SNOSC61C January   2012  – September 2014 LMH6642Q-Q1 , LMH6643Q-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 3V Electrical Characteristics
    6. 7.6 5V Electrical Characteristics
    7. 7.7 ±5V Electrical Characteristics
    8. 7.8 Typical Performance Characteristics
  8. Application and Implementation
    1. 8.1 Circuit Description
      1. 8.1.1 Application Hints
      2. 8.1.2 Input and Output Topology
    2. 8.2 Single Supply, Low Power Photodiode Amplifier
    3. 8.3 Printed Circuit Board Layout and Component Values Section
  9. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Related Links
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7 Specifications

7.1 Absolute Maximum Ratings(1)(4)(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Differential ±2.5 V
Output Short Circuit Duration See (2) and (5)
Supply Voltage (V+ - V) 13.5 V
Voltage at Input/Output pins V+ +0.8
V −0.8
V
Input Current ±10 mA
Junction Temperature (3) +150 °C
Soldering Information  
Infrared or Convection Reflow (20 sec) 235 °C
Wave Soldering Lead Temp.(10 sec) 260 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C.
(3) The maximum power dissipation is a function of TJ(MAX),R θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/R θJA. All numbers apply for packages soldered directly onto a PC board.
(4) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(5) Output short circuit duration is infinite for VS < 6 V at room temperature and below. For VS > 6 V, allowable short circuit duration is 1.5ms.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range −65 +150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) 2000 V
Machine Model (MM)(2) 200
Charged Device Model (CDM), per AEC Q100-011 1000
(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification,1.5kΩ in series with 100pF.
(2) Machine Model, 0Ω in series with 200pF.

7.3 Recommended Operating Conditions(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply Voltage (V+ – V) 2.7 10 V
Operating Temperature Range(2) −40 +85 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) The maximum power dissipation is a function of TJ(MAX),RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) - TA)/RθJA. All numbers apply for packages soldered directly onto a PC board.

7.4 Thermal Information

THERMAL METRIC(1) DBV05A
DGK08A
UNIT
5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance(2) 265°C/W 235°C/W °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 3V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 3V, V = 0V, VCM = VO = V+/2, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(2) TYP(1) MAX(2) UNIT
BW −3dB BW AV = +1, VOUT = 200mVPP 80 115 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
RL = 402Ω, VOUT = 200mVPP
19 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 1VPP 40 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = −1,
RL = 100Ω to V+/2
−48 dBc
DG Differential Gain VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2
0.17%
RL =1kΩ to V+/2 0.03%
DP Differential Phase VCM = 1V, NTSC, AV = +2
RL =150Ω to V+/2
0.05 deg
RL =1kΩ to V+/2 0.03
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68 ns
SR Slew Rate(6) AV = −1, VI = 2VPP 90 120 V/µs
VOS Input Offset Voltage For LMH6642 ±1 ±5
±7
mV
For LMH6643 ±1 ±3.4
±7
TC VOS Input Offset Average Drift  (4) ±5 µV/°C
IB Input Bias Current  (3) −1.50 −2.60
−3.25
µA
IOS Input Offset Current 20 800
1000
nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −0.5 −0.2
−0.1
V
1.8
1.6
2.0
CMRR Common Mode Rejection Ratio VCM Stepped from 0V to 1.5V 72 95 dB
AVOL Large Signal Voltage Gain VO = 0.5V to 2.5V
RL = 2kΩ to V+/2
80
75
96 dB
VO = 0.5V to 2.5V
RL = 150Ω to V+/2
74
70
82
VO Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV 2.90 2.98 V
RL = 150Ω to V+/2, VID = 200mV 2.80 2.93
Output Swing
Low
RL = 2kΩ to V+/2, VID = −200mV 25 75 mV
RL = 150Ω to V+/2, VID = −200mV 75 150
ISC Output Short Circuit Current Sourcing to V+/2
VID = 200mV (5)
50
35
95 mA
Sinking to V+/2
VID = −200mV (5)
55
40
110
IOUT Output Current VOUT = 0.5V from either supply ±65 mA
+PSRR Positive Power Supply Rejection Ratio V+ = 3.0V to 3.5V, VCM = 1.5V 75 85 dB
IS Supply Current (per channel) No Load 2.70 4.00
4.50
mA
(1) Typical values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Positive current corresponds to current flowing into the device.
(4) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(5) Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(6) Slew rate is the average of the rising and falling slew rates.

7.6 5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 5V, V = 0V, VCM = VO = V+/2, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to V+/2. Boldface limits apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(2) TYP(1) MAX(2) UNIT
BW −3dB BW AV = +1, VOUT = 200mVPP 90 120 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
Rf = 402Ω, VOUT = 200mVPP
15 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 2VPP 22 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2 −60 dBc
DG Differential Gain NTSC, AV = +2
RL =150Ω to V+/2
0.16%
RL = 1kΩ to V+/2 0.05%
DP Differential Phase NTSC, AV = +2
RL = 150Ω to V+/2
0.05 deg
RL = 1kΩ to V+/2 0.01
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load 68 ns
SR Slew Rate (3) AV = −1, VI = 2VPP 95 125 V/µs
VOS Input Offset Voltage For LMH6642 ±1 ±5
±7
mV
For LMH6643 ±1 ±3.4
±7
TC VOS Input Offset Average Drift  (5) ±5 µV/°C
IB Input Bias Current  (6) −1.70 −2.60
−3.25
µA
IOS Input Offset Current 20 800
1000
nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −0.5 −0.2
−0.1
V
3.8
3.6
4.0
CMRR Common Mode Rejection Ratio VCM Stepped from 0V to 3.5V 72 95 dB
AVOL Large Signal Voltage Gain VO = 0.5V to 4.50V
RL = 2kΩ to V+/2
86
82
98 dB
VO = 0.5V to 4.25V
RL = 150Ω to V+/2
76
72
82
VO Output Swing
High
RL = 2kΩ to V+/2, VID = 200mV 4.90 4.98 V
RL = 150Ω to V+/2, VID = 200mV 4.65 4.90
Output Swing
Low
RL = 2kΩ to V+/2, VID = −200mV 25 100 mV
RL = 150Ω to V+/2, VID = −200mV 100 150
ISC Output Short Circuit Current Sourcing to V+/2
VID = 200mV (4)
55
40
115 mA
Sinking to V+/2
VID = −200mV (4)
70
55
140
IOUT Output Current VO = 0.5V from either supply ±70 mA
+PSRR Positive Power Supply Rejection Ratio V+ = 4.0V to 6V 79 90 dB
IS Supply Current (per channel) No Load 2.70 4.25
5.00
mA
(1) Typical values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(5) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(6) Positive current corresponds to current flowing into the device.

7.7 ±5V Electrical Characteristics

Unless otherwise specified, all limits ensured for V+ = 5V, V = −5V, VCM = VO = 0V, VID (input differential voltage) as noted (where applicable) and RL = 2kΩ to ground. Boldface limits apply at the temperature extremes.
PARAMETER TEST CONDITIONS MIN(2) TYP(1) MAX(2) UNIT
BW −3dB BW AV = +1, VOUT = 200mVPP 95 130 MHz
AV = +2, −1, VOUT = 200mVPP 46
BW0.1dB 0.1dB Gain Flatness AV = +2, RL = 150Ω to V+/2,
Rf = 806Ω, VOUT = 200mVPP
12 MHz
PBW Full Power Bandwidth AV = +1, −1dB, VOUT = 2VPP 24 MHz
en Input-Referred Voltage Noise f = 100kHz 17 nV/√Hz
f = 1kHz 48
in Input-Referred Current Noise f = 100kHz 0.90 pA/√Hz
f = 1kHz 3.3
THD Total Harmonic Distortion f = 5MHz, VO = 2VPP, AV = +2 −62 dBc
DG Differential Gain NTSC, AV = +2
RL = 150Ω to V+/2
0.15%
RL = 1kΩ to V+/2 0.01%
DP Differential Phase NTSC, AV = +2
RL = 150Ω to V+/2
0.04 deg
RL = 1kΩ to V+/2 0.01
CT Rej. Cross-Talk Rejection f = 5MHz, Receiver:
Rf = Rg = 510Ω, AV = +2
47 dB
TS Settling Time VO = 2VPP, ±0.1%, 8pF Load,
VS = 5V
68 ns
SR Slew Rate (3) AV = −1, VI = 2VPP 100 135 V/µs
VOS Input Offset Voltage For LMH6642 ±1 ±5
±7
mV
For LMH6643 ±1 ±3.4
±7
TC VOS Input Offset Average Drift  (5) ±5 µV/°C
IB Input Bias Current  (6) −1.60 −2.60
−3.25
µA
IOS Input Offset Current 20 800
1000
nA
RIN Common Mode Input Resistance 3
CIN Common Mode Input Capacitance 2 pF
CMVR Input Common-Mode Voltage Range CMRR ≥ 50dB −5.5 −5.2
−5.1
V
3.8
3.6
4.0
CMRR Common Mode Rejection Ratio VCM Stepped from −5V to 3.5V 74 95 dB
AVOL Large Signal Voltage Gain VO = −4.5V to 4.5V,
RL = 2kΩ
88
84
96 dB
VO = −4.0V to 4.0V,
RL = 150Ω
78
74
82
VO Output Swing
High
RL = 2kΩ, VID = 200mV 4.90 4.96 V
RL = 150Ω, VID = 200mV 4.65 4.80
Output Swing
Low
RL = 2kΩ, VID = −200mV −4.96 −4.90 V
RL = 150Ω, VID = −200mV −4.80 −4.65
ISC Output Short Circuit Current Sourcing to Ground
VID = 200mV (4)
60
35
115 mA
Sinking to Ground
VID = −200mV (4)
85
65
145
IOUT Output Current VO = 0.5V from either supply ±75 mA
PSRR Power Supply Rejection Ratio (V+, V) = (4.5V, −4.5V) to (5.5V, −5.5V) 78 90 dB
IS Supply Current (per channel) No Load 2.70 4.50
5.50
mA
(1) Typical values represent the most likely parametric norm.
(2) All limits are ensured by testing or statistical analysis.
(3) Slew rate is the average of the rising and falling slew rates.
(4) Short circuit test is a momentary test. Output short circuit duration is infinite for VS < 6V at room temperature and below. For VS > 6V, allowable short circuit duration is 1.5ms.
(5) Offset voltage average drift determined by dividing the change in VOS at temperature extremes by the total temperature change.
(6) Positive current corresponds to current flowing into the device.

7.8 Typical Performance Characteristics

V+ = +5, V = −5V, RF = RL = 2kΩ. Unless otherwise specified.
30158357.gif
Figure 1. Closed Loop Frequency Response
for Various Supplies
30158335.gif
Figure 3. Closed Loop Gain vs. Frequency
for Various Gain
30158348.gif
Figure 5. Closed Loop Gain vs. Frequency
for Various Supplies
30158347.gif
Figure 7. Large Signal Frequency Response
30158344.gif
Figure 9. Closed Loop Frequency Response
for Various Supplies
30158309.gif
Figure 11. VOUT (VPP) for THD < 0.5%
30158310.gif
Figure 13. VOUT (VPP) for THD < 0.5%
30158333.gif
Figure 15. Open Loop Gain/Phase
for Various Temperature
30158315.gif
Figure 17. HD3 (dBc) vs. Output Swing
30158305.gif
Figure 19. HD3 vs. Output Swing
30158313.gif
Figure 21. Settling Time vs. Input Step Amplitude
(Output Slew and Settle Time)
30158318.gif
Figure 23. VOUT from V+ vs. ISOURCE
30158316.gif
Figure 25. VOUT from V+ vs. ISOURCE
30158329.gif
Figure 27. Swing vs. VS
30158320.gif
Figure 29. Output Sinking Saturation Voltage vs. IOUT
30158302.gif
Figure 31. Closed Loop Output Impedance vs. Frequency,
AV = +1
30158307.gif
Figure 33. CMRR vs. Frequency
30158330.gif
Figure 35. VOS vs. VOUT (Typical Unit)
30158322.gif
Figure 37. VOS vs. VS (for 3 Representative Units)
30158324.gif
Figure 39. VOS vs. VS (for 3 Representative Units)
30158326.gif
Figure 41. IOS vs. VS
30158321.gif
Figure 43. IS vs. VS
30158341.gif
Figure 45. Large Signal Step Response
30158356.gif
Figure 47. Small Signal Step Response
30158352.gif
Figure 49. Small Signal Step Response
30158337.gif
Figure 51. Large Signal Step Response
30158360.gif
Figure 53. Large Signal Step Response
30158351.gif
Figure 2. Closed Loop Gain vs. Frequency
for Various Gain
30158350.gif
Figure 4. Closed Loop Frequency Response
for Various Temperature
30158334.gif
Figure 6. Closed Loop Frequency Response
for Various Temperature
30158346.gif
Figure 8. Closed Loop Small Signal Frequency Response
for Various Supplies
30158345.gif
Figure 10. ±0.1dB Gain Flatness
for Various Supplies
30158308.gif
Figure 12. VOUT (VPP) for THD < 0.5%
30158332.gif
Figure 14. Open Loop Gain/Phase
for Various Temperature
30158314.gif
Figure 16. HD2 (dBc) vs. Output Swing
30158304.gif
Figure 18. HD2 vs. Output Swing
30158306.gif
Figure 20. THD (dBc) vs. Output Swing
30158312.gif
Figure 22. Input Noise vs. Frequency
30158319.gif
Figure 24. VOUT from V vs. ISINK
30158317.gif
Figure 26. VOUT from V vs. ISINK
30158331.gif
Figure 28. Short Circuit Current (to VS/2) vs. VS
30158301.gif
Figure 30. Output Sourcing Saturation Voltage vs. IOUT
30158303.gif
Figure 32. PSRR vs. Frequency
30158311.gif
Figure 34. Crosstalk Rejection vs. Frequency
(Output to Output)
30158327.gif
Figure 36. VOS vs. VCM (Typical Unit)
30158323.gif
Figure 38. VOS vs. VS (for 3 Representative Units)
30158325.gif
Figure 40. IB vs. VS
30158328.gif
Figure 42. IS vs. VCM
30158353.gif
Figure 44. Small Signal Step Response
30158339.gif
Figure 46. Large Signal Step Response
30158336.gif
Figure 48. Small Signal Step Response
30158338.gif
Figure 50. Small Signal Step Response
30158354.gif
Figure 52. Large Signal Step Response