SNOSBJ2 Data sheet

SNOSBJ2B August 2000 – January 2016 LM119

PRODUCTION DATA.

Package Options

Mechanical Data (Package|Pins)

J|14
- MGDI009
LME|10
- MMBC006B

Thermal pad, mechanical data (Package|Pins)

Orderable Information

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾⁽³⁾

		MIN	MAX	UNIT
Total supply voltage			36	V
Output to negative supply voltage			36	V
Ground to negative supply voltage			25	V
Ground to positive supply voltage			18	V
Differential input voltage		–5	+5	V
Input voltage⁽⁴⁾		–15	+15	V
Power dissipation⁽⁵⁾			500	mW
Output short circuit duration			10	sec
Lead temperature (soldering, 10 sec.)			260	°C
Soldering information⁽⁶⁾	Dual-In-Line Package Soldering (10 seconds)		260	°C
	Small Outline Package Vapor Phase (60 seconds)		215
	Small Outline Package Infrared (15 seconds)		220
Operating temperature	LM119	–55	125	°C
	LM219	–25	85
	LM319A, LM319	0	70
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.

(3) Refer to RETS119X for LM119H/883 and LM119J/883 specifications.

(4) For supply voltages less than ±15 V the absolute maximum input voltage is equal to the supply voltage.

(5) The maximum junction temperature of the LM119 is 150°C, while that of the LM219 is 110°C. For operating at elevated temperatures, devices in the H10 package must be derated based on a thermal resistance of 160°C/W, junction to ambient, or 19°C/W, junction to case. The thermal resistance of the J14 and N14 packages is 100°C/W, junction to ambient.

(6) See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices.

5.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±800	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

5.3 Thermal Information

THERMAL METRIC⁽¹⁾		LM119, LM219, LM319			UNIT
		TO-100 (LME)	PDIP (NFF)	CDIP (J)
		10 PINS	14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	160	100	100	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	19	NA	NA	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

5.4 Electrical Characteristics LM119, LM219

These specifications apply for V_S = ±15 V, and the Ground pin at ground, and −55°C ≤ TA ≤ +125°C, unless otherwise stated. With the LM219, all temperature specifications are limited to −25°C ≤ TA ≤ +85°C. The offset voltage, offset current and bias current specifications apply for any supply voltage from a single 5-V supply up to ±15-V supplies. Do not operate the device with more than 16 V from ground to V_S.

PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	UNIT
Input Offset Voltage⁽¹⁾	T_A= 25°C, RS ≤ 5k		0.7	4	mV
Input Offset Current⁽¹⁾	T_A= 25°C		30	75	nA
Input Bias Current	T_A= 25°C		150	500	nA
Voltage Gain	T_A= 25°C⁽²⁾	10	40		V/mV
Response Time⁽³⁾	T_A= 25°C, V_S = ±15 V		80		ns
Saturation Voltage	V_IN ≤ −5 mV, I_OUT = 25 mA T_A = 25°C		0.75	1.5	V
Output Leakage Current	V_IN ≥ 5 mV, V_OUT = 35 V T_A = 25°C		0.2	2	µA
Input Offset Voltage⁽¹⁾	R_S ≤ 5k			7	mV
Input Offset Current⁽¹⁾				100	nA
Input Bias Current				1000	nA
Input Voltage Range	V_S = ±15 V	–12	±13	+12	V
Input Voltage Range	V⁺ = 5 V, V^- = 0	1		3	V
Saturation Voltage	V⁺≥ 4.5 V, V⁻ = 0 V_IN ≤ −6 mV, I_SINK ≤ 3.2 mA				V
	T_A ≥ 0°C		0.23	0.4
	T_A ≤ 0°C			0.6
Output Leakage Current	V_IN ≥ 5 mV, V_OUT = 35 V, V⁻ = V_GND = 0 V		1	10	µA
Differential Input Voltage				±5	V
Positive Supply Current	T_A = 25°C, V⁺ = 5 V, V⁻= 0		4.3		mA
Positive Supply Current	T_A = 25°C, V_S = ±15 V		8	11.5	mA
Negative Supply Current	T_A = 25°C, V_S = ±15 V		3	4.5	mA

(1) The offset voltages and offset currents given are the maximum values required to drive the output within a volt of either supply with a 1-mA load. Thus, these parameters define an error band and take into account the worst case effects of voltage gain and input impedance.

(2) Output is pulled up to 15 V through a 1.4-kW resistor.

(3) The response time specified is for a 100-mV input step with 5-mV overdrive.

5.5 Electrical Characteristics LM319, LM319A

These specifications apply for V_S = ±15 V, and 0°C ≤ T_A ≤ 70°C, unless otherwise stated. The offset voltage, offset current, and bias current specifications apply for any supply voltage from a single 5-V supply up to ±15-V supplies. Do not operate the device with more than 16 V from ground to V_S.

PARAMETER	TEST CONDITIONS	LM319A			LM319			UNIT
PARAMETER	TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
Input Offset Voltage⁽¹⁾	T_A= 25°C, RS ≤ 5k		0.5	1		2	8	mV
Input Offset Current⁽¹⁾	T_A= 25°C		20	40		80	200	nA
Input Bias Current	T_A= 25°C		150	500		250	1000	nA
Voltage Gain	T_A= 25°C⁽²⁾	20	40		8	40		V/mV
Response Time⁽³⁾	T_A= 25°C, V_S = ±15 V		80			80		ns
Saturation Voltage	V_IN ≤ −10 mV, I_OUT = 25 mA T_A = 25°C		0.75	1.5		0.75	1.5	V
Output Leakage Current	V_IN ≥ 10 mV, V_OUT = 35 V V⁻ = V_GND = 0 V, T_A = 25°C		0.2	10		0.2	10	µA
Input Offset Voltage⁽¹⁾	R_S ≤ 5k			10			10	mV
Input Offset Current⁽¹⁾				300			300	nA
Input Bias Current				1000			1200	nA
Input Voltage Range	V_S = ±15 V		±13			±13		V
Input Voltage Range	V⁺ = 5 V, V^- = 0	1		3	1		3	V
Saturation Voltage	V⁺≥ 4.5 V, V⁻ = 0 V_IN ≤ −10 mV, I_SINK ≤ 3.2 mA		0.3	0.4		0.3	0.4	V
Differential Input Voltage				±5			±5	V
Positive Supply Current	T_A = 25°C, V⁺ = 5 V, V⁻= 0		4.3			4.3		mA
Positive Supply Current	T_A = 25°C, V_S = ±15 V		8	12.5		8	12.5	mA
Negative Supply Current	T_A = 25°C, V_S = ±15 V		3	5		3	5	mA