SNOSAV4B April   2008  – January 2016 LM7332

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 5-V Electrical Characteristics
    6. 6.6 ±5-V Electrical Characteristics
    7. 6.7 ±15-V Electrical Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Estimating the Output Voltage Swing
    4. 7.4 Device Functional Modes
      1. 7.4.1 Driving Capacitive Loads
      2. 7.4.2 Output Voltage Swing Close to V−
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Similar High Current Output Devices
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Output Short Circuit Current and Dissipation Issues
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MIN MAX UNIT
VIN differential ±10 V
Output short-circuit duration See (3)(4)
Supply voltage (VS = V+ – V−) 35 V
Voltage at input/output pins V+ + 0.3 V− − 0.3 V
Junction temperature(5) 150 °C
Soldering information  Infrared or convection (20 sec.) 235 °C
 Wave soldering (10 sec.) 260 °C
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(4) Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.
(5) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

6.3 Recommended Operating Conditions

MIN MAX UNIT
Supply voltage (VS = V+ – V−) 2.5 32 V
Temperature range(2) −40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) LM7332 UNIT
DGK (VSSOP) D (SOIC)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance (2) 161.1 109.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 55 55.8 °C/W
RθJB Junction-to-board thermal resistance 80.5 49.2 °C/W
ψJT Junction-to-top characterization parameter 5.5 10.7 °C/W
ψJB Junction-to-board characterization parameter 79.2 48.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), RθJA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.

6.5 5-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = 5 V, V− = 0 V, VCM = 0.5 V, VO = 2.5 V, and RL > 1 MΩ to 2.5 V.(1)
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
VOS Input offset voltage VCM = 0.5 V and VCM = 4.5 V −4 ±1.6 4 mV
At the temperature extremes –5 5
TC VOS Input offset voltage temperature drift VCM = 0.5 V and VCM = 4.5 V (4) ±2 µV/°C
IB Input bias current See (5) −2 ±1 2 µA
At the temperature extremes −2.5 2.5
IOS Input offset current 20 250 nA
At the temperature extremes 300
CMRR Common-mode Rejection Ratio 0 V ≤ VCM ≤ 3 V 67 80 dB
At the temperature extremes 65
0 V ≤ VCM ≤ 5 V 62 70
At the temperature extremes 60
PSRR Power supply Rejection Ratio 5 V ≤ V+ ≤ 30 V 78 100 dB
At the temperature extremes 74
CMVR Input common-mode Voltage Range CMRR > 50 dB 5.1 −0.3 −0.1 V
5.3 0
At the temperature extremes 5
AVOL Large signal Voltage Gain 0.5 V ≤ VO ≤ 4.5 V
RL = 10 kΩ to 2.5 V		 70 77 dB
At the temperature extremes 65
VO Output swing
high		 RL = 10 kΩ to 2.5 V
VID = 100 mV		 60 150 mV from either rail
At the temperature extremes 200
RL = 2 kΩ to 2.5 V
VID = 100 mV		 100 300
At the temperature extremes 350
Output swing
low		 RL = 10 kΩ to 2.5 V
VID = −100 mV		 5 150
At the temperature extremes 200
RL = 2 kΩ to 2.5 V
VID = −100 mV		 20 300
At the temperature extremes 350
ISC Output short circuit current Sourcing from V+, VID = 200 mV(6) 60 90 mA
Sinking to V−, VID = –200 mV(6) 60 90
IOUT Output current VID = ±200 mV, VO = 1 V from rails ±55 mA
IS Total supply current No Load, VCM = 0.5 V 1.5 2.3 mA
At the temperature extremes 2.6
SR Slew rate(7) AV = +1, VI = 5-V Step, RL = 1 MΩ,
CL = 10 pF		 12 V/µs
fu Unity-gain frequency RL = 10 MΩ, CL = 20 pF 7.5 MHz
GBWP Gain bandwidth product f = 50 kHz 19.3 MHz
en Input-referred voltage noise f = 2 kHz 14.8 nV/√HZ
in Input-referred current noise f = 2 kHz 1.35 pA/√HZ
THD+N Total harmonic distortion + noise AV = +2, RL = 100 kΩ, f = 1 kHz,
VO = 4 VPP		 −84 dB
CT Rej. Crosstalk rejection f = 3 MHz, Driver RL = 10 kΩ 68 dB
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are ensured by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing in the device.
(6) Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.
(7) Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.

6.6 ±5-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +5 V, V− = −5 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ to 0 V.(1)
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
VOS Input offset voltage VCM = −4.5 V and VCM = 4.5 V −4 ±1.6 4 mV
At the temperature extremes −5 5
TC VOS Input offset voltage temperature drift VCM = −4.5 V and VCM = 4.5 V (4) ±2 µV/°C
IB Input bias current See (5) −2 ±1 2 µA
At the temperature extremes −2.5 2.5
IOS Input offset current 20 250 nA
At the temperature extremes 300
CMRR Common-mode rejection ratio −5 V ≤ VCM ≤ 3 V 74 88 dB
At the temperature extremes 75
−5 V ≤ VCM ≤ 5 V 70 74
At the temperature extremes 65
PSRR Power supply rejection ration 5 V ≤ V+ ≤ 30 V, VCM = −4.5 V 78 100 dB
At the temperature extremes 74
CMVR Input common-mode voltage range CMRR > 50 dB 5.1 –5.3 –5.1 V
At the temperature extremes 5 5.3 –5.1
AVOL Large signal voltage gain −4 V ≤ VO ≤ 4 V
RL = 10 kΩ to 0 V		 72 80 dB
At the temperature extremes 70
VO Output swing
high		 RL = 10 kΩ to 0 V
VID = 100 mV		 75 250 mV from either rail
At the temperature extremes 300
RL = 2 kΩ to 0 V
VID = 100 mV		 125 350
At the temperature extremes 400
Output swing
low		 RL = 10 kΩ to 0 V
VID = −100 mV		 10 250
At the temperature extremes 300
RL = 2 kΩ to 0V
VID = −100 mV		 30 350
At the temperature extremes 400
ISC Output short circuit current Sourcing from V+, VID = 200 mV (6) 90 120 mA
Sinking to V−, VID = −200 mV (6) 90 100
IOUT Output current VID = ±200 mV, VO = 1 V from rails ±65 mA
IS Total supply current No Load, VCM = −4.5 V 1.5 2.4 mA
At the temperature extremes 2.6
SR Slew rate(7) AV = +1, VI = 8-V step, RL = 1 MΩ,
CL = 10 pF		 13.2 V/µs
ROUT Close-loop output resistance AV = +1, f = 100 kHz 3 Ω
fu Unity-gain frequency RL = 10 MΩ, CL = 20 pF 7.9 MHz
GBWP Gain bandwidth product f = 50 kHz 19.9 MHz
en Input-referred voltage noise f = 2 kHz 14.7 nV/√HZ
in Input-referred current noise f = 2 kHz 1.3 pA/√HZ
THD+N Total harmonic distortion + noise AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 8 VPP		 −87 dB
CT Rej. Crosstalk rejection f = 3 MHz, driver RL = 10 kΩ 68 dB
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are ensured by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing in the device.
(6) Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5 ms.
(7) Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.

6.7 ±15-V Electrical Characteristics

Unless otherwise specified, all limits are ensured for TA = 25°C, V+ = +15 V, V− = −15 V, VCM = 0 V, VO = 0 V, and RL > 1 MΩ to 0 V.(1)
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
VOS Input offset voltage VCM = −14.5 V and VCM = 14.5 V −5 ±2 5 mV
At the temperature extremes −6 6
TC VOS Input offset voltage temperature drift VCM = −14.5 V and VCM = 14.5 V
(4)		 ±2 µV/°C
IB Input bias current See (5) −2 ±1 2 µA
At the temperature extremes −2.5 2.5
IOS Input offset current 20 250 nA
At the temperature extremes 300
CMRR Common-mode rejection ratio −15 V ≤ VCM ≤ 12 V 74 88 dB
At the temperature extremes 74
−15 V ≤ VCM ≤ 15 V 72 80
At the temperature extremes 72
PSRR Power supply rejection ratio −10 V ≤ V+ ≤ 15 V, VCM = −14.5 V 78 100 dB
At the temperature extremes 74
CMVR Input common-mode voltage range CMRR > 50 dB 15.1 −15.3 −15.1 V
15.3 −15
At the temperature extremes 15
AVOL Large signal voltage gain −14 V ≤ VO ≤ 14 V
RL = 10 kΩ to 0 V		 72 80 dB
At the temperature extremes 70
VO Output swing
high		 RL = 10 kΩ to 0 V
VID = 100 mV		 100 350 mV from either rail
At the temperature extremes 400
RL = 2 kΩ to 0 V
VID = 100 mV		 200 550
At the temperature extremes 600
Output swing
low		 RL = 10 kΩ to 0 V
VID = −100 mV		 20 450
At the temperature extremes 500
RL = 2 kΩ to 0 V
VID = −100 mV		 25 550
At the temperature extremes 600
ISC Output short circuit current Sourcing from V+, VID = 200 mV(6) 140 mA
Sinking to V−, VID = −200 mV (6) 140
IOUT Output current VID = ±200 mV, VO = 1 V from rails ±70 mA
IS Total supply current No Load, VCM = −14.5 V 2 2.5 mA
At the temperature extremes 3
SR Slew rate(7) AV = +1, VI = 20-V Step, RL = 1 MΩ,
CL = 10 pF		 15.2 V/µs
fu Unity-gain frequency RL = 10 MΩ, CL = 20 pF 9 MHz
GBWP Gain bandwidth product f = 50 kHz 21 MHz
en Input-referred voltage noise f = 2 kHz 15.5 nV/√HZ
in Input-referred current noise f = 2 kHz 1 pA/√HZ
THD+N Total harmonic distortion plus noise AV = +2, RL = 100 kΩ, f = 1 kHz
VO = 25 VPP		 −93 dB
CT Rej. Crosstalk rejection f = 3 MHz, Driver RL = 10 kΩ 68 dB
(1) Electrical Characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
(2) All limits are ensured by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Offset voltage temperature drift determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing in the device.
(6) Short-circuit test is a momentary test. Output short circuit duration is infinite for VS ≤ 6 V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5 ms.
(7) Slew rate is the slower of the rising and falling slew rates. Connected as a voltage follower.

6.8 Typical Characteristics

Unless otherwise specified, TA = 25°C.
LM7332 20187551.gif Figure 1. VOS Distribution
LM7332 20187504.gif Figure 3. VOS vs VCM (Unit 2)
LM7332 20187506.gif Figure 5. VOS vs VCM (Unit 1)
LM7332 20187508.gif Figure 7. VOS vs VCM (Unit 3)
LM7332 20187525.gif Figure 9. VOS vs VS (Unit 2)
LM7332 20187528.gif Figure 11. IBIAS vs VCM
LM7332 20187514.gif Figure 13. IS vs VCM
LM7332 20187516.gif Figure 15. IS vs VCM
LM7332 20187513.gif Figure 17. IS vs Supply Voltage
LM7332 20187531.gif Figure 19. Output Swing vs Sinking Current
LM7332 20187518.gif Figure 21. Output Swing vs Sourcing Current
LM7332 20187519.gif Figure 23. Positive Output Swing vs Supply Voltage
LM7332 20187521.gif Figure 25. Negative Output Swing vs Supply Voltage
LM7332 20187541.gif Figure 27. Open-Loop Frequency Response With
Various Capacitive Loads
LM7332 20187539.gif Figure 29. Open-Loop Frequency Response vs
With Various Resistive Loads
LM7332 20187538.gif Figure 31. Open-Loop Frequency Response at Various Temperatures
LM7332 20187544.gif Figure 33. Phase Margin vs Capacitive Load
LM7332 20187546.gif Figure 35. +PSRR vs Frequency
LM7332 20187533.gif Figure 37. Step Response for Various Amplitudes
LM7332 20187534.gif Figure 39. Large Signal Step Response for Various Capacitive Loads
LM7332 20187549.gif Figure 41. Input-Referred Noise Density vs Frequency
LM7332 20187552.gif Figure 43. THD+N vs Output Amplitude (VPP)
LM7332 20187554.gif Figure 45. THD+N vs Output Amplitude (VPP)
LM7332 20187503.gif Figure 2. VOS vs VCM (Unit 1)
LM7332 20187505.gif Figure 4. VOS vs VCM (Unit 3)
LM7332 20187507.gif Figure 6. VOS vs VCM (Unit 2)
LM7332 20187524.gif Figure 8. VOS vs VS (Unit 1)
LM7332 20187526.gif Figure 10. VOS vs VS (Unit 3)
LM7332 20187527.gif Figure 12. IBIAS vs Supply Voltage
LM7332 20187515.gif Figure 14. IS vs VCM
LM7332 20187512.gif Figure 16. IS vs Supply Voltage
LM7332 20187530.gif Figure 18. Output Swing vs Sinking Current
LM7332 20187517.gif Figure 20. Output Swing vs Sourcing Current
LM7332 20187522.gif Figure 22. Positive Output Swing vs Supply Voltage
LM7332 20187520.gif Figure 24. Negative Output Swing vs Supply Voltage
LM7332 20187540.gif Figure 26. Open-Loop Frequency Response With
Various Capacitive Loads
LM7332 20187542.gif Figure 28. Open-Loop Frequency Response With
Various Capacitive Loads
LM7332 20187537.gif Figure 30. Open-Loop Frequency Response vs
With Various Supply Voltages
LM7332 20187543.gif Figure 32. Phase Margin vs Capacitive Load
LM7332 20187545.gif Figure 34. CMRR vs Frequency
LM7332 20187547.gif Figure 36. −PSRR vs Frequency
LM7332 20187532.gif Figure 38. Step Response for Various Amplitudes
LM7332 20187548.gif Figure 40. Input-Referred Noise Density vs Frequency
LM7332 20187550.gif Figure 42. Input-Referred Noise Density vs Frequency
LM7332 20187553.gif Figure 44. THD+N vs Output Amplitude (VPP)
LM7332 20187536.gif Figure 46. Crosstalk vs Frequency