SNVS636O December 2009 – August 2015 LMZ12003
PRODUCTION DATA.
| MIN | MAX | UNIT | |
|---|---|---|---|
| VIN, RON to GND | –0.3 | 25 | V |
| EN, FB, SS to GND | –0.3 | 7 | V |
| Junction Temperature | 150 | °C | |
| Peak Reflow Case Temperature (30 sec) | 245 | °C | |
| Storage Temperature, Tstg | –65 | 150 | °C |
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) | ±2000 | V |
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VIN | 4.5 | 20 | V | |
| EN | 0 | 6.5 | V | |
| Operation Junction Temperature | –40 | 125 | °C | |
| THERMAL METRIC(1) | LMZ12003 | UNIT | ||
|---|---|---|---|---|
| NDW | ||||
| 7 PINS | ||||
| RθJA | Junction-to-ambient thermal resistance(2) | 4-layer JEDEC Printed-Circuit-Board, 100 vias, No air flow | 19.3 | °C/W |
| 2-layer JEDEC Printed-Circuit-Board, No air flow | 21.5 | |||
| RθJC(top) | Junction-to-case (top) thermal resistance | No air flow | 1.9 | °C/W |
| PARAMETER | TEST CONDITIONS | MIN(1) | TYP(2) | MAX(1) | UNIT | ||
|---|---|---|---|---|---|---|---|
| SYSTEM PARAMETERS | |||||||
| ENABLE CONTROL | |||||||
| VEN | EN threshold trip point | VEN rising | 1.18 | V | |||
| over the junction temperature (TJ) range of –40°C to +125°C | 1.1 | 1.25 | |||||
| VEN-HYS | EN threshold hysteresis | VEN falling | 90 | mV | |||
| SOFT-START | |||||||
| ISS | SS source current | VSS = 0 V | 8 | µA | |||
| over the junction temperature (TJ) range of –40°C to +125°C | 5 | 11 | |||||
| ISS-DIS | SS discharge current | –200 | µA | ||||
| CURRENT LIMIT | |||||||
| ICL | Current limit threshold | DC average VIN= 12 V to 20 V |
4.2 | A | |||
| over the junction temperature (TJ) range of –40°C to +125°C | 3.2 | 5.25 | |||||
| ON/OFF Timer | |||||||
| tON-MIN | ON timer minimum pulse width | 150 | ns | ||||
| tOFF | OFF timer pulse width | 260 | ns | ||||
| REGULATION AND OVERVOLTAGE COMPARATOR | |||||||
| VFB | In-regulation feedback voltage | VSS >+ 0.8 V TJ = –40°C to 125°C IO = 3 A |
0.793 | V | |||
| over the junction temperature (TJ) range of –40°C to +125°C | 0.773 | 0.813 | |||||
| VSS >+ 0.8 V TJ = 25°C IO = 10 mA |
0.784 | 0.8 | 0.816 | ||||
| VFB-OV | Feedback overvoltage protection threshold | 0.92 | V | ||||
| IFB | Feedback input bias current | 5 | nA | ||||
| IQ | Non-switching input current | VFB= 0.86 V | 1 | mA | |||
| ISD | Shutdown quiescent current | VEN= 0 V | 25 | μA | |||
| THERMAL CHARACTERISTICS | |||||||
| TSD | Thermal shutdown | Rising | 165 | °C | |||
| TSD-HYST | Thermal shutdown hysteresis | Falling | 15 | °C | |||
| PERFORMANCE PARAMETERS | |||||||
| ΔVO | Output voltage ripple | 8 | mVPP | ||||
| ΔVO/ΔVIN | Line regulation | VIN = 8 V to 20 V, IO= 3 A | 0.01% | ||||
| ΔVO/ΔVIN | Load regulation | VIN = 12 V | 1.5 | mV/A | |||
| η | Efficiency | VIN = 12 V, VO = 1.8 V, IO = 1 A | 87% | ||||
| VIN = 12 V, VO = 1.8 V, IO = 3 A | 77% | ||||||







| 12 VIN 3.3 VO 0.6-A to 3-A Step |






| 12 VIN 3.3 VO 3 A 20 mV/div 1 μs/div |
