SCPS264B March   2017  – February 2020 TCA9800

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Simplified Schematic
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Switching Characteristics
    8. 7.8 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Integrated Current Source
      2. 9.3.2 Ultra-Low Power Consumption
      3. 9.3.3 No Static-Voltage Offset
      4. 9.3.4 Active-High Repeater Enable Input
      5. 9.3.5 Powered Off High Impedance I2C Bus Pins on A-Side
      6. 9.3.6 Powered-Off Back-Power Protection for I2C Bus Pins
      7. 9.3.7 Clock Stretching and Multiple Master Arbitration Support
    4. 9.4 Device Functional Modes
      1. 9.4.1 Device Operation Considerations
        1. 9.4.1.1 B-Side Input Low (VIL/IILC/RILC)
          1. 9.4.1.1.1 VILC & IILC
          2. 9.4.1.1.2 RILC
        2. 9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)
          1. 9.4.1.2.1 IEXT-I
          2. 9.4.1.2.2 IEXT-O
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Device Selection Guide
      2. 10.1.2 Special Considerations for the B-side
        1. 10.1.2.1 FET or Pass-Gate Translators
        2. 10.1.2.2 Buffered Translators/Level-shifters
    2. 10.2 Typical Application
      1. 10.2.1 Single Device
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curves
      2. 10.2.2 Buffering Without Level-Shifting
        1. 10.2.2.1 Design Requirements
        2. 10.2.2.2 Detailed Design Procedure
        3. 10.2.2.3 Application Curve
      3. 10.2.3 Parallel Device Use Case
        1. 10.2.3.1 Design Requirements
        2. 10.2.3.2 Detailed Design Procedure
        3. 10.2.3.3 Application Curves
      4. 10.2.4 Series Device Use Case
        1. 10.2.4.1 Design Requirements
        2. 10.2.4.2 Detailed Design Procedure
        3. 10.2.4.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4.1.2 Input and Output Leakage Current (IEXT-I/IEXT-O)

The Input external current (IEXT-I) and output external current (IEXT-O) parameters describe the amount of parasitic current either injected into the device or pulled from the device (such as leakage from ESD cells) without affecting device operation as shown in Table 4.

Table 4. B-Side Input and Output Leakage Current

PARAMETER SHORT DESCRIPTION DETAILED INFORMATION
IEXT-I Input leakage current Current that is external, but pulled up to supply, leaking current into the TCA980x B-side. An example is a leaky ESD cell from VCC, or an external pull-up resistor. See the IEXT-I section
IEXT-O Output leakage current Current that is pulled from the TCA980x B-side. ESD cells are the most common form of output leakage. Care must be taken not to violate this spec, otherwise the leakage current can create a false low. See the IEXT-O section