SLES239A November   2008  – December 2016 TAS5352A

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Audio Specifications (BTL)
    7. 6.7 Audio Specifications (Single-Ended Output)
    8. 6.8 Audio Specifications (PBTL)
    9. 6.9 Typical Characteristics
      1. 6.9.1 BTL Configuration
      2. 6.9.2 SE Configuration
      3. 6.9.3 PBTL Configuration
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 System Power-Up and Power-Down Sequence
        1. 7.3.1.1 Powering Up
        2. 7.3.1.2 Powering Down
      2. 7.3.2 Mid Z Sequence Compatibility
      3. 7.3.3 Error Reporting
      4. 7.3.4 Device Protection System
        1. 7.3.4.1 Use of TAS5352A in High-Modulation-Index Capable Systems
        2. 7.3.4.2 Overcurrent (OC) Protection With Current Limiting and Overload Detection
        3. 7.3.4.3 Pin-to-Pin Short-Circuit Protection (PPSC)
        4. 7.3.4.4 Overtemperature Protection
        5. 7.3.4.5 Undervoltage Protection (UVP) and Power-On-Reset (POR)
      5. 7.3.5 Device Reset
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protection MODE Selection Pins
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 BTL Application With AD Modulation Filters - 2N
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 PCB Material Recommendation
          2. 8.2.1.2.2 PVDD Capacitor Recommendation
          3. 8.2.1.2.3 Decoupling Capacitor Recommendations
        3. 8.2.1.3 Application Curves
      2. 8.2.2 BTL Application With AD Modulation Filters - 1N
        1. 8.2.2.1 Design Requirements
      3. 8.2.3 SE Application
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Application Curves
      4. 8.2.4 PBTL Application With AD Modulation Filters
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Application Curves
      5. 8.2.5 Non-Differential PBTL Application
        1. 8.2.5.1 Design Requirements
    3. 8.3 System Example
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Detailed Description

Overview

The TAS5352A is a PWM input, Class-D audio amplifier. The output of the TAS5352A can be configured for single-ended, bridge-tied load (BTL), or parallel BTL (PBTL) output. The independent supply rails provide improved audio performance: one for audio power output (PVDD) and the other for gate drive and analog control (GVDD and VDD).

The TAS5352A contains a protection system that safeguards the device against short circuits, overload, overtemperature, and undervoltage conditions. An error reporting system provides feedback under fault conditions.

Figure 14 shows typical connections for BTL outputs. A detailed schematic can be viewed in TAS5352A EVM User's Guide (SLAU244).

Functional Block Diagram

TAS5352A b0034-03_les204.gif

Feature Description

System Power-Up and Power-Down Sequence

Powering Up

The TAS5352A does not require a power-up sequence. The outputs of the H-bridges remain in a high-impedance state until the gate-drive supply voltage (GVDD_X) and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics). Although not specifically required, TI recommends holding RESET_AB and RESET_CD in a low state while powering up the device. This allows an internal circuit to charge the external bootstrap capacitors by enabling a weak pulldown of the half-bridge output.

When the TAS5352A is being used with TI PWM modulators such as the TAS5518, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended.

Powering Down

The TAS5352A does not require a power-down sequence. The device remains fully operational as long as the gate-drive supply (GVDD_X) voltage and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics). Although not specifically required, it is a good practice to hold RESET_AB and RESET_CD low during power down, thus preventing audible artifacts including pops or clicks.

When the TAS5352A is being used with TI PWM modulators such as the TAS5518, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended.

Mid Z Sequence Compatibility

The TAS5352A is compatible with the Mid Z Sequence of the TAS5086 modulator. The Mid Z Sequence is a series of pulses that is generated by the modulator. This sequence causes the power stage to slowly enable its outputs as it begins to switch.

By slowly starting the PWM switching, the impulse response created by the onset of switching is reduced. This impulse response is the acoustic artifact that is heard in the output transducers (loudspeakers) and is commonly termed click or pop.

The low acoustic artifact noise of the TAS5352A will be further decreased when used in conjunction with the TAS5086 modulator with the Mid Z Sequence enabled.

The Mid Z Sequence is primarily used for the single-ended output configuration. It facilitates a softer PWM output start after the split cap output configuration is charged.

Error Reporting

The SD and OTW pins are both active-low, open-drain outputs. Their function is for protection-mode signaling to a PWM controller or other system-control device.

Any fault resulting in device shutdown is signaled by the SD pin going low. Likewise, OTW goes low when the device junction temperature exceeds 125°C (see Table 1).

Table 1. Error Reporting

SD OTW DESCRIPTION
0 0 Overtemperature (OTE) or overload (OLP) or undervoltage (UVP)
0 1 Overload (OLP) or undervoltage (UVP)
1 0 Junction temperature higher than 125°C (overtemperature warning)
1 1 Junction temperature lower than 125°C and no OLP or UVP faults (normal operation)

Note that asserting either RESET_AB or RESET_CD low forces the SD signal high, independent of faults being present. TI recommends monitoring the OTW signal using the system microcontroller and responding to an overtemperature warning signal by, for example, turning down the volume to prevent further heating of the device resulting in device shutdown (OTE).

To reduce external component count, an internal pullup resistor to 3.3 V is provided on both SD and OTW outputs. Level compliance for 5-V logic can be obtained by adding external pullup resistors to 5 V (see the Electrical Characteristics table for further specifications).

Device Protection System

The TAS5352A contains advanced protection circuitry carefully designed to facilitate system integration and ease of use, as well as to safeguard the device from permanent failure due to a wide range of fault conditions such as short circuits, overload, overtemperature, and undervoltage. The TAS5352A responds to a fault by immediately setting the power stage in a high-impedance (Hi-Z) state and asserting the SD pin low. In situations other than overload and overtemperature error (OTE), the device automatically recovers when the fault condition has been removed, that is, the supply voltage has increased.

The device will function on errors, as shown in Table 2.

Table 2. Device Protection

BTL MODE PBTL MODE SE MODE
LOCAL ERROR IN TURNS OFF LOCAL ERROR IN TURNS OFF LOCAL ERROR IN TURNS OFF
A A + B A A + B + C + D A A + B
B B B
C C + D C C C + D
D D D

Bootstrap UVP does not shutdown according to Table 2, it shuts down the respective half-bridge.

Use of TAS5352A in High-Modulation-Index Capable Systems

This device requires at least 30 ns of low time on the output per 384-kHz PWM frame rate to keep the bootstrap capacitors charged. As an example, if the modulation index is set to 99.2% in the TAS5508, this setting allows PWM pulse durations down to 10 ns. This signal, which does not meet the 30-ns requirement, is sent to the PWM_X pin and this low-state pulse time does not allow the bootstrap capacitor to stay charged. The TAS5352A device requires limiting the TAS5508 modulation index to 97.7% to keep the bootstrap capacitor charged under all signals and loads.

The TAS5352A contains a bootstrap capacitor undervoltage protection circuit (BST_UVP) that monitors the voltage on the bootstrap capacitors. When the voltage on the bootstrap capacitors is less than required for proper control of the high-side MOSFETs, the device initiates the bootstrap capacitor recharge sequences until the bootstrap capacitors are properly charged for robust operation. This function may be activated with PWM pulses less than 30 ns.

Therefore, TI strongly recommends using a TI PWM processor, such as TAS5518, TAS5086, or TAS5508, with the modulation index set at 97.7% to interface with TAS5352A.

Overcurrent (OC) Protection With Current Limiting and Overload Detection

The device has independent, fast-reacting current detectors with programmable trip threshold (OC threshold) on all high-side and low-side power-stage FETs. See Table 3 for OC-adjust resistor values. The detector outputs are closely monitored by two protection systems. The first protection system controls the power stage to prevent the output current from further increasing, that is, it performs a current-limiting function rather than prematurely shutting down during combinations of high-level music transients and extreme speaker load impedance drops. If the high-current situation persists, that is, the power stage is being overloaded, a second protection system triggers a latching shutdown, resulting in the power stage being set in the high-impedance (Hi-Z) state. Current limiting and overload protection are independent for half-bridges A and B and, respectively, C and D. That is, if the bridge-tied load between half-bridges A and B causes an overload fault, only half-bridges A and B are shut down.

  • For the lowest-cost bill of materials in terms of component selection, the OC threshold measure should be limited, considering the power output requirement and minimum load impedance. Higher-impedance loads require a lower OC threshold.
  • The demodulation-filter inductor must retain at least 5 μH of inductance at twice the OC threshold setting.

Unfortunately, most inductors have decreasing inductance with increasing temperature and increasing current (saturation). To some degree, an increase in temperature naturally occurs when operating at high output currents, due to core losses and the DC resistance of the copper winding of the inductor. A thorough analysis of inductor saturation and thermal properties is strongly recommended.

Setting the OC threshold too low might cause issues such as lack of enough output power or unexpected shutdowns due to too-sensitive overload detection.

In general, TI recommends following the external component selection and PCB layout in the Detailed Design Procedure closely.

For added flexibility, the OC threshold is programmable within a limited range using a single external resistor connected between the OC_ADJ pin and AGND. See the Electrical Characteristics table for information on the correlation between programming-resistor value and the OC threshold.

NOTE

A properly functioning overcurrent detector assumes the presence of a properly designed demodulation filter at the power-stage output. It is required to follow the guidelines in Table 3 when selecting the OC threshold and an appropriate demodulation inductor.

Table 3. Overcurrent Resistor Selection

OC-ADJUST RESISTOR VALUES (kΩ) MAX CURRENT BEFORE OC OCCURS (A), TC = 75°C
22 10.9
33 9.1
47 7.1

The reported maximum peak current in the table above is measured with continuous current in 1 Ω, one channel active and the other one muted.

Pin-to-Pin Short-Circuit Protection (PPSC)

The PPSC detection system protects the device from permanent damage in the case that a power output pin (OUT_X) is shorted to GND_X or PVDD_X. For comparison the OC protection system detects an over current after the demodulation filter where PPSC detects shorts directly at the pin before the filter. PPSC detection is performed at start-up, that is, when VDD is supplied, consequently a short to either GND_X or PVDD_X after system start-up does not activate the PPSC detection system. When PPSC detection is activated by a short on the output, all half-bridges are kept in a Hi-Z state until the short is removed, the device then continues the start-up sequence and starts switching. The detection is controlled globally by a two-step sequence. The first step ensures that there are no shorts from OUT_X to GND_X, the second step tests that there are no shorts from OUT_X to PVDD_X. The total duration of this process is roughly proportional to the capacitance of the output LC filter. The typical duration is < 15 ms/μF. While the PPSC detection is in progress, SD is kept low and the device does not react to changes applied to the RESET pins. If no shorts are present the PPSC detection passes, and SD is released. A device reset will not start a new PPSC detection. PPSC detection is enabled in BTL and PBTL output configurations, the detection is not performed in SE mode. To make sure not to trip the PPSC detection system, TI recommends not to insert any resistive load to GND_X or PVDD_X.

Overtemperature Protection

The TAS5352A has a two-level temperature-protection system that asserts an active-low warning signal (OTW) when the device junction temperature exceeds 125°C (typical) and, if the device junction temperature exceeds 155°C (typical), the device is put into thermal shutdown, resulting in all half-bridge outputs being set in the high-impedance (Hi-Z) state and SD being asserted low. OTE is latched in this case. To clear the OTE latch, either RESET_AB or RESET_CD must be asserted. Thereafter, the device resumes normal operation.

Undervoltage Protection (UVP) and Power-On-Reset (POR)

The UVP and POR circuits of the TAS5352A fully protect the device in any power up, power down, or brownout situations. While powering up, the POR circuit resets the overload circuit (OLP) and ensures that all circuits are fully operational when the GVDD_X and VDD supply voltages reach stated in the Electrical Characteristics. Although GVDD_X and VDD are independently monitored, a supply voltage drop below the UVP threshold on any VDD or GVDD_X pin results in all half-bridge outputs immediately being set in the high-impedance (Hi-Z) state and SD being asserted low. The device automatically resumes operation when all supply voltages have increased above the UVP threshold.

Device Reset

Two reset pins are provided for independent control of half-­bridges A/B and C/D. When RESET_AB is asserted low, all four power-stage FETs in half-bridges A and B are forced into a high-impedance (Hi-Z) state. Likewise, asserting RESET_CD low forces all four power-stage FETs in half-bridges C and D into a high-impedance state. Thus, both reset pins are well suited for hard-muting the power stage, if needed.

In BTL modes, to accommodate bootstrap charging prior to switching start, asserting the reset inputs low enables weak pulldown of the half-bridge outputs. In the SE mode, the weak pulldowns are not enabled. Therefore, TI recommends ensuring bootstrap capacitor charging by providing a low pulse on the PWM inputs when reset is asserted high.

Asserting either reset input low removes any fault information to be signaled on the SD output, that is, SD is forced high.

A rising-edge transition on either reset input allows the device to resume operation after an overload fault. To ensure thermal reliability, the rising edge of reset must occur no sooner than 4 ms after the falling edge of SD.

Device Functional Modes

Protection MODE Selection Pins

Protection modes are selected by shorting M1, M2, and M3 to VREG or GND.

Table 4. Protection Mode Selection Pins

MODE PINS MODE NAME PWM INPUT(1) DESCRIPTION
M3 M2 M1
0 0 0 BTL mode 1 2N All protection systems enabled
0 0 1 BTL mode 2 2N Latching shutdown on, PWM activity detector and OLP disabled
0 1 0 BTL mode 3 1N All protection systems enabled
0 1 1 PBTL mode 1N / 2N (2) All protection systems enabled
1 0 0 SE mode 1 1N All protection systems enabled(3)
1 0 1 SE mode 2 1N Latching shutdown on, PWM activity detector and OLP disabled(3)
1 1 0 Reserved
1 1 1
The 1N and 2N naming convention is used to indicate the number of PWM lines to the power stage per channel in a specific mode.
PWM_D is used to select between the 1N and 2N interface in PBTL mode (Low = 1N; High = 2N). PWM_D is internally pulled low in PBTL mode. PWM_A is used as the PWM input in 1N mode and PWM_A and PWM_B are used as inputs for the 2N mode.
PPSC detection system disabled.