SNVS651H January 2010 – August 2015 LMZ12001
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN, RON to GND | –0.3 | 25 | V | |
EN, FB, SS to GND | –0.3 | 7 | V | |
Junction Temperature | 150 | °C | ||
Peak Reflow Case Temperature (30 sec) | 245 | °C | ||
Storage Temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIN | 4.5 | 20 | V | |
EN | 0 | 6.5 | V | |
Operation junction temperature | –40 | 125 | °C |
THERMAL METRIC(1) | LMZ12001 | UNIT | ||
---|---|---|---|---|
NDW | ||||
7 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | 4-layer JEDEC Printed-Circuit-Board, No air flow | 19.3 | °C/W |
2-layer JEDEC Printed-Circuit-Board, No air flow | 21.5 | |||
RθJC(top) | Junction-to-case (top) thermal resistance | 1.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN(1) | TYP(2) | MAX(1) | UNIT | ||
---|---|---|---|---|---|---|---|
SYSTEM PARAMETERS | |||||||
ENABLE CONTROL | |||||||
VEN | EN threshold trip point | VEN rising | 1.18 | V | |||
apply over the junction temperature (TJ) range of –40°C to +125°C | 1.1 | 1.25 | |||||
VEN-HYS | EN threshold hysteresis | VEN falling | 90 | mV | |||
SOFT-START | |||||||
ISS | SS source current | VSS = 0 V | 8 | µA | |||
apply over the junction temperature (TJ) range of –40°C to +125°C | 5 | 11 | |||||
ISS-DIS | SS discharge current | –200 | µA | ||||
CURRENT LIMIT | |||||||
ICL | Current limit threshold | DC average | 2 | A | |||
apply over the junction temperature (TJ) range of –40°C to +125°C | 1.4 | 3 | |||||
ON/OFF TIMER | |||||||
tON-MIN | ON timer minimum pulse width | 150 | ns | ||||
tOFF | OFF timer pulse width | 260 | ns | ||||
REGULATION AND OVERVOLTAGE COMPARATOR | |||||||
VFB | In-regulation feedback voltage | VSS >+ 0.8 V TJ = -40°C to 125°C IO = 1 A |
0.798 | V | |||
apply over the junction temperature (TJ) range of –40°C to +125°C | 0.777 | 0.818 | |||||
VSS >+ 0.8 V TJ = 25°C IO = 10 mA |
0.786 | 0.802 | 0.818 | ||||
VFB-OV | Feedback overvoltage protection threshold | 0.92 | V | ||||
IFB | Feedback input bias current | 5 | nA | ||||
IQ | Non-switching input current | VFB= 0.86 V | 1 | mA | |||
ISD | Shutdown quiescent current | VEN= 0 V | 25 | μA | |||
THERMAL CHARACTERISTICS(4) | |||||||
TSD | Thermal shutdown | Rising | 165 | °C | |||
TSD-HYST | Thermal shutdown hysteresis | Falling | 15 | °C | |||
PERFORMANCE PARAMETERS | |||||||
ΔVO | Output voltage ripple | 8 | mV PP | ||||
ΔVO/ΔVIN | Line regulation | VIN = 8 V to 20 V, IO= 1 A | 0.01% | ||||
ΔVO/ΔVIN | Load regulation | VIN = 12 V | 1.5 | mV/A | |||
η | Efficiency | VIN = 12 V, VO = 1.8 V, IO = 1 A | 85% |