SBVS176B October   2011  – April 2016 TLV717P

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Internal Current Limit
      2. 7.3.2 Shutdown
      3. 7.3.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input and Output Capacitor Requirements
        2. 8.2.2.2 Dropout Voltage
        3. 8.2.2.3 Transient Response
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Evaluation Modules
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Specifications

Absolute Maximum Ratings

At TJ = 25°C, unless otherwise noted. All voltages are with respect to GND.(1)
MIN MAX UNIT
Voltage Input range, VIN –0.3 6 V
Enable range, VEN –0.3 VIN + 0.3
Output range, VOUT –0.3 6
Current Maximum output, IOUT Internally limited
Output short-circuit duration Indefinite
Continuous total power dissipation, PDISS See Thermal Information
Temperature Junction, TJ –55 150 °C
Storage junction, Tstg –55 150
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 1.7 5.5 V
VOUT Output voltage 1.2 5 V
IOUT Output current 0 150 mA
VEN Enable pin voltage 0 VIN V
TJ Junction temperature –40 85 °C

Thermal Information

THERMAL METRIC TLV717P UNIT
DQN (X2SON)
4 PINS
RθJA Junction-to-ambient thermal resistance 393.3 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 140.3 °C/W
RθJB Junction-to-board thermal resistance 330 °C/W
ψJT Junction-to-top characterization parameter 6.5 °C/W
ψJB Junction-to-board characterization parameter 329 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance 147.5 °C/W

Electrical Characteristics

At operating temperature range (TJ = –40°C to 85°C), TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.7 V (whichever is greater), IOUT = 10 mA, VEN = VIN, and COUT = 1 µF, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range 1.7 5.5 V
VOUT Output voltage range 1.2 5 V
IOUT Output current 150 mA
DC output accuracy TJ = +25°C 0.5%
VOUT ≥ 1.2 V, –40°C ≤ TJ ≤ +85°C –1.5% 1.5%
VOUT ≤ 1.2 V 25 mV
ΔVO/VIN Line regulation VOUT(NOM) + 0.5 V ≤ VIN ≤ 5.5 V 1 5 mV
ΔVO/IOUT Load regulation 0 mA ≤ IOUT ≤ 150 mA 10 20 mV
VDO Dropout voltage VIN = 0.98 × VOUT(NOM), IOUT = 150 mA 1.2 V ≤ VOUT < 1.5 V 330 500 mV
1.5 V ≤ VOUT < 1.8 V 330 450
1.8 V ≤ VOUT ≤ 5 V 215 350
IGND Ground pin current IOUT = 0 mA 35 55 µA
ISHDN Shutdown current VEN ≤ 0.4 V, 2 V ≤ VIN ≤ 4.5 V 0.1 0.5 µA
PSRR Power-supply rejection ratio VIN = 3.3 V, VOUT = 2.8 V, IOUT = 30 mA f = 10 Hz 70 dB
f = 100 Hz 70
f = 1 kHz 65
f = 10 kHz 60
f = 100 kHz 43
VNOISE Output noise voltage BW = 100 Hz to 100 kHz, VIN = 2.3 V, VOUT = 1.8 V, IOUT = 10 mA 55 µVRMS
tSTR Start-up time COUT = 1 μF, IOUT = 150 mA 100 µs
ISC Short current limit VIN = min (VOUT(NOM) + 1 V, 5.5 V), VOUT = 0 V 40 mA
VHI Enable high (enabled) 0.9 VIN V
VLO Enable low (disabled) 0 0.4 V
IEN EN pin current EN = 5.5 V 0.01 µA
RPULLDOWN Pulldown resistor 120 Ω
UVLO Undervoltage lockout VIN rising 1.6 V

Typical Characteristics

At operating temperature range (TJ = –40°C to 85°C), TJ = 25°C, VIN = VOUT(NOM) + 0.5 V or 1.7 V (whichever is greater), IOUT = 10 mA, VEN = VIN, and COUT = 1 µF, unless otherwise noted.
TLV717P G001_BVS176.gif
Figure 1. Load Regulation
TLV717P G003_BVS176.gif
Figure 3. Line Regulation
TLV717P G005_BVS176.gif
Figure 5. Dropout Voltage vs Output Current
TLV717P G007_BVS176.gif
Figure 7. Ground Pin Current vs Input Voltage
TLV717P G009_BVS176.gif
Figure 9. Ground Pin Current vs Temperature
TLV717P G011_BVS176.gif
Figure 11. TLV71728PSRR vs Frequency
TLV717P G013_BVS176.gif
Figure 13. PSRR vs Input Voltage
TLV717P G002_BVS176.gif
Figure 2. Line Regulation
TLV717P G004_BVS176.gif
Figure 4. Dropout Voltage vs Fixed Output Voltage Versions
TLV717P G006_BVS176.gif
Figure 6. Output Voltage vs Temperature
TLV717P G008_BVS176.gif
Figure 8. Ground Pin Current vs Output Current
TLV717P G010_BVS176.gif
Figure 10. Output Voltage vs Output Current
TLV717P G012_BVS176.gif
Figure 12. TLV71728PSRR vs Frequency
TLV717P G014_BVS176.gif
Figure 14. Output Spectral Noise Density vs Frequency