SNOS990H Data sheet

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
Differential input voltage		±Supply voltage
Supply voltage (V⁺ – V^–)			6	V
Output short circuit to V⁺		See⁽³⁾
Output short circuit to V^–		See⁽⁴⁾
Lead temperature	Infrared or convection reflow (20 s)		235	°C
Lead temperature	Wave soldering (10 s)		260	°C
Junction temperature, T_J⁽⁵⁾			150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.

(3) Shorting output to V⁺ will adversely affect reliability.

(4) Shorting output to V^- will adversely affect reliability.

(5) The maximum power dissipation is a function of T_J(MAX), R_θJA. The maximum allowable power dissipation at any ambient temperature is P_D = (T_J(MAX) – T_A) / R_θJA. All numbers apply for packages soldered directly onto a PCB.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM)⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Machine model (MM)⁽²⁾	±200	V

(1) Human Body Model, applicable std. MIL-STD-883, Method 3015.7.

(2) Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
Supply voltage		2.7	5.5	V
Temperature		–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LMV341-N	LMV342-N		LMV344-N		UNIT
		DCK (SC70)	D (SOIC)	DGK (VSSOP)	D (SOIC)	PW (TSSOP)
		6 PINS	8 PINS	8 PINS	14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	414	190	235	145	155	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	116.1	65.2	68.4	45.9	50.5	°C/W
R_θJB	Junction-to-board thermal resistance	53.3	61.4	98.8	44.1	66.2	°C/W
ψ_JT	Junction-to-top characterization parameter	8.8	16.1	9.8	10.2	6.3	°C/W
ψ_JB	Junction-to-board characterization parameter	52.7	60.8	97.3	43.7	65.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	—	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics – 2.7 V (DC)

T_J = 25°C, V⁺ = 2.7 V, V^– = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN⁽²⁾	TYP⁽³⁾	MAX⁽²⁾	UNIT
V_OS	Input offset voltage	LMV341-N	T_J = 25°C		0.25	4	mV
		LMV341-N	−40°C ≤ T_J ≤ 125°C			4.5
		LMV342-N and LMV344-N	T_J = 25°C		0.55	5
		LMV342-N and LMV344-N	−40°C ≤ T_J ≤ 125°C			5.5
TCV_OS	Input offset voltage average drift				1.7		µV/°C
I_B	Input bias current	T_J = 25°C			0.02	120	pA
I_B	Input bias current	-40°C ≤ T_J ≤ 150°C				250	pA
I_OS	Input offset current				6.6		fA
I_S	Supply current	Per amplifier	T_J = 25°C		100	170	µA
		Per amplifier	−40°C ≤ T_J ≤ 125°C			230
		Shutdown mode, V_SD = 0 V, LMV341-N	T_J = 25°C		4.5 × 10^–5	1
		Shutdown mode, V_SD = 0 V, LMV341-N	−40°C ≤ T_J ≤ 125°C			1.5
CMRR	Common-mode rejection ratio	0 V ≤ V_CM ≤ 1.7 V, 0 V ≤ V_CM ≤ 1.6 V	T_J = 25°C	56	80		dB
CMRR	Common-mode rejection ratio	0 V ≤ V_CM ≤ 1.7 V, 0 V ≤ V_CM ≤ 1.6 V	−40°C ≤ T_J ≤ 125°C	50			dB
PSRR	Power supply rejection ratio	2.7 V ≤ V⁺ ≤ 5 V	T_J = 25°C	65	82		dB
PSRR	Power supply rejection ratio	2.7 V ≤ V⁺ ≤ 5 V	−40°C ≤ T_J ≤ 125°C	60			dB
V_CM	Input common-mode voltage	For CMRR ≥ 50 dB	V+		1.9	1.7	V
V_CM	Input common-mode voltage	For CMRR ≥ 50 dB	V–	0	−0.2		V
A_V	Large signal voltage gain	R_L = 10 kΩ to 1.35 V	T_J = 25°C	78	113		dB
		R_L = 10 kΩ to 1.35 V	–40°C ≤ T_J ≤ 125°C	70
		R_L = 2 kΩ to 1.35 V	T_J = 25°C	72	103
		R_L = 2 kΩ to 1.35 V	–40°C ≤ T_J ≤ 125°C	64
V_O	Output swing	R_L = 2 kΩ to 1.35 V	T_J = 25°C		24	60	mV
			–40°C ≤ T_J ≤ 125°C			95
			T_J = 25°C	60	26
			–40°C ≤ T_J ≤ 125°C	95
		R_L = 10 kΩ to 1.35 V	T_J = 25°C		5	30
			–40°C ≤ T_J ≤ 125°C			40
			T_J = 25°C	30	5.3
			–40°C ≤ T_J ≤ 125°C	40
I_O	Output short-circuit current	Sourcing, LMV341-N and LMV342-N		20	32		mA
		Sourcing, LMV344-N		18	24
		Sinking		15	24
t_on	Turnon time from shutdown	LMV341-N			5		µs
V_SD	Shutdown pin voltage	ON mode, LMV341-N		2.4	1.7	2.7	V
V_SD	Shutdown pin voltage	Shutdown mode, LMV341-N		0	1	0.8	V

(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where T_J > T_A.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

6.6 Electrical Characteristics – 2.7 V (AC)

T_J = 25°C, V⁺ = 2.7V, V⁻ = 0V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS	TYP⁽³⁾	UNIT
SR	Slew rate	R_L = 10 kΩ⁽⁴⁾	1	V/µs
GBW	Gain bandwidth product	R_L = 100 kΩ, C_L = 200 pF	1	MHz
Φ_m	Phase margin	R_L = 100 kΩ	72	°
G_m	Gain margin	R_L = 100 kΩ	20	dB
e_n	Input-referred voltage noise	f = 1 kHz	40	nV/√Hz
i_n	Input-referred current noise	f = 1 kHz	0.001	pA/√Hz
THD	Total harmonic distortion	f = 1 kHz, A_V = +1, R_L = 600 Ω, V_IN = 1V_PP	0.017%

(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where T_J > T_A.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Connected as voltage follower with 2-V_PP step input. Number specified is the slower of the positive and negative slew rates.

6.7 Electrical Characteristics – 5 V (DC)

T_J = 25°C, V⁺ = 5 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2, and R_L > 1 MΩ (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS		MIN⁽²⁾	TYP⁽³⁾	MAX⁽²⁾	UNIT
V_OS	Input offset voltage	LMV341-N	T_J = 25°C		0.025	4	mV
		LMV341-N	–40°C ≤ T_J ≤ 125°C			4.5
		LMV342-N and LMV344-N	T_J = 25°C		0.7	5
		LMV342-N and LMV344-N	–40°C ≤ T_J ≤ 125°C			5.5
TCV_OS	Input offset voltage average drift				1.9		µV/°C
I_B	Input bias current	T_J = 25°C			0.02	200	pA
I_B	Input bias current	–40°C ≤ T_J ≤ 125°C				375	pA
I_OS	Input offset current				6.6		fA
I_S	Supply current	Per amplifier	T_J = 25°C		107	200	µA
		Per amplifier	–40°C ≤ T_J ≤ 125°C			260
		Shutdown mode, V_SD = 0 V, LMV341-N	T_J = 25°C		0.033	1
		Shutdown mode, V_SD = 0 V, LMV341-N	–40°C ≤ T_J ≤ 125°C			1.5
CMRR	Common-mode rejection ratio	0 V ≤ V_CM ≤ 4 V, 0 V ≤ V_CM ≤ 3.9 V	T_J = 25°C	56	86		dB
CMRR	Common-mode rejection ratio	0 V ≤ V_CM ≤ 4 V, 0 V ≤ V_CM ≤ 3.9 V	–40°C ≤ T_J ≤ 125°C	50			dB
PSRR	Power supply rejection ratio	2.7 V ≤ V⁺ ≤ 5 V	T_J = 25°C	65	82		dB
PSRR	Power supply rejection ratio	2.7 V ≤ V⁺ ≤ 5 V	–40°C ≤ T_J ≤ 125°C	60			dB
V_CM	Input common-mode voltage	For CMRR ≥ 50 dB	V+		4.2	4	V
V_CM	Input common-mode voltage	For CMRR ≥ 50 dB	V–	0	−0.2		V
A_V	Large signal voltage gain⁽⁴⁾	R_L = 10 kΩ to 2.5 V	T_J = 25°C	78	116		dB
		R_L = 10 kΩ to 2.5 V	–40°C ≤ T_J ≤ 125°C	70
		R_L = 2 kΩ to 2.5 V	T_J = 25°C	72	107
		R_L = 2 kΩ to 2.5 V	–40°C ≤ T_J ≤ 125°C	64
V_O	Output swing	R_L = 2 kΩ to 2.5 V	T_J = 25°C		32	60	mV
			–40°C ≤ T_J ≤ 125°C			95
			T_J = 25°C	60	34
			–40°C ≤ T_J ≤ 125°C	95
		R_L = 10 kΩ to 2.5 V	T_J = 25°C		7	30
			–40°C ≤ T_J ≤ 125°C			40
			T_J = 25°C	30	7
			–40°C ≤ T_J ≤ 125°C	40
I_O	Output short-circuit current	Sourcing		85	113		mA
I_O	Output short-circuit current	Sinking		50	75		mA
t_on	Turnon time from shutdown	LMV341-N			5		µs
V_SD	Shutdown pin voltage	ON mode, LMV341-N		4.5	3.1	5	V
V_SD	Shutdown pin voltage	Shutdown mode, LMV341-N		0	1	0.8	V

(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where T_J > T_A.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) R_L is connected to mid-supply. The output voltage is GND + 0.2 V ≤ V_O ≤ V⁺– 0.2 V

6.8 Electrical Characteristics – 5 V (AC)

T_J = 25°C, V⁺ = 5 V, V⁻ = 0 V, V_CM = V⁺/ 2, V_O = V⁺/ 2 and R_L > 1 MΩ (unless otherwise noted)⁽¹⁾

PARAMETER		CONDITIONS	TYP⁽³⁾	UNIT
SR	Slew rate	R_L = 10 kΩ⁽⁴⁾	1	V/µs
GBW	Gain-bandwidth product	R_L = 10 kΩ, C_L = 200 pF	1	MHz
Φ_m	Phase margin	R_L = 100 kΩ	70	deg
G_m	Gain margin	R_L = 100 kΩ	20	dB
e_n	Input-referred voltage noise	f = 1 kHz	39	nV/√Hz
i_n	Input-referred current noise	f = 1 kHz	0.001	pA/√Hz
THD	Total harmonic distortion	f = 1 kHz, A_V = +1, R_L = 600 Ω, V_IN = 1V_PP	0.012%

(1) Electrical characteristic values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J = T_A. No specification of parametric performance is indicated in the electrical tables under conditions of internal self heating where T_J > T_A.

(2) All limits are specified by testing or statistical analysis.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.

(4) Connected as voltage follower with 2-V_PP step input. Number specified is the slower of the positive and negative slew rates.