SNOSAK0I December   2004  – January 2015 LMH6550

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Typical Application Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: ±5 V
    6. 7.6 Electrical Characteristics: 5 V
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical Fully Differential Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Fully Differential Operation
          2. 9.2.1.2.2 Capacitive Drive
          3. 9.2.1.2.3 Application Curves
      2. 9.2.2 Driving Analog-to-Digital Converters
      3. 9.2.3 Single-Ended Input to Differential Output
      4. 9.2.4 Single Supply Operation
      5. 9.2.5 Using Transformers
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation
    4. 11.4 ESD Protection
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)(2)(3)

MIN MAX UNIT
Supply Voltage 13.2 V
Common-Mode Input Voltage ±VS V
Maximum Input Current (pins 1, 2, 7, 8) 30 mA
Maximum Output Current (pins 4, 5)  (4)
Maximum Junction Temperature 150 °C
Storage Temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) For Soldering Information, see Product Folder at www.ti.com and SNOA549.
(4) The maximum output current (IOUT) is determined by device power dissipation limitations.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge(2) Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model (MM) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human body model: 1.5 kΩ in series with 100 pF. Machine model: 0 Ω in series with 200 pF.

7.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Operating Temperature −40 85 °C
Total Supply Voltage 4.5 12 V

7.4 Thermal Information

THERMAL METRIC(1) LMH6550 UNIT
D DGK
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance (2) 150 235 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is P D= (TJ(MAX) — TA)/ θJA. All numbers apply for package soldered directly into a 2 layer PC board with zero air flow.

7.5 Electrical Characteristics: ±5 V(1)

Single-ended in differential out, TA = 25°C, VS = ±5 V, VCM = 0 V, RF = RG = 365 Ω, RL = 500 Ω; unless specified.
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
AC PERFORMANCE (DIFFERENTIAL)
SSBW Small Signal −3 dB Bandwidth VOUT = 0.5 VPP 400 MHz
LSBW Large Signal −3 dB Bandwidth VOUT = 2 VPP 380 MHz
Large Signal −3 dB Bandwidth VOUT = 4 VPP 320 MHz
0.1 dB Bandwidth VOUT = 0.5 VPP 90 MHz
Slew Rate 4-V Step (4) 2000 3000 V/μs
Rise/Fall Time 2-V Step 1 ns
Settling Time 2-V Step, 0.1% 8 ns
VCM PIN AC PERFORMANCE (COMMON-MODE FEEDBACK AMPLIFIER)
Common-Mode Small Signal Bandwidth VCM Bypass Capacitor Removed 210 MHz
Slew Rate VCM Bypass Capacitor Removed 200 V/µs
DISTORTION AND NOISE RESPONSE
HD2 2nd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL = 800 Ω −92 dBc
VO = 2 VPP, f = 20 MHz, RL = 800 Ω −78
VO = 2 VPP, f = 70 MHz, RL = 800 Ω −59
HD3 3rd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL = 800 Ω −103 dBc
VO = 2 VPP, f = 20 MHz, RL = 800 Ω −88
VO = 2 VPP, f = 70 MHz, RL = 800 Ω −50
en Input Referred Voltage Noise f ≥ 1 MHz 6.0 nV/√Hz
in Input Referred Noise Current f ≥ 1 MHz 1.5 pA/√Hz
INPUT CHARACTERISTICS (DIFFERENTIAL)
VOSD Input Offset Voltage Differential Mode, VID = 0, VCM = 0 1 ±4 mV
At extreme temperatures ±6
Input Offset Voltage Average Temperature Drift  (5) 1.6 µV/°C
IBI Input Bias Current  (6) 0 -8 −16 µA
Input Bias Current Average Temperature Drift  (5) 9.6 nA/°C
Input Bias Difference Difference in Bias Currents Between the Two Inputs 0.3 µA
CMRR Common-Mode Rejection Ratio DC, VCM = 0 V, VID = 0 V 72 82 dBc
RIN Input Resistance Differential 5 MΩ
CIN Input Capacitance Differential 1 pF
CMVR Input Common-Mode Voltage Range CMRR > 53 dB +3.1
−4.6		 +3.2
−4.7		 V
VCM PIN INPUT CHARACTERISTICS (COMMON-MODE FEEDBACK AMPLIFIER)
VOSC Input Offset Voltage Common Mode, VID = 0 1 ±5 mV
At extreme temperatures ±8
Input Offset Voltage Average Temperature Drift  (5) 25 µV/°C
Input Bias Current  (6) −2 μA
VCM CMRR VID = 0 V, 1-V Step on VCM Pin, Measure VOD 70 75 dB
Input Resistance 25 kΩ
Common-Mode Gain ΔVO,CM/ΔVCM 0.995 0.997 1.005 V/V
OUTPUT PERFORMANCE
Output Voltage Swing Peak to Peak, Differential 7.38 7.8 V
At extreme temperatures 7.18
Output Common-Mode Voltage Range VID = 0 V, ±3.69 ±3.8 V
IOUT Linear Output Current VOUT = 0 V ±63 ±75 mA
ISC Short Circuit Current Output Shorted to Ground
VIN = 3 V Single-Ended (7)		 ±200 mA
Output Balance Error ΔVOUT Common Mode /ΔVOUT Differential, VOUT = 1 VPP Differential, f = 10 MHz −68 dB
MISCELLANEOUS PERFORMANCE
Enable Voltage Threshold Pin 7 2.0 V
Disable Voltage Threshold Pin 7 1.5 V
Enable Pin Current VEN =0 V (6) -250 µA
VEN =4 V (6) 55
Enable/Disable Time 10 ns
AVOL Open Loop Gain Differential 70 dB
PSRR Power Supply Rejection Ratio DC, ΔVS = ±1 V 74 90 dB
Supply Current RL = ∞ 18 20 24 mA
At extreme temperatures 27
Disabled Supply Current 1 1.2 mA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods.
(3) Typical numbers are the most likely parametric norm.
(4) Slew Rate is the average of the rising and falling edges.
(5) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(6) Negative input current implies current flowing out of the device.
(7) The maximum output current (IOUT) is determined by device power dissipation limitations.

7.6 Electrical Characteristics: 5 V(1)

Single-ended in differential out, TA = 25°C, AV = +1, VS = 5 V, VCM = 2.5 V, RF = RG = 365 Ω, RL = 500 Ω; unless specified.
PARAMETER TEST CONDITIONS MIN (2) TYP (3) MAX (2) UNIT
SSBW Small Signal −3 dB Bandwidth RL = 500 Ω, VOUT = 0.5 VPP 350 MHz
LSBW Large Signal −3 dB Bandwidth RL = 500 Ω, VOUT = 2 VPP 330 MHz
0.1 dB Bandwidth 60 MHz
Slew Rate 2-V Step (4) 1500 V/μs
Rise/Fall Time, 10% to 90% 1-V Step 1 ns
Settling Time 1-V Step, 0.05% 12 ns
VCM PIN AC PERFORMANCE (COMMON-MODE FEEDBACK AMPLIFIER)
Common-Mode Small Signal Bandwidth 185 MHz
Slew Rate 180 V/μs
DISTORTION AND NOISE RESPONSE
HD2 2nd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL = 800 Ω −89 dBc
VO = 2 VPP, f = 20 MHz, RL = 800 Ω −88
HD3 3rd Harmonic Distortion VO = 2 VPP, f = 5 MHz, RL = 800 Ω −85 dBc
VO = 2 VPP, f = 20 MHz, RL = 800 Ω −70
en Input Referred Noise Voltage f ≥ 1 MHz 6.0 nV/√Hz
in Input Referred Noise Current f ≥ 1 MHz 1.5 pA/√Hz
INPUT CHARACTERISTICS (DIFFERENTIAL)
VOSD Input Offset Voltage Differential Mode, VID = 0, VCM = 0 1 ±4 mV
At extreme temperatures ±6
Input Offset Voltage Average Temperature Drift  (5) 1.6 µV/°C
IBIAS Input Bias Current  (6) 0 −8 −16 μA
Input Bias Current Average Temperature Drift  (5) 9.5 nA/°C
Input Bias Current Difference Difference in Bias Currents Between the Two Inputs 0.3 µA
CMRR Common-Mode Rejection Ratio DC, VID = 0 V 70 80 dBc
Input Resistance Differential 5 MΩ
Input Capacitance Differential 1 pF
VICM Input Common-Mode Range CMRR > 53 dB +3.1
+0.4		 +3.2
+0.3
VCM PIN INPUT CHARACTERISTICS (COMMON-MODE FEEDBACK AMPLIFIER)
Input Offset Voltage Common-Mode, VID = 0 1 ±5 mV
At extreme temperatures ±8
Input Offset Voltage Average Temperature Drift 18.6 µV/°C
Input Bias Current 3 μA
VCM CMRR VID = 0,
1-V Step on VCM Pin, Measure VOD		 70 75 dB
Input Resistance VCM Pin to Ground 25 kΩ
Common-Mode Gain ΔVO,CM/ΔVCM 0.991 V/V
OUTPUT PERFORMANCE
VOUT Output Voltage Swing Peak to Peak, Differential,
VS = ±2.5 V, VCM = 0 V		 2.4 2.8 V
IOUT Linear Output Current VOUT = 0-V Differential ±54 ±70 mA
ISC Output Short Circuit Current Output Shorted to Ground
VIN = 3 V Single-Ended (7)		 250 mA
CMVR Common-Mode Voltage Range VID = 0, VCM Pin = 1.2 V and 3.8 V 3.72
1.23		 3.8
1.2		 V
Output Balance Error ΔVOUT Common Mode /ΔVOUT DIfferential, VOUT = 1 VPP Differential, f = 10 MHz −65 dB
MISCELLANEOUS PERFORMANCE
Enable Voltage Threshold Pin 7 2.0 V
Disable Voltage Threshold Pin 7 1.5 V
Enable Pin Current VEN =0 V (6) -250 µA
VEN =4 V (6) 55
Enable/Disable Time 10 ns
Open Loop Gain DC, Differential 70 dB
PSRR Power Supply Rejection Ratio DC, ΔVS = ±0.5 V 72 77 dB
IS Supply Current RL = ∞ 16.5 19 23.5 mA
At extreme temperatures 26.5
ISD Disabled Supply Current 1 1.2 mA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control (SQC) methods.
(3) Typical numbers are the most likely parametric norm.
(4) Slew Rate is the average of the rising and falling edges.
(5) Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(6) Negative input current implies current flowing out of the device.
(7) The maximum output current (IOUT) is determined by device power dissipation limitations.

7.7 Typical Characteristics

(TA = 25°C, VS = ±5 V, RL = 500 Ω, RF = RG = 365 Ω; unless specified).
20130114.gifFigure 1. Frequency Response vs Supply Voltage
20130116.gifFigure 3. Frequency Response vs VOUT
20130121.gifFigure 5. Frequency Response vs Capacitive Load
20130127.gifFigure 7. 2 VPP Pulse Response Single-Ended Input
20130124.gifFigure 9. Output Common-Mode Pulse Response
20130129.gifFigure 11. Distortion vs Frequency Single-Ended Input
20130131.gifFigure 13. Minimum VOUT vs IOUT
20130118.gifFigure 15. Closed-Loop Output Impedance
20130120.gifFigure 17. PSRR
20130113.gifFigure 19. Balance Error
20130115.gifFigure 2. Frequency Response
20130134.gifFigure 4. Frequency Response vs Gain
20130122.gifFigure 6. Suggested ROUT vs Cap Load
20130125.gifFigure 8. Large Signal Pulse Response
20130128.gifFigure 10. Distortion vs Frequency Single-Ended Input
20130130.gifFigure 12. Maximum VOUT vs IOUT
20130117.gifFigure 14. Closed-Loop Output Impedance
20130119.gifFigure 16. PSRR
20130133.gifFigure 18. CMRR
20130135.gifFigure 20. Third-Order Intermodulation Products vs VOUT