SLLSET8A March   2016  – August 2016 ISO7820LL , ISO7821LL

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  DC Electrical Characteristics
    10. 6.10 DC Supply Current Characteristics
    11. 6.11 Switching Characteristics
    12. 6.12 Insulation Characteristics Curves
    13. 6.13 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device I/O Schematics
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Electromagnetic Compatibility (EMC) Considerations
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 PCB Material
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCCx Supply voltage(2) VCC1, VCC2 –0.5 6 V
V Voltage on input, output, and enable pins OUTx, INx, ENx –0.5 VCCx + 0.5(3) V
IO Maximum current through OUTx pins –20 20 mA
TJ Junction temperature –55 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak voltage values.
(3) Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
VCC1, VCC2 Supply voltage 2.25 3.3 5.5 V
|VID| Magnitude of RX input differential voltage Driven with voltage sources on RX pins 100 600 mV
VIC RX input common-mode voltage VCC1, VCC2 ≥ 3 V 0.5 |VID| 2.4 – 0.5 |VID| V
VCC1, VCC2 < 3 V 0.5 |VID| VCCx – 0.6 – 0.5 |VID| V
RL TX far end differential termination 100 Ω
DR Signaling rate 0 100 Mbps
TA Ambient temperature –55 25 125 °C

6.4 Thermal Information

THERMAL METRIC(1) ISO7820LL
ISO7821LL		 UNIT
DW (SOIC) DWW (SOIC)
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 82 84.6 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 44.6 46.4 °C/W
RθJB Junction-to-board thermal resistance 46.6 55.3 °C/W
ψJT Junction-to-top characterization parameter 17.8 18.7 °C/W
ψJB Junction-to-board characterization parameter 46.1 54.5 °C/W
RθJC(bottom) Junction-to-case(bottom) thermal resistance — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Power Ratings

VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL = 5 pF, input a 50-MHz 50% duty-cycle square wave, EN1 = EN2 = 5.5 V,
RL = 100-Ω differential
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO7821LL
PD Maximum power dissipation (both sides) 156 mW
PD1 Maximum power dissipation (side 1) 78 mW
PD2 Maximum power dissipation (side 2) 78 mW
ISO7820LL
PD Maximum power dissipation (both sides) 152 mW
PD1 Maximum power dissipation (side 1) 36 mW
PD2 Maximum power dissipation (side 2) 116 mW

6.6 Insulation Specifications

over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS SPECIFICATION UNIT
DW DWW
GENERAL
CLR External clearance(1) Shortest terminal-to-terminal distance through air >8 >14.5 mm
CPG External creepage(1) Shortest terminal-to-terminal distance across the package surface >8 >14.5 mm
DTI Distance through the insulation Minimum internal gap (internal clearance) >21 >21 μm
CTI Tracking resistance (comparative tracking index) DIN EN 60112 (VDE 0303–11); IEC 60112; UL 746A >600 >600 V
Material group According to IEC 60664-1 I I
Overvoltage category per IEC 60664-1 Rated mains voltage ≤ 600 VRMS I–IV I–IV
Rated mains voltage ≤ 1000 VRMS I–III I–IV
DIN V VDE V 0884–10 (VDE V 0884–10):2006–12(2)
VIORM Maximum repetitive peak isolation voltage AC voltage (bipolar) 2121 2828 VPK
VIOWM Maximum isolation working voltage AC voltage (sine wave); time dependent dielectric breakdown (TDDB) test; see Figure 1 and Figure 2 1500 2000 VRMS
DC voltage 2121 2828 VDC
VIOTM Maximum transient isolation voltage VTEST = VIOTM
t = 60 s (qualification)
t = 1 s (100% production)		 8000 8000 VPK
VIOSM Maximum surge isolation voltage(3) Test method per IEC 60065, 1.2/50 µs waveform,
VTEST = 1.6 × VIOSM = 12800 VPK (qualification)		 8000 8000 VPK
qpd Apparent charge(4) Method a: After I/O safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 × VIORM = 2545 VPK (DW) and
3394 VPK (DWW), tm = 10 s		 ≤5 ≤5 pC
Method a: After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 × VIORM = 3394 VPK (DW) and
4525 VPK (DWW), tm = 10 s		 ≤5 ≤5
Method b1: At routine test (100% production) and preconditioning (type test)
Vini = VIORM, tini = 1 s;
Vpd(m) = 1.875 × VIORM= 3977 VPK (DW) and
5303 VPK (DWW), tm = 1 s		 ≤5 ≤5
CIO Barrier capacitance, input to output(5) VIO = 0.4 × sin (2πft), f = 1 MHz ~0.7 ~0.7 pF
RIO Isolation resistance, input to output(5) VIO = 500 V, TA = 25°C >1012 >1012 Ω
VIO = 500 V, 100°C ≤ TA ≤ 125°C >1011 >1011
VIO = 500 V at TS = 150°C >109 >109
Pollution degree 2 2
Climatic category 55/125/21 55/125/21
UL 1577
VISO Withstanding isolation voltage VTEST = VISO = 5700 VRMS, t = 60 s (qualification);
VTEST = 1.2 × VISO = 6840 VRMS,
t = 1 s (100% production)		 5700 5700 VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become equal in certain cases. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device.

6.7 Safety-Related Certifications

VDE CSA UL CQC TUV
Plan to certify according to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 and DIN EN 60950-1 (VDE 0805 Teil 1):2011-01 Plan to certify under CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 60601-1 Plan to certify according to UL 1577 Component Recognition Program Plan to certify according to GB 4943.1-2011 Plan to certify according to
EN 61010-1:2010 (3rd Ed) and
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013
Reinforced insulation
Maximum transient isolation voltage, 8000 VPK;
Maximum repetitive peak isolation voltage, 2121 VPK (DW), 2828 VPK (DWW);
Maximum surge isolation voltage, 8000 VPK		 Reinforced insulation per CSA 60950-1-07+A1+A2 and IEC 60950-1 2nd Ed., 800 VRMS (DW package) and 1450 VRMS (DWW package) max working voltage (pollution degree 2, material group I); Single protection,
5700 VRMS 		Reinforced Insulation, Altitude ≤ 5000 m, Tropical Climate, 250 VRMS maximum working voltage 5700 VRMS Reinforced insulation per
EN 61010-1:2010 (3rd Ed) up to working voltage of 600 VRMS (DW package) and 1000 VRMS (DWW package)
2 MOPP (Means of Patient Protection) per CSA 60601-1:14 and IEC 60601-1 Ed. 3.1, 250 VRMS (354 VPK) max working voltage (DW package) 5700 VRMS Reinforced insulation per
EN 60950-1:2006/A11:2009/A1:2010/
A12:2011/A2:2013 up to working voltage of 800 VRMS (DW package) and 1450 VRMS (DWW package)
Certification planned Certification planned Certification planned Certification planned Certification planned

6.8 Safety Limiting Values

Safety limiting intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DW PACKAGE
IS Safety input, output, or supply current RθJA = 82°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 3		 277 mA
RθJA = 82°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 3		 423
RθJA = 82°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 3		 554
PS Safety input, output, or total power RθJA = 82°C/W, TJ = 150°C, TA = 25°C,
see Figure 5		 1524 mW
TS Maximum safety temperature 150 °C
DWW PACKAGE
IS Safety input, output, or supply current RθJA = 84.6°C/W, VI = 5.5 V, TJ = 150°C, TA = 25°C,
see Figure 4		 269 mA
RθJA = 84.6°C/W, VI = 3.6 V, TJ = 150°C, TA = 25°C,
see Figure 4		 410
RθJA = 84.6°C/W, VI = 2.75 V, TJ = 150°C, TA = 25°C,
see Figure 4		 537
PS Safety input, output, or total power RθJA = 84.6°C/W, TJ = 150°C, TA = 25°C,
see Figure 6		 1478 mW
TS Maximum safety temperature 150 °C

The maximum safety temperature is the maximum junction temperature specified for the device. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Information is that of a device installed on a High-K test board for leaded surface-mount packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance.

6.9 DC Electrical Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IIN(EN) Leakage Current on ENx pins Internal pullup on ENx pins 13 40 μA
VCC+(UVLO) Positive-going undervoltage-lockout (UVLO) threshold 2.25 V
VCC–(UVLO) Negative-going UVLO threshold 1.7 V
VHYS(UVLO) UVLO threshold hysteresis 0.2 V
VEN(ON) EN pin turn-on threshold 0.7 VCCx V
VEN(OFF) EN pin turn-off threshold 0.3 VCCx V
VEN(HYS) EN pin threshold hysteresis 0.1 VCCx V
CMTI Common-mode transient immunity VI = VCCI(1) or 0 V;
VCM = 1000 V; see Figure 25 		100 120 kV/μs
LVDS TX
|VOD| TX DC output differential voltage RL = 100 Ω, See Figure 26 250 350 450 mV
∆VOD Change in TX DC output differential between logic 1 and 0 states RL = 100 Ω, see Figure 26 –10 0 10 mV
VOC TX DC output common mode voltage RL = 100 Ω, see Figure 26 1.125 1.2 1.375 V
∆VOC TX DC common mode voltage difference RL = 100 Ω, see Figure 26 –25 0 25 mV
IOS TX output short circuit current through OUTx OUTx = 0 10 mA
OUTxP = OUTxM 10
IOZ TX output current when in high impedance ENx = 0, OUTx from 0 to VCC –5 5 µA
COUT TX output pad capacitance on OUTx at 1 MHz DW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz		 10 pF
DWW package: ENx = 0,
DC offset = VCC / 2,
Swing = 200 mV, f = 1 MHz		 10
LVDS RX
VIC RX input common mode voltage VCC1, VCC2 ≥ 3 V 0.5 |VID| 1.2 2.4 – 0.5 |VID| V
VCC1, VCC2 < 3 V 0.5 |VID| 1.2 VCCx – 0.6 – 0.5 |VID|
VIT1 Positive going RX input differential threshold Across VIC 50 mV
VIT2 Negative going RX input differential threshold Across VIC –50 mV
IINx Input current on INx From 0 to VCCx (each input independently) 10 20 µA
IINxP – IINxM Input current balance From 0 to VCCx –6 6 µA
CIN RX input pad capacitance on INx at 1 MHz DW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz		 6.6 pF
DWW package: DC offset = 1.2 V,
Swing = 200 mV, f = 1 MHz		 7.5
(1) VCCI = Input-side VCCx; VCCO = Output-side VCCx.

6.10 DC Supply Current Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ISO7821LL
ICC1
ICC2		 Supply current
side 1 and side 2		 2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.2 3.3 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 3.4 5.1
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 6.1 9.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 7.4 11.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 6.7 10.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 7.4 11.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 8.3 12.5
4.5 V < VCC1,
VCC2 < 5.5 V		 EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.2 3.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 3.5 5.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 6.4 9.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 7.8 11.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 7.1 10.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 8.1 12.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 9.5 14.1
ISO7820LL
ICC1 Supply current
side 1		 2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.7 4.3 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 5.3 7.9
EN1 = EN2 = 1, RL = 100-Ω differential, VID≥ 50 mV 2.7 4.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 5.2 8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 4 6.1
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 4.1 6.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 4.3 6.4
4.5 V < VCC1,
VCC2 < 5.5 V		 EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 2.8 4.4
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 5.5 8.2
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 2.9 4.5
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 5.5 8.2
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 4.2 6.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 4.3 6.4
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 4.5 6.6
ISO7820LL (continued)
ICC2 Supply current
side 2		 2.25 V < VCC1, VCC2 < 3.6 V EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 1.1 1.7 mA
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 1.1 1.7
VID≥ 50 mV 9.1 13.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 9.2 13.9
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 9.2 13.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 10.3 15.5
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 12.1 17.9
4.5 V < VCC1,
VCC2 < 5.5 V		 EN1 = EN2 = 0, OUTx floating, VID ≥ 50 mV 1.2 1.8
EN1 = EN2 = 0, OUTx floating, VID ≤ –50 mV 1.2 1.8
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≥ 50 mV 9.7 14.7
EN1 = EN2 = 1, RL = 100-Ω differential, VID ≤ –50 mV 9.7 14.8
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
1 Mbps		 9.7 14.7
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
50 Mbps		 11.5 17.3
EN1 = EN2 = 1, RL = 100-Ω differential, data communication at
100 Mbps		 14.2 21

6.11 Switching Characteristics

(over recommended operating conditions unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LVDS CHANNEL
tPLH
tPHL		 Propagation delay time 17 25 ns
PWD Pulse width distortion |tPHL – tPLH| 0 4.5 ns
tsk(o) Channel-to-channel output skew time Same directional channels, same voltage and temperature 2.5 ns
tsk(pp) Part-part skew Same directional channels, same voltage and temperature 4.5 ns
tCMset Common-mode settling time after
EN = 0 to EN = 1 transition.		 Common-mode capacitive
load = 100 pF to 0.5 nF		 20 µs
tfs Default output delay time from input power loss Measured from the time VCC goes below 1.7 V, see Figure 24 0.2 9 µs
tie Time interval error, or peak-to-peak jitter
216 – 1 PRBS data at 100 Mbps;
RX VID = 350 mVPP, 1 ns trf 10% to 90%, TA = 25°C, VCC1, VCC2 = 3.3 V		 1 ns
LVDS TX AND RX
trf TX differential rise/fall times (20% to 80%) See Figure 22 300 780 1380 ps
∆VOC(pp) TX common-mode voltage peak-to-peak at 100 Mbps 0 150 mVPP
tPLZ, tPHZ TX disable time—valid output to HiZ See Figure 23 10 20 ns
tPZH Enable propagation delay, high impedance-to-high output See Figure 23 10 20 ns
tPZL Enable propagation delay, high impedance-to-low output See Figure 23 2 2.5 μs
|VID| Magnitude of RX input differential voltage for valid operation Driven with voltage sources on RX pins, see the figures in the Parameter Measurement Information section 100 600 mV
trf(RX) Allowed RX input differential rise and fall times (20% to 80%) See Figure 27 1 0.3 × UI(1) ns
(1) UI is the unit interval.

6.12 Insulation Characteristics Curves

ISO7820LL ISO7821LL tddb_curve_reinforced_dw.gif
TA upto 150°C Operating lifetime = 135 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 1500 VRMS
Figure 1. Reinforced Isolation Capacitor Lifetime Projection for Devices in DW Package
ISO7820LL ISO7821LL D006_sllset8.gif Figure 3. Thermal Derating Curve for Limiting Current for DW Package
ISO7820LL ISO7821LL D007_sllset8.gif Figure 5. Thermal Derating Curve for Limiting Power for DW Package
ISO7820LL ISO7821LL tddb_curve_reinforced_dww.gif
TA upto 150°C Operating lifetime = 34 years
Stress-voltage frequency = 60 Hz
Isolation working voltage = 2000 VRMS
Figure 2. Reinforced Isolation Capacitor Lifetime Projection for Devices in DWW Package
ISO7820LL ISO7821LL D008_sllset8.gif Figure 4. Thermal Derating Curve for Limiting Current for DWW Package
ISO7820LL ISO7821LL D009_sllset8.gif Figure 6. Thermal Derating Curve for Limiting Power for DWW Package

6.13 Typical Characteristics

ISO7820LL ISO7821LL D001_sllset8.gif
TA = 25°C CH-A toggle
Figure 7. ISO7821LL Supply Current vs Data Rate (CH-A)
ISO7820LL ISO7821LL D003_sllset8.gif
TA = 25°C
Figure 9. ISO7821LL Supply Current vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL D005_sllset8.gif
Data rate = 100 Mbps CH-B toggle
Figure 11. ISO7821LL Supply Current vs Temperature
(CH-B)
ISO7820LL ISO7821LL D021_sllset8.gif
TA = 25°C CH-B toggle
Figure 13. ISO7820LL Supply Current vs Data Rate
(CH-B)
ISO7820LL ISO7821LL D023_sllset8.gif
Data rate = 100 Mbps CH-A toggle
Figure 15. ISO7820LL Supply Current vs Temperature
(CH-A)
ISO7820LL ISO7821LL D012_sllset8.gif
Figure 17. Propagation Delay Time vs Temperature
ISO7820LL ISO7821LL D014_sllset8.gif
TA = 25°C
Figure 19. Output Voltage vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL waveform_disable_time_sllset8.gif Figure 21. Disable Time (tPLZ, tPHZ)
ISO7820LL ISO7821LL D002_sllset8.gif
TA = 25°C CH-B toggle
Figure 8. ISO7821LL Supply Current vs Data Rate (CH-B)
ISO7820LL ISO7821LL D004_sllset8.gif
Data rate = 100 Mbps CH-A toggle
Figure 10. ISO7821LL Supply Current vs Temperature
(CH-A)
ISO7820LL ISO7821LL D020_sllset8.gif
TA = 25°C CH-A toggle
Figure 12. ISO7820LL Supply Current vs Data Rate
(CH-A)
ISO7820LL ISO7821LL D022_sllset8.gif
TA = 25°C
Figure 14. ISO7820LL Supply Current vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL D010_sllset8.gif
Data rate = 100 Mbps CH-B toggle
Figure 16. ISO7820LL Supply Current vs Temperature
(CH-B)
ISO7820LL ISO7821LL D013_sllset8.gif
TA = 25°C
Figure 18. Propagation Delay Time vs VCCx Output Supply Voltage
ISO7820LL ISO7821LL waveform_disable_to_enable_time_sllset8.gif
Figure 20. Disable to Enable Time (tPZH, tPZL)