SNOSC66D MARCH   2012  – September 2016 LM3017

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 True Shutdown
      2. 7.3.2 Operation of the EN/MODE Pin
      3. 7.3.3 EN/MODE Control
      4. 7.3.4 Overvoltage Protection
      5. 7.3.5 Thermal Protection
      6. 7.3.6 Current Limit Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode
      2. 7.4.2 Boost Mode
      3. 7.4.3 Standby Mode
      4. 7.4.4 Start-Up Boost Mode
      5. 7.4.5 Pass-Through Mode
      6. 7.4.6 Start-Up Pass-Through Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Programming the Output Voltage
        2. 8.2.2.2  Power Inductor Selection
        3. 8.2.2.3  Setting the Output Current
        4. 8.2.2.4  Additional Slope Compensation
        5. 8.2.2.5  Current Limit With Additional Slope Compensation
        6. 8.2.2.6  Power Diode Selection
        7. 8.2.2.7  Low-Side MOSFET Selection (Switching MOSFET)
        8. 8.2.2.8  Pass MOSFET Selection (High-Side MOSFET)
        9. 8.2.2.9  Input Capacitor Selection
        10. 8.2.2.10 Output Capacitor Selection
        11. 8.2.2.11 VCC Decoupling Capacitor
        12. 8.2.2.12 Slope Compensation Ramp
        13. 8.2.2.13 Control Loop Compensation
          1. 8.2.2.13.1 Compensation Network Components Calculations
          2. 8.2.2.13.2 Compensation Design Example
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Filter Capacitors
      2. 10.1.2 Sense Lines
      3. 10.1.3 Compact Layout
      4. 10.1.4 Ground Plane and Vias
    2. 10.2 Layout Examples
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM3017 may be operated in either continuous or discontinuous conduction mode. The following descriptions assume continuous conduction operation (CCM). This mode of operation has higher efficiency and lower EMI characteristics than the discontinuous mode.

8.2 Typical Application

LM3017 30180943.gif Figure 16. 1-A High Efficiency Step-Up (Boost) Converter

8.2.1 Design Requirements

To properly size the components for the application, the designer requires the following parameters: Input voltage range, output voltage, output current, and switching frequency. These four main parameters affect the choices of component available to achieve a proper system behavior.

Table 2 lists the design parameters for this application example.

Table 2. Design Parameters

PARAMETER VALUE
Input voltage, VIN 8 V to 12 V
Output voltage, VOUT 15 V
Output current, IOUT 1 A
Switching frequency, fS 600 kHz

8.2.2 Detailed Design Procedure

The most common topology for the LM3017 is the boost or step-up topology. The boost converter converts a low input voltage into a higher output voltage. The basic configuration for a boost regulator is shown in Figure 17. In continuous conduction mode (when the inductor current never reaches zero at steady state), the boost regulator operates in two cycles. In the first cycle of operation, MOSFET Q is turned on and energy is stored in the inductor. During this cycle, diode D1 is reverse biased and load current is supplied by the output capacitor, COUT.

In the second cycle, MOSFET Q is off and the diode is forward biased. The energy stored in the inductor is transferred to the load and output capacitor. The ratio of these two cycles determines the output voltage. The output voltage is defined with Equation 1.

Equation 1. LM3017 eq1_vout_nosc66.gif

Including the voltage drop of the diode in Equation 2.

Equation 2. LM3017 eq2_vout_nosc66.gif

where

  • D is the duty cycle of the switch
  • VD1 is the forward voltage drop of the diode

The following sections describe selection of components for a boost converter.

LM3017 30180922.gif Figure 17. 4 Simplified Boost Converter Diagram
(a) First Cycle of Operation, (b) Second Cycle of Operation

8.2.2.1 Programming the Output Voltage

The output voltage can be programmed using a resistor divider between the output and the feedback pins, as shown in Figure 20. The resistors are selected such that the voltage at the feedback pin is equal to VFB (see Electrical Characteristics). RFBT and RFBB can be selected using Equation 3.

Equation 3. LM3017 eq3_vout3_nosc66.gif
LM3017 30180960.gif Figure 18. Maximum Output Voltage
LM3017 30180961.gif Figure 19. Minimum Output Voltage

Figure 18 shows maximum regulated output voltage based on maximum duty cycle value of 85% and by assuming a voltage drop on the output diode of 0.5 V and 90% efficiency. Figure 19 shows the minimum regulated output voltage, the calculation is based on minimum on time of 126 ns (typical) that generates a minimum duty cycle equal to Equation 4.

Equation 4. DMIN = tON(min) × fS = 0.076

where

  • fS is the switching frequency and it's equal to 600 kHz and by assuming 90% efficiency

8.2.2.2 Power Inductor Selection

The inductor is one of the two energy storage elements in a boost converter.

Choose the minimum IOUT to determine the minimum inductance L. A common choice is to set (2 x ΔiL) from 30% to 50% of IL. Choosing an appropriate core size for the inductor involves calculating the average and peak currents expected through the inductor. In a boost converter the inductor current IL, the peak of the inductor current and the inductor current ripple ΔiL are equal to Equation 5.

Equation 5. LM3017 eq4_il_nosc66.gif

The inductance used is a tradeoff between size and cost. Larger inductance means lower input ripple current; however, because the inductor is connected to the output during the off-time only, there is a limit to the reduction in output voltage ripple. Lower inductance results in smaller, less expensive magnetics.

All the analysis in this data sheet assumes operation in continuous conduction mode. To operate in continuous conduction mode, the conditions in Equation 6 must be met.

Equation 6. LM3017 eq5_il2_nosc66.gif

A core size with ratings higher than these values must be chosen. If the core is not properly rated, saturation dramatically reduces overall efficiency or damage the power stage. Choose an inductor with a saturation current value higher than ILpeak. The LM3017 senses the peak current through the switch. The peak current through the switch is the same as the peak current calculated in the previous equation.

Losses due to DCR of the inductance can be easily calculated with Equation 7.

Equation 7. LM3017 eq6_rl_nosc66.gif

No core losses are considered.

8.2.2.3 Setting the Output Current

The maximum amount of current that can be delivered at the output can be controlled by the sense resistor, RSEN. Current limit occurs when the voltage that is generated across the sense resistor equals the current sense threshold voltage, VSENSE. Limits for VSENSE are specified in Electrical Characteristics. This is expressed with Equation 8.

Equation 8. Isw(peak) × RSEN = VSENSE

The peak current through the switch is equal to the peak inductor current in Equation 9.

Equation 9. Isw(peak) = IL(max) + ΔiL

Therefore for a boost converter in Equation 10.

Equation 10. LM3017 eq7_isw_nosc66.gif

Combining the two equations yields an expression for RSEN and includes a 20% margin on the peak of the switching current with Equation 11.

Equation 11. LM3017 eq8_rsen_nosc66.gif

Evaluate RSEN at the maximum and minimum VIN values and choose the smallest RSEN calculated.

LM3017 30180920.gif Figure 20. Adjusting the Output Voltage

8.2.2.4 Additional Slope Compensation

It is good design practice to only add as much slope compensation as required to avoid instability. Additional slope compensation (see Figure 24) minimizes the influence of the sensed current in the control loop. With very large slope compensation the control loop characteristics are similar to a voltage mode regulator which compares the error voltage to a saw tooth waveform rather than the inductor current. It is possible to calculate the minimum value of RS to meet Equation 12.

Equation 12. MC > M2/2

Hence Equation 13,

Equation 13. LM3017 eq9_rs_nosc66.gif

where

  • K = 40 µA

If the result of the previous equation is negative, it means that no additional slope compensation is required. TI recommends a 100-Ω resistor.

8.2.2.5 Current Limit With Additional Slope Compensation

If an external slope compensation resistor is used, then the internal control signal is modified and this has an effect on the current limit.

If RS is used, then this adds to the existing slope compensation. The command voltage, VCS, is then given by Equation 14.

Equation 14. VCS = VSL + ΔVSL

where

  • VSENSE is a defined parameter in Electrical Characteristics
  • VSL is the amplitude of the internal compensation ramp
  • ΔVSL = RS x K is the additional slope compensation generated

This changes the equation for RSEN to Equation 15.

Equation 15. LM3017 eq10_rsen_nosc66.gif

Because ΔVSL = RS × K as defined earlier, RS can be used to provide an additional method for setting the current limit. In some designs RS can also be used to help filter noise to keep the ISEN pin quiet. Dissipation due to RSEN resistor is equal to Equation 16.

Equation 16. LM3017 eq11_psen_nosc66.gif

8.2.2.6 Power Diode Selection

Observation of the boost converter circuit shows that the average current through the diode is the average output current, and the peak current through the diode is the peak current through the inductor. The peak diode current can be calculated using Equation 17.

Equation 17. ID(Peak) = [IOUT / (1 − D)] + ΔiL

The peak reverse voltage for a boost converter is equal to the regulator output voltage. The diode must be capable of handling this peak reverse voltage as well as the output rms current. To improve efficiency, TI recommends a low forward drop Schottky diode due to low forward drop and near-zero reverse recovery time. The overall efficiency becomes more dependent on the selection of D at low duty cycles, where the boost diode carries the load current for an increasing percentage of the time. This power dissipation can be calculated by checking the typical diode forward voltage VD, from the I-V curve on the diode's datasheet and the multiplying it by IO. Diode data sheets also provides a typical junction-to-ambient thermal resistance, RθJA, which can be used to estimate the operating die temperature of the Schottky. Multiplying the power dissipation (PD = IO × VD) by RθJA gives the temperature rise. The diode case size can then be selected to maintain the Schottky diode temperature below the operational maximum.

8.2.2.7 Low-Side MOSFET Selection (Switching MOSFET)

The drive pin, DR, of the LM3017 must be connected to the gate of an external MOSFET. In a boost topology, the drain of the external N-Channel MOSFET is connected to the inductor and the source is connected to the ground. The drive pin voltage, VDR, depends on the input voltage (see Typical Characteristics).

The selected MOSFET directly affects the efficiency. The critical parameters for selection of a MOSFET are:

  1. Minimum threshold voltage, VTH(MIN)
  2. On-resistance, RDS(ON)
  3. Total gate charge, Qg
  4. Reverse transfer capacitance, CRSS
  5. Maximum drain to source voltage, VDS(MAX)

The off-state voltage of the MOSFET is approximately equal to the output voltage. VDS(MAX) of the MOSFET must be greater than the output voltage plus the voltage drop across the output diode (20% margin recommended).

The power losses in the MOSFET can be categorized into conduction losses, gate charging losses and switching losses. RDS(ON) is required to estimate the conduction losses. The conduction loss, PCOND, is the I2R loss across the MOSFET. The maximum conduction loss is given by Equation 18 and Equation 19.

Equation 18. LM3017 eq12_pcond_nosc66.gif

where

  • DMAX is the maximum duty cycle
Equation 19. LM3017 eq13_dmax_nosc66.gif

To consider the increase in MOSFET on resistance due to heating, a factor of 1.3 is introduced, hence Equation 20.

Equation 20. PCOND_real = PCOND(max) × 1.3

Gate charging loss, PG, results from the current required to charge and discharge the gate capacitance of the power MOSFET and is approximated with Equation 21.

Equation 21. PG = VCC × QG fS

QG is the total gate charge of the MOSFET. Gate charge loss differs from conduction and switching losses because the actual dissipation occurs in the LM3017 and not in the MOSFET itself. This loss, PVCC, is estimated with Equation 22.

Equation 22. PVCC = (VIN – VCC) × QG × fS

The switching losses are very difficult to calculate due to changing parasitics of a given MOSFET in operation. Often, the individual MOSFET datasheet does not give enough information to yield a useful result. The following formulas give a rough idea how the switching losses are calculated with Equation 23.

Equation 23. LM3017 eq14_psw_nosc66.gif

where

  • tLH and tHL are rise and fall times of the MOSFET

8.2.2.8 Pass MOSFET Selection (High-Side MOSFET)

The VG pin drives the gate of the high side MOSFET (Pass FET Q2). This requires special considerations. When the output is shorted, this FET must sustain the full input voltage and the short-circuit current simultaneously. This is due to the fact that the controller regulates the short-circuit current in a quasi-linear manner, through Q2. This power pulse only lasts for TLIM2 or TSC, depending on the operational mode. Therefore, the designer must carefully examine the SOA curve for the desired FET before committing to the design. Equation 24 and Equation 25 give the maximum energy pulses that Q2 is required to survive.

Equation 24. LM3017 eq15_e1_nosc66.gif
Equation 25. LM3017 eq16_e2_nosc66.gif

These two energy points must fall within the SOA of the selected FET. In addition, Q2 must have a low threshold voltage and low RDS(on) for high efficiency. Power dissipation during boost mode is given by Equation 26.

Equation 26. LM3017 eq17_pq2_nosc66.gif

8.2.2.9 Input Capacitor Selection

Due to the presence of an inductor at the input of a boost converter, the input current waveform is continuous and triangular. The inductor ensures that the input capacitor sees fairly low ripple currents. However, as the input capacitor gets smaller, the input ripple goes up. The rms current in the input capacitor is given by Equation 27.

Equation 27. LM3017 eq18_Icin_nosc66.gif

The input capacitor must be capable of handling this rms current. Although the input capacitor is not as critical in a boost application, low values can cause impedance interactions. Therefore, a good quality capacitor must be chosen in the range of 10 µF to 20 µF. Furthermore, TI recommends a low-ESR, 0.1-µF ceramic bypass capacitor to avoid transients and ringing due to parasitics. Bypass capacitors must be placed as close as possible to the VIN pin and grounded close to the GND pin on the IC to minimize additional ESR and ESL. Equation 28 can be used to define the input voltage ripple.

Equation 28. LM3017 eq19_deltaV_nosc66.gif

where

  • ΔiLpp = 2 × ΔiL is the peak-to-peak inductor current ripple
  • ΔVipp is the peak-to-peak input voltage ripple

Many times it is necessary to use an electrolytic capacitor on the input in parallel with the ceramics. The ESR of this capacitor can help to damp any ringing on the input supply caused by long power leads.

8.2.2.10 Output Capacitor Selection

The output capacitor in a boost converter provides all the output current when the inductor is charging and it determines the steady state output voltage ripple ΔVOpp. As a result it sees very large ripple currents. The output capacitor must be selected based on its capacitance CO, its equivalent series resistance ESR and its RMS current rating. The rms current in the output capacitor is calculated with Equation 29.

Equation 29. LM3017 eq20_Icout_nosc66.gif

where

  • ΔiL is the inductor ripple current
  • D is the duty cycle

The magnitude of the output voltage ripple during the on-time is equal to the ripple voltage during the off-time and it is composed of two parts. For simplicity, the analysis is performed for off-time only.

The first part of the ripple voltage is the surge created as the output diode D turns on. At this point inductor or diode current is at the peak value, and the ripple voltage increase can be calculated with Equation 30.

Equation 30. ΔVO1 = IPK × ESR

where

  • IPK = IOUT / (1 − D)

The second portion of the ripple voltage is the increase due to the charging of CO through the output diode. This portion can be approximated with Equation 31.

Equation 31. ΔVO2 = (IO / CO) × (D / fS)

Equation 32 can be used to define the output voltage ripple.

Equation 32. LM3017 eq21_deltaV_nosc66.gif

The ESR of the output capacitor(s) has a strong influence on the slope and direction of the output voltage ripple. Capacitors with high ESR such as tantalum and aluminum electrolytic create an output voltage ripple that is dominated by ΔVO1 with a shape shown in Figure 21. Ceramic capacitors, in contrast, have a very low ESR and lower capacitance, and the shape of the output voltage ripple is dominated by ΔVO2 with a shape shown in Figure 22.

LM3017 30180915.gif Figure 21. ΔVOpp Using High ESR Capacitors
LM3017 30180916.gif Figure 22. ΔVOpp Using Low ESR Capacitors

Ceramic capacitors are recommended with a typical value from 10 µF to 100 µF. The minimum quality dielectric that is suitable for switching power supply output capacitors is X5R, while X7R (or better) is preferred. Careful attention must be paid to the DC voltage rating and case size, as ceramic capacitors can lose 60% or more of their rated capacitance at the maximum DC voltage. This is the reason that ceramic capacitors often derate to 50% of their capacitance at their working voltage.

8.2.2.11 VCC Decoupling Capacitor

The internal bias of the LM3017 comes from either the internal bias voltage generator as shown in the block diagram or directly from the voltage at the VIN pin. At input voltages lower than 6 V, the internal IC bias is the input voltage and at voltages above 6 V the internal bias voltage generator of the LM3017 provides the bias. A good quality ceramic bypass capacitor must be connected from the VCC pin to the PGND pin for proper operation. This capacitor supplies the transient current required by the internal MOSFET driver, as well as filtering the internal supply voltage for the controller. TI recommends a value of between 0.47 µF and 4.7 µF.

8.2.2.12 Slope Compensation Ramp

The LM3017 uses a current mode control scheme. The main advantages of current mode control are inherent cycle-by-cycle current limit for the switch, simpler control loop characteristics and excellent line and load transient response. However, there is a natural instability due to subharmornic oscillations that occurs for duty cycles, D, greater than 50% if slope compensation is not addressed in Equation 33.

Equation 33. MC > M2 / 2

For best input noise immunity, use Equation 34.

Equation 34. MC = M2

For best sub-harmonic suppression, use Equation 35.

Equation 35. MC = M2 / 2

where

  • MC is the slope of the compensation ramp
  • M1 is the slope of the inductor current during the ON time
  • M2 is the slope of the inductor current during the OFF time
  • RSEN is the sensing resistor value
  • VOUT represents the output voltage
  • VIN represents the input voltage
  • A is equal to 0.86 and it is the internal sensing amplification of the LM3017

In the case of the boost topology, use Equation 36 and Equation 37.

Equation 36. M1 = [VIN / L] × RSEN × A
Equation 37. M2 = [(VOUT – VIN) / L] × RSEN × A

The compensation ramp is added internally in the LM3017. The slope of this compensation ramp is selected to satisfy most applications, and its value depends on the switching frequency. This slope can be calculated using Equation 38.

Equation 38. MC = VSL × fS

In the above equation, VSL is the amplitude of the internal compensation ramp and fS is the controller's switching frequency. Limits for VSL are specified in Electrical Characteristics.

To provide the user additional flexibility, a patented scheme is implemented inside the IC to increase the slope of the compensation ramp externally, if the requirement arises. Adding a single external resistor, RS (as shown in Figure 24) increases the amplitude of the compensation ramp as shown in Figure 23 where Equation 39.

LM3017 301809a1.gif Figure 23. Additional Slope Compensation Added Using External Resistor RS
Equation 39. ΔVSL = K × Rs

where

  • K = 40 µA typically and changes slightly as the switching frequency changes

A more general equation for the slope compensation ramp, MC, is shown in Equation 40 to include ΔVSL caused by the resistor, Rs.

Equation 40. MC = (VSL + ΔVSL) × fs
LM3017 30180913.gif Figure 24. Increasing the Slope of the Compensation Ramp

An additional capacitor, CS, could be added if the sensing signal generated by RSEN is very noisy (parasitic circuit capacitance, inductance, and gate drive current create a spike in the current sense voltage at the point where Q1 turns on). The time constant RSEN x CS must be long enough to reduce the parasitics spike without significantly affecting the shape of the actual current sense voltage (a typical range is from 100 pF to 2.2 nF).

8.2.2.13 Control Loop Compensation

The LM3017 uses peak current-mode PWM control to correct changes in output voltage due to line and load transients. Peak current-mode provides inherent cycle-by-cycle current limiting, improved line transient response, and easier control loop compensation. The control loop is comprised of two parts. The first is the power stage, which consists of the pulse width modulator, output filter, and the load. The second part is the error amplifier. Figure 25 shows the regulator control loop components.

LM3017 30180907.gif Figure 25. Power Stage and Error Amp

The power stage in a CCM peak current mode boost converter consists of the DC gain, GVC0, a single low frequency pole, fP, the ESR zero, fZ, a right-half plane zero, fR, and a double pole resulting from the sampling of the peak current. The power stage transfer function (also called the Control-to-Output transfer function) can be written with Equation 41.

Equation 41. LM3017 eq22_Gvc_nosc66.gif

The DC gain is defined with Equation 42.

Equation 42. LM3017 eq23_Gvco_nosc66.gif

where

  • RO = VOUT / IOUT

In the equation for GVC0, DC gain is highest when input voltage and output current are at the maximum. The system ESR zero is defined with Equation 43.

Equation 43. LM3017 eq24_fz_nosc66.gif

The low frequency pole is Equation 44.

Equation 44. LM3017 eq25_fp_nosc66.gif

The right-half plane zero is Equation 45.

Equation 45. LM3017 eq26_fR_nosc66.gif

The sampling double pole quality factor is Equation 46.

Equation 46. LM3017 eq27_Qn_nosc66.gif

The sampling double corner frequency is Equation 47.

Equation 47. ωn = π × fS

The natural inductor current slope is Equation 48.

Equation 48. M1 = RSEN × VIN / L

The external ramp slope is Equation 49.

Equation 49. MC = (VSL + ΔVSL) × fS

A step-up converter produces an undesirable right-half plane zero in the regulation feedback loop. This requires compensating the regulator such that the crossover frequency occurs well below the frequency of the right-half plane zero

8.2.2.13.1 Compensation Network Components Calculations

As shown in Figure 25, the LM3017 uses a compensation network base on a transconductance amplifier. The closed-loop transfer function is defined with Equation 50 through Equation 54.

Equation 50. T(s) = GVA(s) × GVC(s)

where

  • GVA(s) is the transfer function implemented by the compensation network
Equation 51. LM3017 eq28_gva_nosc66.gif
Equation 52. LM3017 eq29_wz1_nosc66.gif
Equation 53. LM3017 eq30_wp1_nosc66.gif
Equation 54. LM3017 eq31_WP2_nosc66.gif

To stabilize the regulator, ensure that the regulator crossover frequency is less than or equal to one-fifth of the right-half plane zero with Equation 55.

Equation 55. LM3017 eq32_fc_nosc66.gif

To determine the crossover frequency it is important to note that, at that frequency, the compensation impedance (ZCOMP) is dominated by a resistor, and the output impedance (ZOUT) is dominated by the impedance of an output capacitor. Therefore, when solving for the crossover frequency, the equation (by definition of the crossover frequency) of the loop gain is simplified to Equation 56.

Equation 56. LM3017 eq33_T_nosc66.gif

where

  • |T| is the loop gain magnitude
  • VFB is feedback voltage, 1.275 V
  • VOUT is the output voltage
  • VIN is the input voltage
  • Gm is the error amplifier transconductance
  • ZCOMP is the impedance of the compensation network from the COMP pin to ground
  • RSEN is the current sensing resistor
  • A is equal to 0.86 and it is the internal sensing amplification of the LM3017
  • CO is the output capacitor value

Solve for RCOMP with Equation 57.

Equation 57. LM3017 eq34_Rcomp_nosc66.gif

Once the compensation resistor is known, set the zero formed by the compensation capacitor and resistor to one-fourth of the crossover frequency in Equation 58.

Equation 58. LM3017 eq35_Ccomp_nosc66.gif

where

  • CCOMP is the compensation capacitor

The high-frequency capacitor CCOMP2, is chosen to cancel the zero introduced by output capacitance ESR with Equation 59.

Equation 59. LM3017 eq36_Ccomp2_nosc66.gif

For optimal transient performance, RCOMP and CCOMP might require adjustment by observing the load transient response.

For detailed explanation on how to select the right compensation components for a boost topology, see AN-1286 Compensation for the LM3478 Boost Controller (SNVA067), and AN-1994 Modeling and Design of Current Mode Control Boost Converters (SNVA408).

8.2.2.13.2 Compensation Design Example

Table 3 lists the design parameters for this application example to calculate the compensation network.

Table 3. Design Parameters

PARAMETER VALUE
Input voltage, VIN 8 V to 12 V
Output voltage, VOUT 15 V
Output current, IOUT 1 A
Switching frequency, fS 600 kHz
Duty cycle, D
(considering losses)
0.482 with VIN = 8 V
0.223 with VIN = 12 V
Right-half plane zero, fR 136.187 kHz when VIN = 8 V
206.421 kHz when VIN = 12 V
Inductor, L 4.7 µH
Output capacitance, CO (considering derating due to applied voltage) 33 µF

space

LM3017 30180945.gif
VIN = 8 V, VOUT = 15 V, IOUT = 1 A
Figure 26. Control-to-Output Transfer Function
GVC(s) Bode Plot

Choose the crossover frequency with Equation 60.

Equation 60. fC = 20 kHz = fS / 20 fR / 5

Table 4. Calculated Compensation Network Components

PARAMETER CALCULATED VALUE ACTUAL VALUE
RCOMP 3.42 kΩ 3.4 kΩ
CCOMP 9.306 nF 10 nF
CCOMP2 96.48 pF 100 pF

space

LM3017 30180953.gif
VIN = 8 V, VOUT = 15 V, IOUT = 1 A
Figure 27. GVC(s) and Compensation Network
GVA(s) Bode Plots
LM3017 30180954.gif
VIN = 8 V, VOUT = 15 V, IOUT = 1 A
Figure 28. Closed-Loop Bode Plot T(s)

Table 5. Bill of Materials (BOM) for LM3017

DESIGNATION DESCRIPTION SIZE MANUFACTURER PART # VENDOR
CIN1 Cap 22 µF, 25 V X5R 1206 GRM31CR61E226KE15L Murata
CO1,CO2, CO3 Cap 22 µF, 25 V X5R 1206 GRM31CR61E226KE15L Murata
CCOMP Cap 0.022 µF 0603 C0603C103J1RACTU Kemet
CCOMP2 Cap 1000 pF 0603 C1608C0G1H101J TDK
CBYP Cap 0.1 µF, 25 V X7R 0603 06033C104KAT2A AVX
CVCC Cap 0.47 µF, 16 V X7R 0805 C2012X7R1C474K TDK
RCOMP RES, 3.4 kΩ, 1%, 0.1W 0603 CRCW06033K40FKEA Vishay
RFBT RES, 21.5 kΩ, 1%, 0.1W 0603 CRCW060321K5FKEA Vishay
RFBB RES, 2 kΩ, 1%, 0.1W 0603 CRCW06032K00FKEA Vishay
RS RES, 100 Ω, 1%, 0.1W 0603 CRCW0603100RFKEA Vishay
RSEN RES, 0.03 Ω, 1%, 1W 1206 WSLP1206R0300FEA Vishay
Q1 NexFET™ N-CH, 25 V, 60 A, RDS(on)= 4.4 mΩ 8-SON CSD16323Q3 TI
Q2 NexFET™ N-CH, 25 V, 60 A, RDS(on)= 4.3 mΩ 8-SON CSD16340Q3 TI
D1 Diode Schottky, 30 V, 2 A SMB 20BQ030TRPBF Vishay
L1 Shielded Inductor, 4.7 µH, 2.3 A 4 mm L × 4 mm W × 1.85 mm H MPI4040R3-4R7-R Cooper
U1 LM3017 TI

8.2.3 Application Curve

LM3017 Fig29.png Figure 29. Switch Node and Output Voltage Ripple
With 5.5 VIN and 15 V at 1-A Output