SLVSAG6D September   2010  – July 2019 TLV702

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Typical Application Circuit
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Shutdown
      3. 7.3.3 Dropout Voltage
      4. 7.3.4 Undervoltage Lockout
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitor Requirements
        2. 8.2.2.2 Transient Response
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
    1. 9.1 Power Dissipation
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Thermal Consideration
      2. 10.1.2 Package Mounting
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Spice Models
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.3 Dropout Voltage

The TLV702 uses a PMOS pass transistor to achieve low dropout. When (VIN – VOUT) is less than the dropout voltage (VDO), the PMOS pass device is in the linear (triode) region of operation and the input-to-output resistance is the RDS(on) of the PMOS pass element. VDO scales approximately with output current because the PMOS device behaves as a resistor in dropout.

As with any linear regulator, PSRR and transient response are degraded as (VIN – VOUT) approaches dropout. This effect is shown in Figure 13.