SBOS944E September   2018  – February 2022 LM321LV , LM324LV , LM358LV

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: LM321LV
    5. 6.5 Thermal Information: LM358LV
    6. 6.6 Thermal Information: LM324LV
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Common-Mode Input Range Includes Ground
      3. 7.3.3 Overload Recovery
      4. 7.3.4 Electrical Overstress
      5. 7.3.5 EMI Susceptibility and Input Filtering
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. Power Supply Recommendations
    1. 9.1 Input and ESD Protection
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information: LM321LV

THERMAL METRIC(1)LM321LVUNIT
DBV (SOT-23)DCK (SC70)
5 PINS5 PINS
RθJAJunction-to-ambient thermal resistance232.9239.6°C/W
RθJC(top)Junction-to-case (top) thermal resistance153.8148.5°C/W
RθJBJunction-to-board thermal resistance100.982.3°C/W
ψJTJunction-to-top characterization parameter77.254.5°C/W
ψJBJunction-to-board characterization parameter100.481.8°C/W
For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.