SLVSGU2E February 2023 – April 2024 TLV709
PRODUCTION DATA
This device has a built-in leakage-null control circuit. At high temperatures, pass-transistor leakage increases and starts impacting the VOUT accuracy at no-load (IOUT = 0mA) conditions. This leakage becomes more aggravated with higher headroom across the LDO (VIN – VOUT). The TLV709 has a built-in leakage-null control circuit that detects pass-transistor leakage and provides a ground discharge path for the leakage. This circuitry helps the TLV709 maintain much tighter VOUT accuracy across wide VIN and temperature (–40°C to +125°C) ranges.