SCDS119C january   2003  – December 2015 SN74CB3T3306

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage(2) –0.5 7 V
VIN Control input voltage(2)(3) –0.5 7 V
VI/O Switch I/O voltage(2)(3)(4) –0.5 7 V
IIK Control input clamp current VIN < 0 –50 mA
II/OK I/O port clamp current VI/O < 0 –50 mA
II/O ON-state switch current(5) ±128 mA
Continuous current through VCC or GND ±100 mA
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to ground, unless otherwise specified.
(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(4) VI and VO are used to denote specific conditions for VI/O.
(5) II and IO are used to denote specific conditions for II/O.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) +2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) +1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage 2.3 3.6 V
VIH High-level control input voltage VCC = 2.3 V to 2.7 V 1.7 5.5 V
VCC = 2.7 V to 3.6 V 2 5.5
VIL Low-level control input voltage VCC = 2.3 V to 2.7 V 0 0.7 V
VCC = 2.7 V to 3.6 V 0 0.8
VI/O Data input and output voltage 0 5.5 V
TA Operating free-air temperature –40 85 °C
(1) All unused control inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.4 Thermal Information

THERMAL METRIC(1) SN74CB3T3306 UNIT
DCT (SSOP) DCU (VSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 182.6 209.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 113.2 75.5 °C/W
RθJB Junction-to-board thermal resistance 95.1 88.9 °C/W
ψJT Junction-to-top characterization parameter 39.2 6.4 °C/W
ψJB Junction-to-board characterization parameter 94.1 88.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP(2) MAX UNIT
VIK VCC = 3 V, II = –18 mA
(see Figure 9 and Figure 1)		 –1.2 V
VOH
IIN Control inputs VCC = 3.6 V, VIN = 3.6 V to 5.5 V or GND ±10 µA
II VCC = 3.6 V, Switch ON,
VIN = VCC or GND		 VI = VCC – 0.7 V to 5.5 V ±20 µA
VI = 0.7 V to VCC – 0.7 V –40
VI = 0 to 0.7 V ±5
IOZ(3) VCC = 3.6 V, VO = 0 to 5.5 V, VI = 0, Switch OFF, VIN = VCC or GND ±10 µA
Ioff VCC = 0, VO = 0 to 5.5 V, VI = 0 10 µA
ICC VCC = 3.6 V, II/O = 0,
Switch ON or OFF, VIN = VCC or GND		 VI = VCC or GND 20 µA
VI = 5.5 V 20
ΔICC(4) Control inputs VCC = 3 V to 3.6 V, One input at VCC  – 0.6 V,
Other inputs at VCC or GND		 300 µA
Cin Control inputs VCC = 3.3 V, VIN = VCC or GND 3 pF
Cio(OFF) VCC = 3.3 V, VI/O = 5.5 V, 3.3 V, or GND, Switch OFF,
VIN = VCC or GND		 4.5 pF
Cio(ON) VCC = 3.3 V, Switch ON,
VIN = VCC or GND		 VI/O = 5.5 V or 3.3 V 4 pF
VI/O = GND 15
ron(5) VCC = 2.3 V, TYP at VCC = 2.5 V,
VI = 0		 IO = 24 mA 5 8 Ω
IO = 16 mA 5 8
VCC = 3 V, VI = 0 IO = 64 mA 5 7
IO = 32 mA 5 7
(1) VIN and IIN refer to control inputs. VI, VO, II, and IO refer to data pins.
(2) All typical values are at VCC = 3.3 V (unless otherwise noted), TA = 25°C.
(3) For I/O ports, the parameter IOZ includes the input leakage current.
(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than VCC or GND.
(5) Measured by the voltage drop between A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals.

6.6 Switching Characteristics

over recommended operating free-air temperature range unless otherwise noted (see Figure 4)
PARAMETER FROM
(INPUT)		 TO
(OUTPUT)		 TEST CONDITIONS MIN MAX UNIT
tpd(1) A or B B or A VCC = 2.5 V ± 0.2 V 0.15 ns
VCC = 3.3 V
± 0.3 V		 0.25 ns
ten OE A or B VCC = 2.5 V ± 0.2 V 1 8.5 ns
VCC = 3.3 V
± 0.3 V		 1 6.5 ns
tdis OE A or B VCC = 2.5 V ± 0.2 V 1 9 ns
VCC = 3.3 V
± 0.3 V
(1) The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).

6.7 Typical Characteristics

SN74CB3T3306 tc_out_vs_supp_2_SCDS119.gif Figure 1. VOH vs Supply Voltage
SN74CB3T3306 tc_out_vs_supp_1_SCDS119.gif Figure 3. VOH vs Supply Voltage
SN74CB3T3306 tc_out_vs_supp_3_SCDS119.gif Figure 2. VOH vs Supply Voltage