SNVSAG6A November   2015  – December 2015 LM5109B-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
    1. 4.1 Absolute Maximum Ratings
    2. 4.2 ESD Ratings
    3. 4.3 Recommended Operating Conditions
    4. 4.4 Thermal Information
    5. 4.5 Electrical Characteristics
    6. 4.6 Switching Characteristics
    7. 4.7 Typical Characteristics
  5. 5 Detailed Description
    1. 5.1 Overview
    2. 5.2 Functional Block Diagram
    3. 5.3 Feature Description
      1. 5.3.1 Start-up and UVLO
      2. 5.3.2 Level Shift
      3. 5.3.3 Output Stages
    4. 5.4 HS Transient Voltages Below Ground
    5. 5.5 Device Functional Modes
  6. 6 Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Application
      1. 6.2.1 Design Requirements
      2. 6.2.2 Detailed Design Procedure
        1. 6.2.2.1 Select Bootstrap and VDD Capacitor
        2. 6.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 6.2.2.3 Selecting External Gate Driver Resistor
        4. 6.2.2.4 Estimate the Driver Power Loss
      3. 6.2.3 Application Curves
  7. 7 Power Supply Recommendations
  8. 8 Layout
    1. 8.1 Layout Guidelines
    2. 8.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Community Resources
    2. 9.2 Trademarks
    3. 9.3 Electrostatic Discharge Caution
    4. 9.4 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

4.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD to VSS –0.3 18 V
HB to HS –0.3 18 V
LI or HI to VSS –0.3 VDD + 0.3 V
LO to VSS –0.3 VDD + 0.3 V
HO to VSS VHS – 0.3 VHB + 0.3 V
HS to VSS(1) –5 90 V
HB to VSS 108 V
Junction temperature –40 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

4.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) 1500 V
Charged-device model (CDM), per AEC Q100-011 750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

4.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD 8 14 V
HS(1) –1 90 V
HB VHS+8 VHS+14 V
HS Slew Rate < 50 V/ns
Junction Temperature –40 125 °C
(1) In the application, the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD – 15 V. For example, if VDD = 10 V, the negative transients at HS must not exceed –5 V.

4.4 Thermal Information

THERMAL METRIC(1) LM5109B-Q1 UNIT
NGT (WSON)
8-PINS
RθJA Junction-to-ambient thermal resistance 42.3 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.0 °C/W
RθJB Junction-to-board thermal resistance 19.3 °C/W
ψJT Junction-to-top characterization parameter 0.4 °C/W
ψJB Junction-to-board characterization parameter 19.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 8.1 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report (SPRA953).

4.5 Electrical Characteristics

TJ = 25°C (unless otherwise noted)
VDD = VHB = 12 V, VSS = VHS = 0 V, No Load on LO or HO.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply Currents
IDD VDD Quiescent Current LI = HI = 0V TJ = 25°C 0.3 mA
TJ = –40°C to 125°C 0.6
IDDO VDD Operating Current f = 500 kHz TJ = 25°C 1.8 mA
TJ = –40°C to 125°C 2.9
IHB Total HB Quiescent Current LI = HI = 0V TJ = 25°C 0.06 mA
TJ = –40°C to 125°C 0.2
IHBO Total HB Operating Current f = 500 kHz TJ = 25°C 1.4 mA
TJ = –40°C to 125°C 2.8
IHBS HB to VSS Current, Quiescent VHS = VHB = 90V TJ = 25°C 0.1 µA
TJ = –40°C to 125°C 10
IHBSO HB to VSS Current, Operating f = 500 kHz 0.5 mA
Input Pins Li and Hi
VIL Low Level Input Voltage Threshold TJ = 25°C 1.8 V
TJ = –40°C to 125°C 0.8
VIH High Level Input Voltage Threshold TJ = 25°C 1.8 V
TJ = –40°C to 125°C 2.2
RI Input Pulldown Resistance TJ = 25°C 200 kΩ
TJ = –40°C to 125°C 100 500
Under Voltage Protection
VDDR VDD Rising Threshold VDDR = VDD - VSS TJ = 25°C 6.7 V
TJ = –40°C to 125°C 6.0 7.4
VDDH VDD Threshold Hysteresis 0.5 V
VHBR HB Rising Threshold VHBR = VHB - VHS TJ = 25°C 6.6 V
TJ = –40°C to 125°C 5.7 7.1
VHBH HB Threshold Hysteresis 0.4 V
LO Gate Driver
VOLL Low-Level Output Voltage ILO = 100 mA, VOHL = VLO – VSS TJ = 25°C 0.38 V
TJ = –40°C to 125°C 0.65
VOHL High-Level Output Voltage ILO = −100 mA, VOHL = VDD– VLO TJ = 25°C 0.72 V
TJ = –40°C to 125°C 1.20
IOHL Peak Pullup Current VLO = 0V 1.0 A
IOLL Peak Pulldown Current VLO = 12V 1.0 A
HO Gate Driver
VOLH Low-Level Output Voltage IHO = 100 mA, VOLH = VHO– VHS TJ = 25°C 0.38 V
TJ = –40°C to 125°C 0.65
VOHH High-Level Output Voltage IHO = −100 mA, VOHH = VHB– VHO TJ = 25°C 0.72 V
TJ = –40°C to 125°C 1.20
IOHH Peak Pullup Current VHO = 0V 1.0 A
IOLH Peak Pulldown Current VHO = 12V 1.0 A

4.6 Switching Characteristics

TJ = 25°C (unless otherwise noted)
VDD = VHB = 12 V, VSS = VHS = 0 V, No Load on LO or HO.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tLPHL Lower Turn-Off Propagation Delay
(LI Falling to LO Falling)		 TJ = 25°C 30 ns
TJ = –40°C to 125°C 56
tHPHL Upper Turn-Off Propagation Delay
(HI Falling to HO Falling)		 TJ = 25°C 30 ns
TJ = –40°C to 125°C 56
tLPLH Lower Turn-On Propagation Delay
(LI Rising to LO Rising)		 TJ = 25°C 32 ns
TJ = –40°C to 125°C 56
tHPLH Upper Turn-On Propagation Delay
(HI Rising to HO Rising)		 TJ = 25°C 32 ns
TJ = –40°C to 125°C 56
tMON Delay Matching: Lower Turn-On and Upper Turn-Off TJ = 25°C 2 ns
TJ = –40°C to 125°C 15
tMOFF Delay Matching: Lower Turn-Off and Upper Turn-On TJ = 25°C 2 ns
TJ = –40°C to 125°C 15
tRC, tFC Either Output Rise/Fall Time CL = 1000 pF 15 ns
tPW Minimum Input Pulse Width that Changes the Output 50 ns
Figure 1. Typical Test Timing Diagram

4.7 Typical Characteristics

LM5109B-Q1 20211904.gif
Figure 2. VDD Operating Current vs Frequency
LM5109B-Q1 20211906.gif
Figure 4. Operating Current vs Temperature
LM5109B-Q1 20211908.gif
Figure 6. Quiescent Current vs Voltage
LM5109B-Q1 20211910.gif Figure 8. LO and HO High Level Output Voltage vs Temperature
LM5109B-Q1 20211914.gif Figure 10. Undervoltage Rising Thresholds vs Temperature
LM5109B-Q1 20211916.gif Figure 12. Input Thresholds vs Temperature
LM5109B-Q1 20211905.gif
VDD = VHB = 12 V VSS = VHS = 0 V
Figure 3. HB Operating Current vs Frequency
LM5109B-Q1 20211907.gif
Figure 5. Quiescent Current vs Temperature
LM5109B-Q1 20211909.gif
Figure 7. Propagation Delay vs Temperature
LM5109B-Q1 20211911.gif Figure 9. LO and HO Low Level Output Voltage vs Temperature
LM5109B-Q1 20211915.gif Figure 11. Undervoltage Hysteresis vs Temperature
LM5109B-Q1 20211917.gif Figure 13. Input Thresholds vs Supply Voltage