SNVS009H November   1999  – March 2016 LM2665

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuit
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Circuit Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Voltage Doubler
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Requirements
          1. 9.2.1.2.1 Positive Voltage Doubler
          2. 9.2.1.2.2 Capacitor Selection
          3. 9.2.1.2.3 Paralleling Devices
          4. 9.2.1.2.4 Cascading Devices
          5. 9.2.1.2.5 Regulating VOUT
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Splitting V+ In Half
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
V+ to GND voltage 5.8 V
OUT to GND voltage 11.6 V
OUT to V+ voltage 5.8 V
SD (GND − 0.3 V) (V+ + 0.3 V)
V+ and OUT continuous output current 50 mA
Output short-circuit duration to GND(3) 1 sec
Continuous power dissipation (TA = 25°C)(4)
600 mW
TJ-MAX(4) 150 °C
Lead temperature (soldering, 10 sec.) 300 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) OUT may be shorted to GND for one second without damage. However, shorting OUT to V+ may damage the device and must be avoided. Also, for temperatures above 85°C, OUT must not be shorted to GND or V+, or device may be damaged.
(4) The maximum allowable power dissipation is calculated by using PD-MAX = (TJ-MAX − TA)/RθJA, where TJ-MAX is the maximum junction temperature, TA is the ambient temperature, and RθJA is the junction-to-ambient thermal resistance of the specified package.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Operating junction temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) LM2665 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 210 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

MIN and MAX limits apply over the full operating temperature range. Unless otherwise specified: TJ = 25°C, V+ = 5 V,
C1 = C2 = 3.3 μF.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
V+ Supply voltage 2.5 5.5 V
IQ Supply current No load 650 1250 µA
ISD Shutdown supply current 1 µA
VSD Shutdown pin input voltage Normal operation 2(4) V
Shutdown mode 0.8(5)
IL Output current 40 mA
RSW Sum of the Rds(on)of the four internal MOSFET switches IL = 40 mA 3.5 8 Ω
ROUT Output resistance(6) IL = 40 mA 12 25 Ω
ƒOSC Oscillator frequency See(7) 80 160 kHz
ƒSW Switching frequency See(7) 40 80 kHz
PEFF Power efficiency RL (1 kΩ) between GND and OUT 90% 94%
IL = 40 mA to GND 90%
VOEFF Voltage conversion efficiency No load 99% 99.96%
(1) In the test circuit, capacitors C1 and C2 are 3.3-µF, 0.3-Ω maximum ESR capacitors. Capacitors with higher ESR increase output resistance, reduce output voltage and efficiency.
(2) Min. and Max. limits are ensured by design, test, or statistical analysis.
(3) Typical numbers are not ensured but represent the most likely norm.
(4) The minimum input high for the SD pin equals 40% of V+.
(5) The maximum input low for the SD pin equals 20% of V+.
(6) Specified output resistance includes internal switch resistance and capacitor ESR. See the details in Application and Implementation for simple negative voltage converter.
(7) The output switches operate at one half of the oscillator frequency, ƒOSC = 2ƒSW.

6.6 Typical Characteristics

(Circuit of Figure 9, V+ = 5 V unless otherwise specified)
LM2665 10004904.png
Figure 1. Supply Current vs Supply Voltage
LM2665 10004905.png
Figure 2. Supply Current vs Temperature
LM2665 10004906.png
Figure 3. Output Source Resistance vs Supply Voltage
LM2665 10004908.png
Figure 5. Output Voltage Drop vs Load Current
LM2665 10004911.png
Figure 7. Oscillator Frequency vs Temperature
LM2665 10004907.png
Figure 4. Output Source Resistance vs Temperature
LM2665 10004910.png
Figure 6. Oscillator Frequency vs Supply Voltage
LM2665 10004912.png
Figure 8. Shutdown Supply Current vs Temperature