SNVS754N January   2000  – April 2026 LM78L

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Electrical Characteristics: LM78L33 (New Chip Only)
    6. 5.6  Electrical Characteristics: LM78L05 (Legacy and New Chip)
    7. 5.7  Electrical Characteristics: LM78L06 (New Chip Only)
    8. 5.8  Electrical Characteristics: LM78L09 (Legacy Chip Only)
    9. 5.9  Electrical Characteristics: LM78L12 (Legacy and New Chip)
    10. 5.10 Electrical Characteristics: LM78L15 (Legacy and New Chip)
    11. 5.11 Electrical Characteristics: LM78L62 (Legacy Chip Only)
    12. 5.12 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Load Regulation
      2. 6.3.2 Protection
      3. 6.3.3 Current Limit
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Dropout Operation
      3. 6.4.3 Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Capacitor
        2. 7.2.2.2 Output Capacitor
        3. 7.2.2.3 Power Dissipation (PD)
        4. 7.2.2.4 Estimating Junction Temperature
        5. 7.2.2.5 Overload Recovery
        6. 7.2.2.6 Reverse Current
        7. 7.2.2.7 Polarity Reversal Protection
      3. 7.2.3 Application Curve
      4. 7.2.4 Other Application Circuits
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Evaluation Module
      2. 8.1.2 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.2.2.6 Reverse Current

Excessive reverse current can damage this device. Reverse current flows through the emitter-base junction of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current can occur are outlined in this section. These conditions are:

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, use external protection to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated. Limit reverse current to 5% or less of the rated output current of the device in the event this current cannot be avoided.

Figure 7-2 shows one approach for protecting the device.

LM78L Example Circuit for Reverse Current Protection Using a Schottky Diode Figure 7-2 Example Circuit for Reverse Current Protection Using a Schottky Diode