SNVS628H October   2009  – December 2019 LM5060

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Up Sequence
      2. 7.4.2 Status Conditions
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Gate Control
      2. 8.1.2  Fault Timer
      3. 8.1.3  VGS Considerations
      4. 8.1.4  VDS Fault Condition
      5. 8.1.5  Overcurrent Fault
      6. 8.1.6  Restart After Overcurrent Fault Event
      7. 8.1.7  Enable
      8. 8.1.8  UVLO
      9. 8.1.9  OVP
      10. 8.1.10 Restart After OVP Event
      11. 8.1.11 nPGD Pin
    2. 8.2 Typical Applications
      1. 8.2.1 Example Number 1: LM5060EVAL Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 VDS Fault Detection and Selecting Sense Pin Resistor RS
          2. 8.2.1.2.2 Turn-On Time
          3. 8.2.1.2.3 Fault Detection Delay Time
          4. 8.2.1.2.4 MOSFET Selection
          5. 8.2.1.2.5 Input and Output Capacitors
          6. 8.2.1.2.6 UVLO, OVP
          7. 8.2.1.2.7 POWER GOOD Indicator
          8. 8.2.1.2.8 Input Bypass Capacitor
          9. 8.2.1.2.9 Large Load Capacitance
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Example Number 2: Reverse Polarity Protection With Diodes
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Application Curve
      3. 8.2.3 Example Number 3: Reverse Polarity Protection With Resistor
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
          1. 8.2.3.2.1 Reverse Polarity Protection With a Resistor
          2. 8.2.3.2.2 Fault Detection With RS and RO
        3. 8.2.3.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3 Feature Description

The LM5060 is designed to drive an external high-side N-channel MOSFET. Over-Current protection is implemented by sensing the voltage drop across the MOSFET. When an adjustable voltage drop threshold is exceeded, and an adjustable time period has elapsed, the MOSFET is disabled. OVP and UVLO monitoring of the input line is also provided. A low state on the enable pin will turn off the N-channel MOSFET and switch the LM5060 into a very low quiescent current off state. An active low POWER GOOD output pin is provided to report the status of the N-channel MOSFET. The waiting time before the MOSFET is turned off after a fault condition is detected can be adjusted with an external timer capacitor. Since the LM5060 uses a constant current source to charge the gate of the external N-channel MOSFET, the output voltage rise time can be adjusted by adding external gate capacitance. This is useful when starting up into large capacitive loads.