SLVSBO7L December 2012 – January 2017 TPD1E05U06 , TPD4E05U06 , TPD6E05U06
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical fast transient | IEC 61000-4-4 (5/50 ns) | 80 | A | |
Peak pulse | IEC 61000-4-5 Current (tp – 8/20 µs)(4) | 2.5 | A | |
IEC 61000-4-5 Power (tp – 8/20 µs)(4) | 40 | W | ||
TA | Operating temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 155 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V | |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | IEC 61000-4-2 contact discharge | ±12000 | V |
IEC 61000-4-2 air-gap discharge | ±15000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | 0 | 5.5 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD1E05U06 | TPD4E05U06 | TPD6E05U06 | UNIT | |
---|---|---|---|---|---|
DPY (X1SON) | DQA (USON) | RVZ (USON) | |||
2 PINS | 10 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 697.3 | 327 | 197.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 471 | 189.5 | 119.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 575.9 | 257.7 | 92.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 175.7 | 60.9 | 22 | °C/W |
ψJB | Junction-to-board characterization parameter | 575.1 | 257 | 91.6 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VRWM | Reverse stand-off voltage | IIO < 10 µA | 5.5 | V | |||
VBR | Break-down voltage | IIO = 1 mA | 6.5 | 8.5 | V | ||
Vclamp | Clamp voltage | I = 1 A, TLP, I/O to ground(1) | 10 | V | |||
I = 5 A, TLP, I/O to ground(1) | 14 | ||||||
I = 1 A, TLP, ground to I/O(1) | 3 | ||||||
I = 5 A, TLP, ground to I/O(1) | 7 | ||||||
ILEAK | Leakage current | VIO = 2.5 V | 0.01 | 10 | nA | ||
RDYN | DPY package dynamic resistance | I/O to GND(2) | 0.8 | Ω | |||
GND to I/O(2) | 0.8 | ||||||
DQA package dynamic resistance | I/O to GND(2) | 0.8 | Ω | ||||
GND to I/O(2) | 0.8 | ||||||
RVZ package dynamic resistance | I/O to GND(2) | 0.8 | Ω | ||||
GND to I/O(2) | 0.8 | ||||||
Capacitance | |||||||
CL | Line capacitance(3) | VIO = 2.5 V, f = 1 MHz, I/O to GND |
TPD1E05U06 DPY package | 0.42 | pF | ||
TPD4E05U06 DQA package | 0.5 | ||||||
TPD6E05U06 RVZ package | 0.47 | ||||||
ΔCIO-TO-GND | Variation of channel input capacitance | GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V, channel_x pin to GND – channel_y pin to GND | 0.05 | 0.07 | pF | ||
CCROSS | Channel to channel input capacitance | GND Pin = 0 V, F = 1 GHz, VBIAS = 2.5 V, between channel pins | 0.01 | 0.06 | pF |