125 °C
Operating temperature –55 150 °C
Storage temperature –65 150 °C
θJA Thermal resistance VSSOP-8 Surface-Mount 200 °C/W
SOIC-8 150 °C/W
The INA200, INA201, and INA202 are designed to power-up with the comparator in a defined reset state as long as RESET is open or grounded. The comparator is in reset as long as the power supply is below the voltage shown here. The comparator assumes a state based on the comparator input above this supply voltage. If RESET is high at power-up, the comparator output comes up high and requires a reset to assume a low state, if appropriate.
INA200 INA201 INA202 hysteresis_bos374.gif Figure 1. Typical Comparator Hysteresis

Typical Characteristics

at TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, (unless otherwise noted)
INA200 INA201 INA202 tc_g-frq_1k_bos374.gif
Figure 2. Gain vs Frequency
INA200 INA201 INA202 tc_g_plot_bos374.gif
Figure 4. Gain Plot
INA200 INA201 INA202 tc_err-vsense_bos374.gif
Figure 6. Output Error vs VSENSE
INA200 INA201 INA202 tc_pos_v-curr_bos374.gif
Figure 8. Positive Output Voltage Swing vs Output Current
INA200 INA201 INA202 tc_iq-vcm_bos374.gif
Figure 10. Quiescent Current vs Common-Mode Voltage
INA200 INA201 INA202 tc_step_20g_10-20_bos374.gif
Figure 12. Step Response
INA200 INA201 INA202 tc_step_20g_90-100_bos374.gif
Figure 14. Step Response
INA200 INA201 INA202 tc_step_50g_10-100_bos374.gif
Figure 16. Step Response
INA200 INA201 INA202 tc_step_100g_bos374.gif
Figure 18. Step Response
INA200 INA201 INA202 tc_comp_trip-vs_bos374.gif
Figure 20. Comparator Trip Point vs Supply Voltage
INA200 INA201 INA202 tc_comp-odrive_bos374.gif
Figure 22. Comparator Propagation Delay vs Overdrive Voltage
INA200 INA201 INA202 tc_comp_delay-tmp_bos374.gif
Figure 24. Comparator Propagation Delay vs Temperature
INA200 INA201 INA202 tc_g-frq_bos374.gif
Figure 3. Gain vs Frequency
INA200 INA201 INA202 tc_cmrr_psrr-frq_bos374.gif
Figure 5. Common-Mode and Power-Supply Rejection vs Frequency
INA200 INA201 INA202 tc_err-volt_bos374.gif
Figure 7. Output Error vs Common-Mode Voltage
INA200 INA201 INA202 tc_iq-vo_bos374.gif
Figure 9. Quiescent Current vs Output Voltage
INA200 INA201 INA202 tc_curr-vs_bos374.gif
Figure 11. Output Short-Circuit Current vs Supply Voltage
INA200 INA201 INA202 tc_step_20g_10-100_bos374.gif
Figure 13. Step Response
INA200 INA201 INA202 tc_step_50g_10-20_bos374.gif
Figure 15. Step Response
INA200 INA201 INA202 tc_step_50g_90-100_bos374.gif
Figure 17. Step Response
INA200 INA201 INA202 tc_comp-isink_bos374.gif
Figure 19. Comparator VOL vs ISINK
INA200 INA201 INA202 tc_comp_trip-tmp_bos374.gif
Figure 21. Comparator Trip Point vs Temperature
INA200 INA201 INA202 tc_comp_v-vs_bos374.gif
Figure 23. Comparator Reset Voltage vs Supply Voltage
INA200 INA201 INA202 tc_comp_prop_bos374.gif
Figure 25. Comparator Propagation Delay