SCAS997 March   2024 SN74LV8T596-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Noise Characteristics
    9. 5.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Open-Drain CMOS Outputs
      2. 7.3.2 LVxT Enhanced Input Voltage
      3. 7.3.3 Wettable Flanks
      4. 7.3.4 Clamp Diode Structure
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
        1. 8.2.1.1 Power Considerations
        2. 8.2.1.2 Input Considerations
        3. 8.2.1.3 Output Considerations
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • BQB|16
  • PW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information

THERMAL METRIC(1) WBQB (WQFN) PW (TSSOP) UNIT
16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 105.6 135.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 96.6 70.3 °C/W
RθJB Junction-to-board thermal resistance 75.4 81.3 °C/W
ΨJT Junction-to-top characterization parameter 19.1 22.5 °C/W
ΨJB Junction-to-board characterization parameter 75.4 80.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 56.1 N/A °C/W
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.