SNOS753F August   1999  – January 2025 LMC7111

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics for VS = 2.7V or ±1.35V
    6. 5.6  Electrical Characteristics for VS = 5V or ±2.5V
    7. 5.7  Electrical Characteristics for VS = 10V or ±5V
    8. 5.8  Typical Characteristics
    9. 5.9  Typical Characteristics: 2.7V
    10. 5.10 Typical Characteristics: 3V
    11. 5.11 Typical Characteristics: 5V
    12. 5.12 Typical Characteristics: 10V
  7. 6 Detailed Description
    1. 6.1 Feature Description
      1. 6.1.1 Benefits of the LMC7111 Tiny Amp
        1. 6.1.1.1 Size
        2. 6.1.1.2 Height
        3. 6.1.1.3 Signal Integrity
        4. 6.1.1.4 Simplified Board Layout
        5. 6.1.1.5 Low Supply Current
        6. 6.1.1.6 Wide Voltage Range
      2. 6.1.2 Input Common-Mode Voltage Range
      3. 6.1.3 Output Swing
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Capacitive Load Tolerance
      2. 7.1.2 Compensating for Input Capacitance When Using Large-Value Feedback Resistors
      3. 7.1.3 Dual and Quad Devices With Similar Performance
    2. 7.2 Typical Application
      1. 7.2.1 Biasing GaAs RF Amplifiers
      2. 7.2.2 Reference Buffer for Analog-to-Digital Converters
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Spice Macromodel
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBV|5
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Electrostatic Discharge Caution

LMC7111 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.