SNOSD66 June   2017 LM324-N-MIL

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  8. 8  Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Non-Inverting DC Gain (0 V Input = 0 V Output)
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Other Application Circuits at V+ = 5.0 VDC
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • J|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

See (3).
MIN MAX UNIT
Supply Voltage, V+ 32 V
Differential Input Voltage 32 V
Input Voltage −0.3 32 V
Input Current (VIN < −0.3 V)(4) 50 mA
Power Dissipation(1)      PDIP 1130 mW
CDIP 1260 mW
SOIC Package 800 mW
Output Short-Circuit to GND (One Amplifier)(2) V+ ≤ 15 V and TA = 25°C Continuous
Soldering Information         Dual-In-Line Package Soldering (10 seconds) 260 °C
Small Outline Package Vapor Phase (60 seconds) 215 °C
Infrared (15 seconds) 220 °C
Storage temperature, Tstg –65 150 °C
(1) For operating at high temperatures, the LM324-N-MIL must be derated based on a 125°C maximum junction temperature and a thermal resistance of 88°C/W which applies for the device soldered in a printed circuit board, operating in a still air ambient. The dissipation is the total of all four amplifiers—use external resistors, where possible, to allow the amplifier to saturate of to reduce the power which is dissipated in the integrated circuit.
(2) Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of 15 V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(4) This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3 V (at 25°C).

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±250 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage (V+ - V-) 3 32 V
Operating Input Voltage on Input pins 0 V+ V
Operating junction temperature, TJ 0 70 °C

6.4 Thermal Information

THERMAL METRIC(1) LM324-N-MIL UNIT
D/SOIC
14 PINS
RθJA Junction-to-ambient thermal resistance 88 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

V+ = +5.0V, (1), unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input Offset Voltage TA = 25°C(2) 2 7 mV
Input Bias Current(3) IIN(+) or IIN(−), VCM = 0 V, TA = 25°C 45 250 nA
Input Offset Current IIN(+) or IIN(−), VCM = 0 V, TA = 25°C 5 50 nA
Input Common-Mode Voltage Range(4) V+ = 30 V,
TA = 25°C		 0 V+−1.5 V
Supply Current Over Full Temperature Range
RL = ∞ On All Op Amps,
V+ = 30 V		 1.5 3 mA
V+ = 5 V 0.7 1.2
Large Signal Voltage Gain V+ = 15V, RL≥ 2 kΩ,
(VO = 1 V to 11 V), TA = 25°C		 25 100 V/mV
Common-Mode Rejection Ratio DC, VCM = 0 V to V+ − 1.5 V, TA = 25°C 65 85 dB
Power Supply Rejection Ratio V+ = 5 V to 30 V, TA = 25°C 65 100 dB
Amplifier-to-Amplifier
Coupling(5)		 f = 1 kHz to 20 kHz, TA = 25°C
(Input Referred)		 −120 dB
Output Current Source VIN+ = 1 V, VIN− = 0 V,
V+ = 15 V, VO = 2 V, TA = 25°C		 20 40 mA
Sink VIN− = 1 V, VIN+ = 0 V,
V+ = 15 V, VO = 2 V, TA = 25°C		 10 20 mA
VIN− = 1 V, VIN+ = 0 V,
V+ = 15 V, VO = 200 mV, TA = 25°C		 12 50 µA
Short Circuit to Ground V+ = 15 V, TA = 25°C(2) 40 60 mA
Input Offset Voltage See (2) 9 mV
VOS Drift RS = 0 Ω 7 µV/°C
Input Offset Current IIN(+) − IIN(−), VCM = 0 V 150 nA
IOS Drift RS = 0 Ω 10 pA/°C
Input Bias Current IIN(+) or IIN(−) 40 500 nA
Input Common-Mode Voltage Range(4) V+ = 30 V 0 V+−2 V
Large Signal Voltage Gain V+ = 15 V (VOSwing = 1V to 11V),
RL ≥ 2 kΩ		 15 V/mV
Output Voltage Swing VOH V+ = 30 V RL = 2 kΩ 26 V
RL = 10 kΩ 27 28
VOL V+ = 5 V, RL = 10 kΩ 5 20 mV
Output Current Source VO = 2 V VIN+ = 1 V,
VIN− = 0 V,
V+ = 15 V		 10 20 mA
Sink VIN− = 1 V,
VIN+ = 0 V,
V+ = 15 V		 5 8 mA
(1) The LM324-N-MIL temperature specifications are limited to 0°C ≤ TA ≤ +70°C.
(2) VO ≃ 1.4V, RS = 0 Ω with V+ from 5 V to 30 V.
(3) The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines.
(4) The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V (at 25°C). The upper end of the common-mode voltage range is V+ − 1.5 V (at 25°C), but either or both inputs can go to 32 V without damage, independent of the magnitude of V+.
(5) Due to proximity of external components, insure that coupling is not originating via stray capacitance between these external parts. This typically can be detected as this type of capacitance increases at higher frequencies.

6.6 Typical Characteristics

LM324-N-MIL 929934.png Figure 1. Input Voltage Range
LM324-N-MIL 929936.png Figure 3. Supply Current
LM324-N-MIL 929938.png Figure 5. Open-Loop Frequency Response
LM324-N-MIL 929940.png Figure 7. Voltage Follower Pulse Response
LM324-N-MIL 929942.png Figure 9. Large Signal Frequency Response
LM324-N-MIL 929944.png Figure 11. Output Characteristics Current Sinking
LM324-N-MIL 929935.png Figure 2. Input Current
LM324-N-MIL 929937.png Figure 4. Voltage Gain
LM324-N-MIL 929939.png Figure 6. Common Mode Rejection Ratio
LM324-N-MIL 929941.png Figure 8. Voltage Follower Pulse Response (Small Signal)
LM324-N-MIL 929943.png Figure 10. Output Characteristics Current Sourcing
LM324-N-MIL 929945.png Figure 12. Current Limiting