SBVS058D June   2005  – April 2026 REF3212 , REF3220 , REF3225 , REF3230 , REF3233 , REF3240

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Electrical Characteristics
    4. 5.4 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
      1. 6.1.1 Supply Voltage
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Thermal Hysteresis
      2. 6.3.2 Temperature Drift
      3. 6.3.3 Noise Performance
      4. 6.3.4 Load Regulation
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Long-Term Stability
    2. 7.2 Typical Application
      1. 7.2.1 Detailed Design Procedure
        1. 7.2.1.1 Negative Reference Voltage
        2. 7.2.1.2 Data Acquisition
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.3 Electrical Characteristics

Boldface limits apply over the listed temperature range.
At TA = +25°C, ILOAD = 0mA, and VIN = 5V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
REF3212 (1.25V)
OUTPUT VOLTAGE VOUT 1.2475 1.25 1.2525 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 17 µVPP
Voltage noise f = 10Hz to 10kHz 24 µVRMS
REF3220 (2.048V)
OUTPUT VOLTAGE VOUT 2.044 2.048 2.052 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 27 µVPP
Voltage noise f = 10Hz to 10kHz 39 µVRMS
REF3225 (2.5V)
OUTPUT VOLTAGE VOUT 2.495 2.50 2.505 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 33 µVPP
Voltage noise f = 10Hz to 10kHz 48 µVRMS
REF3230 (3V)
OUTPUT VOLTAGE VOUT 2.994 3 3.006 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 39 µVPP
Voltage noise f = 10Hz to 10kHz 57 µVRMS
REF3233 (3.3V)
OUTPUT VOLTAGE VOUT 3.293 3.3 3.307 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 43 µVPP
Voltage noise f = 10Hz to 10kHz 63 µVRMS
REF3240 (4.096V)
OUTPUT VOLTAGE VOUT 4.088 4.096 4.104 V
Initial accuracy –0.2 0.01 0.2 %
NOISE
Output voltage noise f = 0.1Hz to 10Hz 53 µVPP
Voltage noise f = 10Hz to 10kHz 78 µVRMS
REF3212 / REF3220 / REF3225 / REF3230 / REF3233 / REF3240
OUTPUT VOLTAGE TEMP DRIFT dVOUT/dT
0°C ≤ TA ≤ +125°C 4 7 ppm/°C
–40°C ≤ TA ≤ +125°C 10.5 20 ppm/°C
LONG-TERM STABILITY 0 to 1000h 55 ppm
LINE REGULATION VOUT + 0.05(1) ≤ VIN ≤ 5.5V –65 15 +65 ppm/V
LOAD REGULATION(3) dVOUT/dILOAD
Sourcing 0mA < ILOAD < 10mA, VIN = VOUT + 250mV(1) –40 3 40 µV/mA
Sinking –10mA < ILOAD < 0mA, VIN = VOUT + 100mV(1) –60 20 60 µV/mA
THERMAL HYSTERESIS(2) dT
First cycle 100 ppm
Additional cycles 25 ppm
DROPOUT VOLTAGE(1) VIN – VOUT 0°C ≤ TA ≤ +125°C 5 50 mV
OUTPUT CURRENT ILOAD VIN = VOUT + 250mV(1) –10 10 mA
SHORT-CIRCUIT CURRENT ISC
Sourcing 50 mA
Sinking 40 mA
TURN-ON SETTLING TIME To 0.1% at VIN = 5V with CL = 0 60 µs
ENABLE/SHUTDOWN(4)
VL Reference in Shutdown mode 0 0.7 V
VH Reference is active 1.5 VIN V
POWER SUPPLY IL = 0
Voltage VIN VOUT + 0.05(1) 5.5 V
Current IQ ENABLE > 1.5V 110 130 µA
Over temperature 0°C ≤ TA ≤ +125°C 125 145 µA
Shutdown IS ENABLE < 0.7V 0.1 1 µA
TEMPERATURE RANGE
Specified –40 +125 °C
Operating –55 +135 °C
Storage –65 +150 °C
Thermal resistance, SOT23-6 θJA 200 °C/W
(1) The minimum supply voltage for the REF3212 is 1.8V.
(2) Thermal hysteresis procedure is explained in more detail in Section 7.
(3) Load regulation is using force and sense lines; see Section 6.3.4 for more information.
(4) If the rise time of the input voltage is less than or equal to 2ms, the ENABLE and IN pins can be tied together. For rise times greater than 2ms, see Section 6.1.1.