SNOSC69D April   2012  – March 2017 LMV611 , LMV612 , LMV614

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics - 1.8 V (DC)
    6. 6.6  Electrical Characteristics - 1.8 V (AC)
    7. 6.7  Electrical Characteristics - 2.7 V (DC)
    8. 6.8  Electrical Characteristics - 2.7 V (AC)
    9. 6.9  Electrical Characteristics - 5 V (DC)
    10. 6.10 Electrical Characteristics - 5 V (AC)
    11. 6.11 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output Stage
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input Bias Current Consideration
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Half-Wave Rectifier With Rail-to-Ground Output Swing
      2. 8.1.2 Instrumentation Amplifier With Rail-to-Rail Input and Output
    2. 8.2 Typical Applications
      1. 8.2.1 High-Side Current Sensing
        1. 8.2.1.1 Design Requirements
          1. 8.2.1.1.1 Custom Design With WEBENCH® Tools
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Custom Design With WEBENCH® Tools
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Related Links
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Community Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)(3)
MIN MAX UNIT
Differential input voltage ±Supply voltage
Supply voltage (V+–V −) 6 V
Voltage at input or output pin V– – 0.3 V++ 0.3 V
Junction temperature, TJMAX(4) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications.
(3) Soldering specifications for all packages available at www.ti.com and Absolute Maximum Ratings for Soldering.
(4) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Machine model (MM)(2) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Machine model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage 1.8 5.5 V
Temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC(1) LMV611 LMV612 LMV614 UNIT
DBV
(SOT-23)		 DCK
(SC70)		 D
(SOIC)		 DGK
(VSSOP)		 D
(SOIC)		 PW
(TSSOP)
5 PINS 5 PINS 8 PINS 8 PINS 14 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 197.2 285.9 125.9 184.5 94.4 124.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 156.7 115.9 70.2 74.3 52.5 51.4 °C/W
RθJB Junction-to-board thermal resistance 55.6 63.7 66.5 105.1 48.9 67.2 °C/W
ψJT Junction-to-top characterization parameter 41.4 4.5 19.8 13.1 14.3 6.6 °C/W
ψJB Junction-to-board characterization parameter 55 62.9 65.9 103.6 48.6 66.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance — — — — — — °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics – 1.8 V (DC)

All limits ensured for TJ = 25°C, V+ = 1.8 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV611 (single) 1 4 mV
LMV612 (dual) and
LMV614 (quad)		 1 5.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current 15 nA
IOS Input offset current 13 nA
IS Supply current (per channel) 103 185 µA
CMRR Common-mode rejection ratio LMV611, 0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V(4)		 60 78 dB
LMV612 and LMV614,
0 V ≤ VCM ≤ 0.6 V,
1.4 V ≤ VCM ≤ 1.8 V(4)		 55 76
−0.2 V ≤ VCM ≤ 0 V,
1.8 V ≤ VCM ≤ 2 V 		50 72
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V 100 dB
CMVR Input common-mode voltage For CMRR range ≥ 50 dB V–, TA = 25°C V– – 0.2 –0.2 V
V+, TA = 25°C 2.1 V+ + 0.2
TA = −40°C to 85°C V– V+
TA = 125°C V– + 0.2 V+ – 0.2
AV Large signal voltage gain
LMV611 (single)		 RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 77 101 dB
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 80 105
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)		 RL = 600 Ω to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 75 90
RL = 2 kΩ to 0.9 V,
VO = 0.2 V to 1.6 V, VCM = 0.5 V		 78 100
VO Output swing RL = 600 Ω to 0.9 V 1.65 1.72 V
VIN = ±100 mV 0.077 0.105
RL = 2 kΩ to 0.9 V 1.75 1.77
VIN = ±100 mV 0.024 0.035
IO Output short-circuit current(5) Sourcing, VO = 0 V,
VIN = 100 mV		 8 mA
Sinking, VO = 1.8 V,
VIN = –100 mV		 9
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For specified temperature ranges, see Input common mode voltage specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.6 Electrical Characteristics – 1.8 V (AC)

All limits ensured for TJ = 25°C, V+ = 1.8 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4) 0.35 V/µs
GBW Gain-bandwidth product 1.4 MHz
Φm Phase margin 67 °
Gm Gain margin 7 dB
en Input-referred voltage noise f = 10 kHz, VCM = 0.5 V 60 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1 VPP		 0.023%
Amp-to-amp isolation(5) 123 dB
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

6.7 Electrical Characteristics – 2.7 V (DC)

All limits ensured for TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV611 (single) 1 4 mV
LMV612 (dual) and
LMV614 (quad)		 1 5.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current 15 nA
IOS Input offset current 8 nA
IS Supply current (per channel) 105 190 µA
CMRR Common-mode rejection ratio LMV611, 0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V(4)		 60 81 dB
LMV612 and LMV614,
0 V ≤ VCM ≤ 1.5 V,
2.3 V ≤ VCM ≤ 2.7 V(4)		 55 80
−0.2 V ≤ VCM ≤ 0 V,
2.7 V ≤ VCM ≤ 2.9 V 		50 74
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V,
VCM = 0.5 V		 100 dB
VCM Input common-mode voltage For CMRR range ≥ 50 dB V–,TA = 25°C V– – 0.2 –0.2 V
V+,TA = 25°C 3 V+ + 0.2
TA = –40°C to 85°C V– V+
TA = 125°C V– + 0.2 V+ – 0.2
AV Large signal voltage gain
LMV611 (single)		 RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V		 87 104 dB
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V		 92 110
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)		 RL = 600 Ω to 1.35 V,
VO = 0.2 V to 2.5 V		 78 90
RL = 2 kΩ to 1.35 V,
VO = 0.2 V to 2.5 V		 81 100
VO Output swing RL = 600 Ω to 1.35 V 2.55 2.62 V
VIN = ±100 mV 0.083 0.11
RL = 2 kΩ to 1.35 V 2.65 2.675
VIN = ±100 mV 0.025 0.04
IO Output short-circuit current(5) Sourcing, VO = 0 V,
VIN = 100 mV		 30 mA
Sinking, VO = 0 V,
VIN = –100 mV		 25
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For specified temperature ranges, see input common mode voltage specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.8 Electrical Characteristics – 2.7 V (AC)

All limits ensured for TJ = 25°C, V+ = 2.7 V, V − = 0 V, VCM = 1 V, VO = 1.35 V, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4) 0.4 V/µs
GBW Gain-bandwidth product 1.4 MHz
Φm Phase margin 70 °
Gm Gain margin 7.5 dB
en Input-referred voltage noise f = 10 kHz, VCM = 0.5 V 57 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1,
RL = 600 Ω, VIN = 1 VPP		 0.022%
Amp-to-amp isolation(5) 123 dB
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

6.9 Electrical Characteristics – 5 V (DC)

All limits ensured for TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/ 2, VO = V+/ 2, and RL > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage LMV611 (single) 1 4 mV
LMV612 (dual) and
LMV614 (quad)		 1 5.5
TCVOS Input offset voltage average drift 5.5 µV/°C
IB Input bias current 14 35 nA
IOS Input offset current 9 nA
IS Supply current (per channel) 116 210 µA
CMRR Common-mode rejection ratio 0 V ≤ VCM ≤ 3.8 V,
4.6 V ≤ VCM ≤ 5 V(4)		 60 86 dB
–0.2 V ≤ VCM ≤ 0 V
5 V ≤ VCM ≤ 5.2 V 		50 78
PSRR Power supply rejection ratio 1.8 V ≤ V+ ≤ 5 V,
VCM = 0.5 V		 100 dB
CMVR Input common-mode voltage For CMRR range ≥ 50 dB V–, TA = 25°C V– – 0.2 –0.2 V
V+, TA = 25°C 5.3 V+ + 0.2
TA = –40°C to 85°C V– V+
TA = 125°C V– + 0.3 V+ – 0.3
AV Large signal voltage gain
LMV611 (single)		 RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V		 88 102 dB
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V		 94 113
Large signal voltage gain
LMV612 (dual) and
LMV614 (quad)		 RL = 600 Ω to 2.5 V,
VO = 0.2 V to 4.8 V		 81 90
RL = 2 kΩ to 2.5 V,
VO = 0.2 V to 4.8 V		 85 100
VO Output swing RL = 600 Ω to 2.5 V 4.855 4.89 V
VIN = ±100 mV 0.12 0.16
RL = 2 kΩ to 2.5 V 4.945 4.967
VIN = ±100 mV 0.037 0.065
IO Output short-circuit current(5) LMV611, Sourcing, VO = 0 V,
VIN = 100 mV		 100 mA
Sinking, VO = 5 V,
VIN = –100 mV		 65
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) For specified temperature ranges, see Input common mode voltage specifications.
(5) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.10 Electrical Characteristics – 5 V (AC)

All limits ensured for TJ = 25°C, V+ = 5 V, V − = 0 V, VCM = V+/ 2, VO = 2.5 V, and R L > 1 MΩ (unless otherwise noted).(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
SR Slew rate(4) 0.42 V/µs
GBW Gain-bandwidth product 1.5 MHz
Φm Phase margin 71 °
Gm Gain margin 8 dB
en Input-referred voltage noise f = 10 kHz, VCM = 1 V 50 nV/√Hz
in Input-referred current noise f = 10 kHz 0.08 pA/√Hz
THD Total harmonic distortion f = 1 kHz, AV = +1,
RL = 600 Ω, VO = 1 V PP		 0.022%
Amp-to-amp isolation(5) 123 dB
(1) Electrical characteristics values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that TJ = TA. No assurance of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA. See Application and Implementation for information of temperature derating of the device. Absolute Maximum Ratings indicated junction temperature limits beyond which the device may be permanently degraded, either mechanically or electrically.
(2) All limits are specified by testing or statistical analysis.
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and also depends on the application and configuration. The typical values are not tested and are not ensured on shipped production material.
(4) Connected as voltage follower with input step from V− to V+. Number specified is the slower of the positive and negative slew rates.
(5) Input-referred, RL = 100 kΩ connected to V+ / 2. Each amp excited in turn with 1 kHz to produce VO = 3 VPP (for supply voltages < 3 V, VO = V+).

6.11 Typical Characteristics

VS = 5 V, single supply, TA = 25°C (unless otherwise noted)
LMV611 LMV612 LMV614 30185622.gif Figure 1. Supply Current vs Supply Voltage (LMV611)
LMV611 LMV612 LMV614 30185637.gif Figure 3. Offset Voltage vs Common-Mode Range
LMV611 LMV612 LMV614 30185625.gif Figure 5. Sourcing Current vs Output Voltage
LMV611 LMV612 LMV614 30185649.gif Figure 7. Output Voltage Swing vs Supply Voltage
LMV611 LMV612 LMV614 30185614.gif Figure 9. Gain and Phase vs Frequency
LMV611 LMV612 LMV614 30185609.gif Figure 11. Gain and Phase vs Frequency
LMV611 LMV612 LMV614 30185639.gif Figure 13. CMRR vs Frequency
LMV611 LMV612 LMV614 30185658.gif Figure 15. Input Voltage Noise vs Frequency
LMV611 LMV612 LMV614 30185667.gif Figure 17. THD vs Frequency
LMV611 LMV612 LMV614 30185669.gif Figure 19. Slew Rate vs Supply Voltage
LMV611 and LMV614
LMV611 LMV612 LMV614 30185670.gif Figure 21. Small Signal Noninverting Response
LMV611 LMV612 LMV614 30185672.gif Figure 23. Small Signal Noninverting Response
LMV611 LMV612 LMV614 30185674.gif Figure 25. Large Signal Noninverting Response
LMV611 LMV612 LMV614 30185676.gif Figure 27. Short-Circuit Current vs Temperature (Sinking)
LMV611 LMV612 LMV614 30185636.gif Figure 2. Offset Voltage vs Common-Mode Range
LMV611 LMV612 LMV614 30185638.gif Figure 4. Offset Voltage vs Common-Mode Range
LMV611 LMV612 LMV614 30185628.gif Figure 6. Sinking Current vs Output Voltage
LMV611 LMV612 LMV614 30185650.gif Figure 8. Output Voltage Swing vs Supply Voltage
LMV611 LMV612 LMV614 30185615.gif Figure 10. Gain and Phase vs Frequency
LMV611 LMV612 LMV614 30185610.gif Figure 12. Gain and Phase vs Frequency
LMV611 LMV612 LMV614 30185656.gif Figure 14. PSRR vs Frequency
LMV611 LMV612 LMV614 30185666.gif Figure 16. Input Current Noise vs Frequency
LMV611 LMV612 LMV614 30185668.gif Figure 18. THD vs Frequency
LMV611 LMV612 LMV614 Slew_vs_SupplySVA.gif Figure 20. Slew Rate vs Supply Voltage
LMV612 Only
LMV611 LMV612 LMV614 30185671.gif Figure 22. Small Signal Noninverting Response
LMV611 LMV612 LMV614 30185673.gif Figure 24. Large Signal Noninverting Response
LMV611 LMV612 LMV614 30185675.gif Figure 26. Large Signal Noninverting Response
LMV611 LMV612 LMV614 30185677.gif Figure 28. Short-Circuit Current vs Temperature (Sourcing)